JP2022506677A5 - - Google Patents

Info

Publication number
JP2022506677A5
JP2022506677A5 JP2021524215A JP2021524215A JP2022506677A5 JP 2022506677 A5 JP2022506677 A5 JP 2022506677A5 JP 2021524215 A JP2021524215 A JP 2021524215A JP 2021524215 A JP2021524215 A JP 2021524215A JP 2022506677 A5 JP2022506677 A5 JP 2022506677A5
Authority
JP
Japan
Prior art keywords
substrate
approximately
precursor
exposing
supply amount
Prior art date
Application number
JP2021524215A
Other languages
English (en)
Japanese (ja)
Other versions
JP7503547B2 (ja
JPWO2020101806A5 (https=
JP2022506677A (ja
Filing date
Publication date
Priority claimed from US16/189,429 external-priority patent/US10586707B2/en
Application filed filed Critical
Priority claimed from PCT/US2019/052967 external-priority patent/WO2020101806A1/en
Publication of JP2022506677A publication Critical patent/JP2022506677A/ja
Publication of JP2022506677A5 publication Critical patent/JP2022506677A5/ja
Publication of JPWO2020101806A5 publication Critical patent/JPWO2020101806A5/ja
Application granted granted Critical
Publication of JP7503547B2 publication Critical patent/JP7503547B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2021524215A 2018-11-13 2019-09-25 金属シリサイドの選択的堆積及び酸化物の選択的除去 Active JP7503547B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/189,429 US10586707B2 (en) 2017-05-26 2018-11-13 Selective deposition of metal silicides
US16/189,429 2018-11-13
PCT/US2019/052967 WO2020101806A1 (en) 2018-11-13 2019-09-25 Selective deposition of metal silicides and selective oxide removal

Publications (4)

Publication Number Publication Date
JP2022506677A JP2022506677A (ja) 2022-01-17
JP2022506677A5 true JP2022506677A5 (https=) 2022-10-03
JPWO2020101806A5 JPWO2020101806A5 (https=) 2022-10-03
JP7503547B2 JP7503547B2 (ja) 2024-06-20

Family

ID=70731667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021524215A Active JP7503547B2 (ja) 2018-11-13 2019-09-25 金属シリサイドの選択的堆積及び酸化物の選択的除去

Country Status (6)

Country Link
EP (1) EP3881349A4 (https=)
JP (1) JP7503547B2 (https=)
KR (1) KR102843234B1 (https=)
CN (1) CN113348532A (https=)
TW (1) TWI833831B (https=)
WO (1) WO2020101806A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115739190B (zh) * 2022-11-14 2024-02-13 江南大学 一种植酸金属络合物催化剂及其制备方法与应用

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61128521A (ja) * 1984-11-27 1986-06-16 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPH07283168A (ja) * 1994-04-15 1995-10-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100319888B1 (ko) * 1998-06-16 2002-01-10 윤종용 선택적 금속층 형성방법, 이를 이용한 커패시터 형성 및 콘택홀 매립방법
US9051641B2 (en) * 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US20040102033A1 (en) * 2002-11-21 2004-05-27 Texas Instruments, Incorporated Method for forming a ternary diffusion barrier layer
US7780793B2 (en) 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
TW200734482A (en) * 2005-03-18 2007-09-16 Applied Materials Inc Electroless deposition process on a contact containing silicon or silicide
US20070099806A1 (en) * 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
TW200746268A (en) 2006-04-11 2007-12-16 Applied Materials Inc Process for forming cobalt-containing materials
US8455352B1 (en) * 2012-05-24 2013-06-04 Applied Materials, Inc. Method for removing native oxide and associated residue from a substrate
JP6336866B2 (ja) * 2013-10-23 2018-06-06 株式会社日立国際電気 半導体デバイスの製造方法、基板処理装置およびプログラム
US9875907B2 (en) * 2015-11-20 2018-01-23 Applied Materials, Inc. Self-aligned shielding of silicon oxide
TWI716511B (zh) * 2015-12-19 2021-01-21 美商應用材料股份有限公司 用於鎢原子層沉積製程作為成核層之正形非晶矽
US10468263B2 (en) * 2015-12-19 2019-11-05 Applied Materials, Inc. Tungsten deposition without barrier layer
US9981286B2 (en) * 2016-03-08 2018-05-29 Asm Ip Holding B.V. Selective formation of metal silicides
US9803277B1 (en) * 2016-06-08 2017-10-31 Asm Ip Holding B.V. Reaction chamber passivation and selective deposition of metallic films
US9805974B1 (en) * 2016-06-08 2017-10-31 Asm Ip Holding B.V. Selective deposition of metallic films

Similar Documents

Publication Publication Date Title
TWI641046B (zh) 積體電路的製造方法
JP5202372B2 (ja) 成膜装置のメタル汚染低減方法、半導体装置の製造方法、記憶媒体及び成膜装置
JP4959733B2 (ja) 薄膜形成方法、薄膜形成装置及びプログラム
TWI689011B (zh) 半導體裝置之製造方法、基板處理裝置及記錄媒體
TW201118947A (en) Film formation method and apparatus
JP4918452B2 (ja) 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム
TWI784399B (zh) 半導體裝置之製造方法、基板處理裝置、程式及基板處理方法
WO2007020874A1 (ja) 薄膜形成方法および半導体デバイスの製造方法
JP2009144242A5 (ja) タングステン膜の製造方法および装置
TW200933730A (en) Method of manufacturing semiconductor device and substrate processing apparatus
TW201635874A (zh) 用於積體電路製造之方法
JP2004343094A5 (https=)
JP2022506677A5 (https=)
TW201546313A (zh) 含碳之矽膜之形成方法及形成裝置
KR20150112820A (ko) 아몰퍼스 실리콘막 형성 장치의 세정 방법, 아몰퍼스 실리콘막의 형성 방법 및 아몰퍼스 실리콘막 형성 장치
JP2004526327A5 (https=)
JP5341358B2 (ja) 半導体装置の製造方法及び基板処理装置及び基板処理方法
KR101906653B1 (ko) 실리콘 산화막의 형성 방법 및 실리콘 산화막의 형성 장치
JP5710033B2 (ja) 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム
JP2011526077A5 (https=)
JPWO2020101806A5 (https=)
JP5571233B2 (ja) 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
JP2012209585A (ja) 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム
JP2001068468A (ja) 成膜方法
CN115483097B (zh) 基板处理方法和基板处理装置