JP2004526327A5 - - Google Patents

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Publication number
JP2004526327A5
JP2004526327A5 JP2002586391A JP2002586391A JP2004526327A5 JP 2004526327 A5 JP2004526327 A5 JP 2004526327A5 JP 2002586391 A JP2002586391 A JP 2002586391A JP 2002586391 A JP2002586391 A JP 2002586391A JP 2004526327 A5 JP2004526327 A5 JP 2004526327A5
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JP
Japan
Prior art keywords
temperature
treatment step
heat
metal
metallized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002586391A
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English (en)
Japanese (ja)
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JP2004526327A (ja
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Publication date
Priority claimed from DE10120523A external-priority patent/DE10120523A1/de
Application filed filed Critical
Publication of JP2004526327A publication Critical patent/JP2004526327A/ja
Publication of JP2004526327A5 publication Critical patent/JP2004526327A5/ja
Pending legal-status Critical Current

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JP2002586391A 2001-04-26 2002-04-10 タングステン−シリコンゲートの選択的側壁酸化中における酸化タングステンの蒸着を最小化するための方法 Pending JP2004526327A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10120523A DE10120523A1 (de) 2001-04-26 2001-04-26 Verfahren zur Minimierung der Wolframoxidausdampfung bei der selektiven Seitenwandoxidation von Wolfram-Silizium-Gates
PCT/DE2002/001321 WO2002089190A2 (de) 2001-04-26 2002-04-10 Verfahren zur minimierung der wolframoxidausdampfung bei der selektiven seitenwandoxidation von wolfram-silizium-gates

Publications (2)

Publication Number Publication Date
JP2004526327A JP2004526327A (ja) 2004-08-26
JP2004526327A5 true JP2004526327A5 (https=) 2007-06-28

Family

ID=7682847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002586391A Pending JP2004526327A (ja) 2001-04-26 2002-04-10 タングステン−シリコンゲートの選択的側壁酸化中における酸化タングステンの蒸着を最小化するための方法

Country Status (8)

Country Link
US (1) US7094637B2 (https=)
EP (1) EP1382062B1 (https=)
JP (1) JP2004526327A (https=)
KR (1) KR20040015149A (https=)
CN (1) CN1503987A (https=)
DE (2) DE10120523A1 (https=)
TW (1) TW550711B (https=)
WO (1) WO2002089190A2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7020729B2 (en) * 2002-05-16 2006-03-28 Intel Corporation Protocol independent data transmission interface
DE10236896B4 (de) * 2002-08-12 2010-08-12 Mattson Thermal Products Gmbh Vorrichtung und Verfahren zum thermischen Behandeln von Halbleiterwafern
US6774012B1 (en) * 2002-11-08 2004-08-10 Cypress Semiconductor Corp. Furnace system and method for selectively oxidizing a sidewall surface of a gate conductor by oxidizing a silicon sidewall in lieu of a refractory metal sidewall
US7235497B2 (en) * 2003-10-17 2007-06-26 Micron Technology, Inc. Selective oxidation methods and transistor fabrication methods
KR100580118B1 (ko) * 2005-03-09 2006-05-12 주식회사 하이닉스반도체 반도체 소자의 게이트 전극 패턴 형성방법
JP2007123669A (ja) * 2005-10-31 2007-05-17 Elpida Memory Inc 半導体装置の製造方法
KR100650858B1 (ko) * 2005-12-23 2006-11-28 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조 방법
US7951728B2 (en) * 2007-09-24 2011-05-31 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes
US8278287B2 (en) * 2008-04-15 2012-10-02 Quark Pharmaceuticals Inc. siRNA compounds for inhibiting NRF2
WO2010026624A1 (ja) * 2008-09-02 2010-03-11 株式会社 東芝 不揮発性半導体記憶装置の製造方法
US8889565B2 (en) * 2009-02-13 2014-11-18 Asm International N.V. Selective removal of oxygen from metal-containing materials
US11456177B2 (en) * 2020-09-22 2022-09-27 Nanya Technology Corporation Method of manufacturing semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132136A (ja) * 1983-01-19 1984-07-30 Hitachi Ltd 半導体装置の製造方法
JPH10223900A (ja) * 1996-12-03 1998-08-21 Toshiba Corp 半導体装置及び半導体装置の製造方法
US5796151A (en) 1996-12-19 1998-08-18 Texas Instruments Incorporated Semiconductor stack having a dielectric sidewall for prevention of oxidation of tungsten in tungsten capped poly-silicon gate electrodes
JP4283904B2 (ja) * 1997-07-11 2009-06-24 株式会社東芝 半導体装置の製造方法
JP2000156497A (ja) * 1998-11-20 2000-06-06 Toshiba Corp 半導体装置の製造方法
US6346467B1 (en) 1999-09-02 2002-02-12 Advanced Micro Devices, Inc. Method of making tungsten gate MOS transistor and memory cell by encapsulating

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