DE10120523A1 - Verfahren zur Minimierung der Wolframoxidausdampfung bei der selektiven Seitenwandoxidation von Wolfram-Silizium-Gates - Google Patents

Verfahren zur Minimierung der Wolframoxidausdampfung bei der selektiven Seitenwandoxidation von Wolfram-Silizium-Gates

Info

Publication number
DE10120523A1
DE10120523A1 DE10120523A DE10120523A DE10120523A1 DE 10120523 A1 DE10120523 A1 DE 10120523A1 DE 10120523 A DE10120523 A DE 10120523A DE 10120523 A DE10120523 A DE 10120523A DE 10120523 A1 DE10120523 A1 DE 10120523A1
Authority
DE
Germany
Prior art keywords
temperature
hydrogen
treatment step
tungsten
metallization structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE10120523A
Other languages
German (de)
English (en)
Inventor
Regina Hayn
Jens-Uwe Sachse
Erwin Schoer
Wilhelm Kegel
Olaf Storbeck
Michael Stadtmueller
Georg Roters
Steffen Frigge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Mattson Thermal Products GmbH
Original Assignee
Infineon Technologies AG
Mattson Thermal Products GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG, Mattson Thermal Products GmbH filed Critical Infineon Technologies AG
Priority to DE10120523A priority Critical patent/DE10120523A1/de
Priority to KR10-2003-7013953A priority patent/KR20040015149A/ko
Priority to CNA028087208A priority patent/CN1503987A/zh
Priority to DE50211205T priority patent/DE50211205D1/de
Priority to JP2002586391A priority patent/JP2004526327A/ja
Priority to PCT/DE2002/001321 priority patent/WO2002089190A2/de
Priority to EP02766602A priority patent/EP1382062B1/de
Priority to TW091108106A priority patent/TW550711B/zh
Publication of DE10120523A1 publication Critical patent/DE10120523A1/de
Priority to US10/694,593 priority patent/US7094637B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/01312—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional layer comprising a metal or metal silicide formed by deposition, i.e. without a silicidation reaction, e.g. sputter deposition

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE10120523A 2001-04-26 2001-04-26 Verfahren zur Minimierung der Wolframoxidausdampfung bei der selektiven Seitenwandoxidation von Wolfram-Silizium-Gates Ceased DE10120523A1 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE10120523A DE10120523A1 (de) 2001-04-26 2001-04-26 Verfahren zur Minimierung der Wolframoxidausdampfung bei der selektiven Seitenwandoxidation von Wolfram-Silizium-Gates
KR10-2003-7013953A KR20040015149A (ko) 2001-04-26 2002-04-10 텅스텐-규소 게이트의 선택적 측벽 산화 도중 텅스텐옥사이드의 증발을 최소화시키는 방법
CNA028087208A CN1503987A (zh) 2001-04-26 2002-04-10 钨硅闸极选择性侧壁氧化期间最小化氧化钨蒸气沉积之方法
DE50211205T DE50211205D1 (de) 2001-04-26 2002-04-10 Verfahren zur minimierung der wolframoxidabscheidung bei der selektiven seitenwandoxidation von wolfram-silizium-gates
JP2002586391A JP2004526327A (ja) 2001-04-26 2002-04-10 タングステン−シリコンゲートの選択的側壁酸化中における酸化タングステンの蒸着を最小化するための方法
PCT/DE2002/001321 WO2002089190A2 (de) 2001-04-26 2002-04-10 Verfahren zur minimierung der wolframoxidausdampfung bei der selektiven seitenwandoxidation von wolfram-silizium-gates
EP02766602A EP1382062B1 (de) 2001-04-26 2002-04-10 Verfahren zur minimierung der wolframoxidabscheidung bei der selektiven seitenwandoxidation von wolfram-silizium-gates
TW091108106A TW550711B (en) 2001-04-26 2002-04-19 Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates
US10/694,593 US7094637B2 (en) 2001-04-26 2003-10-27 Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10120523A DE10120523A1 (de) 2001-04-26 2001-04-26 Verfahren zur Minimierung der Wolframoxidausdampfung bei der selektiven Seitenwandoxidation von Wolfram-Silizium-Gates

Publications (1)

Publication Number Publication Date
DE10120523A1 true DE10120523A1 (de) 2002-10-31

Family

ID=7682847

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10120523A Ceased DE10120523A1 (de) 2001-04-26 2001-04-26 Verfahren zur Minimierung der Wolframoxidausdampfung bei der selektiven Seitenwandoxidation von Wolfram-Silizium-Gates
DE50211205T Expired - Lifetime DE50211205D1 (de) 2001-04-26 2002-04-10 Verfahren zur minimierung der wolframoxidabscheidung bei der selektiven seitenwandoxidation von wolfram-silizium-gates

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE50211205T Expired - Lifetime DE50211205D1 (de) 2001-04-26 2002-04-10 Verfahren zur minimierung der wolframoxidabscheidung bei der selektiven seitenwandoxidation von wolfram-silizium-gates

Country Status (8)

Country Link
US (1) US7094637B2 (https=)
EP (1) EP1382062B1 (https=)
JP (1) JP2004526327A (https=)
KR (1) KR20040015149A (https=)
CN (1) CN1503987A (https=)
DE (2) DE10120523A1 (https=)
TW (1) TW550711B (https=)
WO (1) WO2002089190A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10236896A1 (de) * 2002-08-12 2004-04-01 Infineon Technologies Ag Vorrichtung und Verfahren zum thermischen Behandeln von Halbleiterwafern

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7020729B2 (en) * 2002-05-16 2006-03-28 Intel Corporation Protocol independent data transmission interface
US6774012B1 (en) * 2002-11-08 2004-08-10 Cypress Semiconductor Corp. Furnace system and method for selectively oxidizing a sidewall surface of a gate conductor by oxidizing a silicon sidewall in lieu of a refractory metal sidewall
US7235497B2 (en) * 2003-10-17 2007-06-26 Micron Technology, Inc. Selective oxidation methods and transistor fabrication methods
KR100580118B1 (ko) * 2005-03-09 2006-05-12 주식회사 하이닉스반도체 반도체 소자의 게이트 전극 패턴 형성방법
JP2007123669A (ja) * 2005-10-31 2007-05-17 Elpida Memory Inc 半導体装置の製造方法
KR100650858B1 (ko) * 2005-12-23 2006-11-28 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조 방법
US7951728B2 (en) * 2007-09-24 2011-05-31 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes
US8278287B2 (en) * 2008-04-15 2012-10-02 Quark Pharmaceuticals Inc. siRNA compounds for inhibiting NRF2
WO2010026624A1 (ja) * 2008-09-02 2010-03-11 株式会社 東芝 不揮発性半導体記憶装置の製造方法
US8889565B2 (en) * 2009-02-13 2014-11-18 Asm International N.V. Selective removal of oxygen from metal-containing materials
US11456177B2 (en) * 2020-09-22 2022-09-27 Nanya Technology Corporation Method of manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0116317A2 (en) * 1983-01-19 1984-08-22 Hitachi, Ltd. Method for producing a semiconductor device comprising an oxidation step

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10223900A (ja) * 1996-12-03 1998-08-21 Toshiba Corp 半導体装置及び半導体装置の製造方法
US5796151A (en) 1996-12-19 1998-08-18 Texas Instruments Incorporated Semiconductor stack having a dielectric sidewall for prevention of oxidation of tungsten in tungsten capped poly-silicon gate electrodes
JP4283904B2 (ja) * 1997-07-11 2009-06-24 株式会社東芝 半導体装置の製造方法
JP2000156497A (ja) * 1998-11-20 2000-06-06 Toshiba Corp 半導体装置の製造方法
US6346467B1 (en) 1999-09-02 2002-02-12 Advanced Micro Devices, Inc. Method of making tungsten gate MOS transistor and memory cell by encapsulating

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0116317A2 (en) * 1983-01-19 1984-08-22 Hitachi, Ltd. Method for producing a semiconductor device comprising an oxidation step

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10236896A1 (de) * 2002-08-12 2004-04-01 Infineon Technologies Ag Vorrichtung und Verfahren zum thermischen Behandeln von Halbleiterwafern
US7151060B2 (en) 2002-08-12 2006-12-19 Mattson Thermal Products Gmbh Device and method for thermally treating semiconductor wafers
DE10236896B4 (de) * 2002-08-12 2010-08-12 Mattson Thermal Products Gmbh Vorrichtung und Verfahren zum thermischen Behandeln von Halbleiterwafern

Also Published As

Publication number Publication date
WO2002089190A3 (de) 2003-01-09
EP1382062B1 (de) 2007-11-14
EP1382062A2 (de) 2004-01-21
TW550711B (en) 2003-09-01
KR20040015149A (ko) 2004-02-18
CN1503987A (zh) 2004-06-09
US7094637B2 (en) 2006-08-22
WO2002089190A2 (de) 2002-11-07
US20040121569A1 (en) 2004-06-24
JP2004526327A (ja) 2004-08-26
DE50211205D1 (de) 2007-12-27

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8131 Rejection