JPWO2020101806A5 - - Google Patents
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- Publication number
- JPWO2020101806A5 JPWO2020101806A5 JP2021524215A JP2021524215A JPWO2020101806A5 JP WO2020101806 A5 JPWO2020101806 A5 JP WO2020101806A5 JP 2021524215 A JP2021524215 A JP 2021524215A JP 2021524215 A JP2021524215 A JP 2021524215A JP WO2020101806 A5 JPWO2020101806 A5 JP WO2020101806A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- exposing
- precursor
- silicon oxide
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/189,429 US10586707B2 (en) | 2017-05-26 | 2018-11-13 | Selective deposition of metal silicides |
| US16/189,429 | 2018-11-13 | ||
| PCT/US2019/052967 WO2020101806A1 (en) | 2018-11-13 | 2019-09-25 | Selective deposition of metal silicides and selective oxide removal |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2022506677A JP2022506677A (ja) | 2022-01-17 |
| JP2022506677A5 JP2022506677A5 (https=) | 2022-10-03 |
| JPWO2020101806A5 true JPWO2020101806A5 (https=) | 2022-10-03 |
| JP7503547B2 JP7503547B2 (ja) | 2024-06-20 |
Family
ID=70731667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021524215A Active JP7503547B2 (ja) | 2018-11-13 | 2019-09-25 | 金属シリサイドの選択的堆積及び酸化物の選択的除去 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP3881349A4 (https=) |
| JP (1) | JP7503547B2 (https=) |
| KR (1) | KR102843234B1 (https=) |
| CN (1) | CN113348532A (https=) |
| TW (1) | TWI833831B (https=) |
| WO (1) | WO2020101806A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115739190B (zh) * | 2022-11-14 | 2024-02-13 | 江南大学 | 一种植酸金属络合物催化剂及其制备方法与应用 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61128521A (ja) * | 1984-11-27 | 1986-06-16 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法 |
| JPH07283168A (ja) * | 1994-04-15 | 1995-10-27 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| KR100319888B1 (ko) * | 1998-06-16 | 2002-01-10 | 윤종용 | 선택적 금속층 형성방법, 이를 이용한 커패시터 형성 및 콘택홀 매립방법 |
| US9051641B2 (en) * | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
| US20040102033A1 (en) * | 2002-11-21 | 2004-05-27 | Texas Instruments, Incorporated | Method for forming a ternary diffusion barrier layer |
| US7780793B2 (en) | 2004-02-26 | 2010-08-24 | Applied Materials, Inc. | Passivation layer formation by plasma clean process to reduce native oxide growth |
| TW200734482A (en) * | 2005-03-18 | 2007-09-16 | Applied Materials Inc | Electroless deposition process on a contact containing silicon or silicide |
| US20070099806A1 (en) * | 2005-10-28 | 2007-05-03 | Stewart Michael P | Composition and method for selectively removing native oxide from silicon-containing surfaces |
| TW200746268A (en) | 2006-04-11 | 2007-12-16 | Applied Materials Inc | Process for forming cobalt-containing materials |
| US8455352B1 (en) * | 2012-05-24 | 2013-06-04 | Applied Materials, Inc. | Method for removing native oxide and associated residue from a substrate |
| JP6336866B2 (ja) * | 2013-10-23 | 2018-06-06 | 株式会社日立国際電気 | 半導体デバイスの製造方法、基板処理装置およびプログラム |
| US9875907B2 (en) * | 2015-11-20 | 2018-01-23 | Applied Materials, Inc. | Self-aligned shielding of silicon oxide |
| TWI716511B (zh) * | 2015-12-19 | 2021-01-21 | 美商應用材料股份有限公司 | 用於鎢原子層沉積製程作為成核層之正形非晶矽 |
| US10468263B2 (en) * | 2015-12-19 | 2019-11-05 | Applied Materials, Inc. | Tungsten deposition without barrier layer |
| US9981286B2 (en) * | 2016-03-08 | 2018-05-29 | Asm Ip Holding B.V. | Selective formation of metal silicides |
| US9803277B1 (en) * | 2016-06-08 | 2017-10-31 | Asm Ip Holding B.V. | Reaction chamber passivation and selective deposition of metallic films |
| US9805974B1 (en) * | 2016-06-08 | 2017-10-31 | Asm Ip Holding B.V. | Selective deposition of metallic films |
-
2019
- 2019-09-25 JP JP2021524215A patent/JP7503547B2/ja active Active
- 2019-09-25 CN CN201980074914.3A patent/CN113348532A/zh active Pending
- 2019-09-25 KR KR1020217017913A patent/KR102843234B1/ko active Active
- 2019-09-25 EP EP19884016.7A patent/EP3881349A4/en active Pending
- 2019-09-25 WO PCT/US2019/052967 patent/WO2020101806A1/en not_active Ceased
- 2019-11-07 TW TW108140376A patent/TWI833831B/zh active
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| JPWO2020101806A5 (https=) | ||
| JP2022506677A5 (https=) | ||
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