CN120530478A - 基板处理方法及基板处理系统 - Google Patents
基板处理方法及基板处理系统Info
- Publication number
- CN120530478A CN120530478A CN202480007859.7A CN202480007859A CN120530478A CN 120530478 A CN120530478 A CN 120530478A CN 202480007859 A CN202480007859 A CN 202480007859A CN 120530478 A CN120530478 A CN 120530478A
- Authority
- CN
- China
- Prior art keywords
- gas
- substrate
- region
- substrate processing
- processing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3346—Selectivity
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202363441559P | 2023-01-27 | 2023-01-27 | |
| US63/441,559 | 2023-01-27 | ||
| JP2023126394 | 2023-08-02 | ||
| JP2023-126394 | 2023-08-02 | ||
| PCT/JP2024/001705 WO2024157943A1 (ja) | 2023-01-27 | 2024-01-22 | 基板処理方法及び基板処理システム |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN120530478A true CN120530478A (zh) | 2025-08-22 |
Family
ID=91970573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202480007859.7A Pending CN120530478A (zh) | 2023-01-27 | 2024-01-22 | 基板处理方法及基板处理系统 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250349519A1 (https=) |
| EP (1) | EP4651182A1 (https=) |
| JP (1) | JP7813388B2 (https=) |
| KR (1) | KR20250140553A (https=) |
| CN (1) | CN120530478A (https=) |
| TW (1) | TW202503884A (https=) |
| WO (1) | WO2024157943A1 (https=) |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0547718A (ja) * | 1991-08-15 | 1993-02-26 | Sony Corp | ドライエツチング方法 |
| JP2008060171A (ja) * | 2006-08-29 | 2008-03-13 | Taiyo Nippon Sanso Corp | 半導体処理装置のクリーニング方法 |
| JP5968130B2 (ja) * | 2012-07-10 | 2016-08-10 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP6604738B2 (ja) * | 2015-04-10 | 2019-11-13 | 東京エレクトロン株式会社 | プラズマエッチング方法、パターン形成方法及びクリーニング方法 |
| US10283369B2 (en) * | 2016-08-10 | 2019-05-07 | Tokyo Electron Limited | Atomic layer etching using a boron-containing gas and hydrogen fluoride gas |
| US10546748B2 (en) * | 2017-02-17 | 2020-01-28 | Lam Research Corporation | Tin oxide films in semiconductor device manufacturing |
| US11355353B2 (en) * | 2018-01-30 | 2022-06-07 | Lam Research Corporation | Tin oxide mandrels in patterning |
| KR20200144580A (ko) | 2018-05-11 | 2020-12-29 | 램 리써치 코포레이션 | Euv 패터닝 가능한 하드 마스크들을 제조하기 위한 방법들 |
| TWI837391B (zh) * | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| KR102748920B1 (ko) * | 2019-06-27 | 2024-12-30 | 램 리써치 코포레이션 | 교번하는 에칭 및 패시베이션 프로세스 |
| TW202536930A (zh) * | 2019-06-28 | 2025-09-16 | 美商蘭姆研究公司 | 光阻膜的乾式腔室清潔 |
| EP4078292A4 (en) * | 2020-07-07 | 2023-11-22 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| CN116134381A (zh) * | 2020-07-17 | 2023-05-16 | 朗姆研究公司 | 含钽光致抗蚀剂 |
-
2024
- 2024-01-22 CN CN202480007859.7A patent/CN120530478A/zh active Pending
- 2024-01-22 JP JP2024573050A patent/JP7813388B2/ja active Active
- 2024-01-22 EP EP24747270.7A patent/EP4651182A1/en active Pending
- 2024-01-22 WO PCT/JP2024/001705 patent/WO2024157943A1/ja not_active Ceased
- 2024-01-22 KR KR1020257027514A patent/KR20250140553A/ko active Pending
- 2024-01-25 TW TW113102926A patent/TW202503884A/zh unknown
-
2025
- 2025-07-23 US US19/277,446 patent/US20250349519A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP4651182A1 (en) | 2025-11-19 |
| JP7813388B2 (ja) | 2026-02-12 |
| JPWO2024157943A1 (https=) | 2024-08-02 |
| WO2024157943A1 (ja) | 2024-08-02 |
| KR20250140553A (ko) | 2025-09-25 |
| US20250349519A1 (en) | 2025-11-13 |
| TW202503884A (zh) | 2025-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |