CN120530478A - 基板处理方法及基板处理系统 - Google Patents

基板处理方法及基板处理系统

Info

Publication number
CN120530478A
CN120530478A CN202480007859.7A CN202480007859A CN120530478A CN 120530478 A CN120530478 A CN 120530478A CN 202480007859 A CN202480007859 A CN 202480007859A CN 120530478 A CN120530478 A CN 120530478A
Authority
CN
China
Prior art keywords
gas
substrate
region
substrate processing
processing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480007859.7A
Other languages
English (en)
Chinese (zh)
Inventor
小野健太
藤本势二
冈田聪一郎
原亚梨沙
阪上琢也
中根由太
熊仓翔
西冢哲也
本田昌伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN120530478A publication Critical patent/CN120530478A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041Photolithographic processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0042Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/36Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
    • H01J2237/3341Reactive etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
    • H01J2237/3343Problems associated with etching
    • H01J2237/3346Selectivity

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
CN202480007859.7A 2023-01-27 2024-01-22 基板处理方法及基板处理系统 Pending CN120530478A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202363441559P 2023-01-27 2023-01-27
US63/441,559 2023-01-27
JP2023126394 2023-08-02
JP2023-126394 2023-08-02
PCT/JP2024/001705 WO2024157943A1 (ja) 2023-01-27 2024-01-22 基板処理方法及び基板処理システム

Publications (1)

Publication Number Publication Date
CN120530478A true CN120530478A (zh) 2025-08-22

Family

ID=91970573

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480007859.7A Pending CN120530478A (zh) 2023-01-27 2024-01-22 基板处理方法及基板处理系统

Country Status (7)

Country Link
US (1) US20250349519A1 (https=)
EP (1) EP4651182A1 (https=)
JP (1) JP7813388B2 (https=)
KR (1) KR20250140553A (https=)
CN (1) CN120530478A (https=)
TW (1) TW202503884A (https=)
WO (1) WO2024157943A1 (https=)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0547718A (ja) * 1991-08-15 1993-02-26 Sony Corp ドライエツチング方法
JP2008060171A (ja) * 2006-08-29 2008-03-13 Taiyo Nippon Sanso Corp 半導体処理装置のクリーニング方法
JP5968130B2 (ja) * 2012-07-10 2016-08-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6604738B2 (ja) * 2015-04-10 2019-11-13 東京エレクトロン株式会社 プラズマエッチング方法、パターン形成方法及びクリーニング方法
US10283369B2 (en) * 2016-08-10 2019-05-07 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
US10546748B2 (en) * 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
US11355353B2 (en) * 2018-01-30 2022-06-07 Lam Research Corporation Tin oxide mandrels in patterning
KR20200144580A (ko) 2018-05-11 2020-12-29 램 리써치 코포레이션 Euv 패터닝 가능한 하드 마스크들을 제조하기 위한 방법들
TWI837391B (zh) * 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR102748920B1 (ko) * 2019-06-27 2024-12-30 램 리써치 코포레이션 교번하는 에칭 및 패시베이션 프로세스
TW202536930A (zh) * 2019-06-28 2025-09-16 美商蘭姆研究公司 光阻膜的乾式腔室清潔
EP4078292A4 (en) * 2020-07-07 2023-11-22 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
CN116134381A (zh) * 2020-07-17 2023-05-16 朗姆研究公司 含钽光致抗蚀剂

Also Published As

Publication number Publication date
EP4651182A1 (en) 2025-11-19
JP7813388B2 (ja) 2026-02-12
JPWO2024157943A1 (https=) 2024-08-02
WO2024157943A1 (ja) 2024-08-02
KR20250140553A (ko) 2025-09-25
US20250349519A1 (en) 2025-11-13
TW202503884A (zh) 2025-01-16

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