JP7813388B2 - 基板処理方法及び基板処理システム - Google Patents

基板処理方法及び基板処理システム

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Publication number
JP7813388B2
JP7813388B2 JP2024573050A JP2024573050A JP7813388B2 JP 7813388 B2 JP7813388 B2 JP 7813388B2 JP 2024573050 A JP2024573050 A JP 2024573050A JP 2024573050 A JP2024573050 A JP 2024573050A JP 7813388 B2 JP7813388 B2 JP 7813388B2
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JP
Japan
Prior art keywords
gas
substrate
region
substrate processing
processing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024573050A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024157943A1 (https=
JPWO2024157943A5 (https=
Inventor
健太 小野
藤本　勢二
聡一郎 岡田
亜梨沙 原
▲琢▼也 阪上
由太 中根
翔 熊倉
哲也 西塚
昌伸 本田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
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Publication date
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Publication of JPWO2024157943A1 publication Critical patent/JPWO2024157943A1/ja
Publication of JPWO2024157943A5 publication Critical patent/JPWO2024157943A5/ja
Application granted granted Critical
Publication of JP7813388B2 publication Critical patent/JP7813388B2/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2024573050A 2023-01-27 2024-01-22 基板処理方法及び基板処理システム Active JP7813388B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202363441559P 2023-01-27 2023-01-27
US63/441,559 2023-01-27
JP2023126394 2023-08-02
JP2023126394 2023-08-02
PCT/JP2024/001705 WO2024157943A1 (ja) 2023-01-27 2024-01-22 基板処理方法及び基板処理システム

Publications (3)

Publication Number Publication Date
JPWO2024157943A1 JPWO2024157943A1 (https=) 2024-08-02
JPWO2024157943A5 JPWO2024157943A5 (https=) 2025-07-25
JP7813388B2 true JP7813388B2 (ja) 2026-02-12

Family

ID=91970573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024573050A Active JP7813388B2 (ja) 2023-01-27 2024-01-22 基板処理方法及び基板処理システム

Country Status (7)

Country Link
US (1) US20250349519A1 (https=)
EP (1) EP4651182A1 (https=)
JP (1) JP7813388B2 (https=)
KR (1) KR20250140553A (https=)
CN (1) CN120530478A (https=)
TW (1) TW202503884A (https=)
WO (1) WO2024157943A1 (https=)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008060171A (ja) 2006-08-29 2008-03-13 Taiyo Nippon Sanso Corp 半導体処理装置のクリーニング方法
JP2014017406A (ja) 2012-07-10 2014-01-30 Tokyo Electron Ltd プラズマ処理方法及びプラズマ処理装置
JP2016201476A (ja) 2015-04-10 2016-12-01 東京エレクトロン株式会社 プラズマエッチング方法、パターン形成方法及びクリーニング方法
JP2018026566A (ja) 2016-08-10 2018-02-15 東京エレクトロン株式会社 ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング
JP2020510994A (ja) 2017-02-17 2020-04-09 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 半導体デバイス製造における酸化スズ膜
JP2021511673A (ja) 2018-01-30 2021-05-06 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ パターニングにおける酸化スズマンドレル
WO2022010809A1 (en) 2020-07-07 2022-01-13 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
WO2022016124A1 (en) 2020-07-17 2022-01-20 Lam Research Corporation Photoresists containing tantalum
JP2022538040A (ja) 2019-06-26 2022-08-31 ラム リサーチ コーポレーション ハロゲン化化学物質によるフォトレジスト現像
JP2022538554A (ja) 2019-06-28 2022-09-05 ラム リサーチ コーポレーション フォトレジスト膜のチャンバ乾式洗浄
JP2022539991A (ja) 2019-06-27 2022-09-14 ラム リサーチ コーポレーション 交互のエッチングプロセスおよび不動態化プロセス

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0547718A (ja) * 1991-08-15 1993-02-26 Sony Corp ドライエツチング方法
KR20200144580A (ko) 2018-05-11 2020-12-29 램 리써치 코포레이션 Euv 패터닝 가능한 하드 마스크들을 제조하기 위한 방법들

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008060171A (ja) 2006-08-29 2008-03-13 Taiyo Nippon Sanso Corp 半導体処理装置のクリーニング方法
JP2014017406A (ja) 2012-07-10 2014-01-30 Tokyo Electron Ltd プラズマ処理方法及びプラズマ処理装置
JP2016201476A (ja) 2015-04-10 2016-12-01 東京エレクトロン株式会社 プラズマエッチング方法、パターン形成方法及びクリーニング方法
JP2018026566A (ja) 2016-08-10 2018-02-15 東京エレクトロン株式会社 ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング
JP2020510994A (ja) 2017-02-17 2020-04-09 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 半導体デバイス製造における酸化スズ膜
JP2021511673A (ja) 2018-01-30 2021-05-06 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ パターニングにおける酸化スズマンドレル
JP2022538040A (ja) 2019-06-26 2022-08-31 ラム リサーチ コーポレーション ハロゲン化化学物質によるフォトレジスト現像
JP2022539991A (ja) 2019-06-27 2022-09-14 ラム リサーチ コーポレーション 交互のエッチングプロセスおよび不動態化プロセス
JP2022538554A (ja) 2019-06-28 2022-09-05 ラム リサーチ コーポレーション フォトレジスト膜のチャンバ乾式洗浄
WO2022010809A1 (en) 2020-07-07 2022-01-13 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
WO2022016124A1 (en) 2020-07-17 2022-01-20 Lam Research Corporation Photoresists containing tantalum

Also Published As

Publication number Publication date
CN120530478A (zh) 2025-08-22
EP4651182A1 (en) 2025-11-19
JPWO2024157943A1 (https=) 2024-08-02
WO2024157943A1 (ja) 2024-08-02
KR20250140553A (ko) 2025-09-25
US20250349519A1 (en) 2025-11-13
TW202503884A (zh) 2025-01-16

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