JP2022516772A5 - - Google Patents
Info
- Publication number
- JP2022516772A5 JP2022516772A5 JP2021539908A JP2021539908A JP2022516772A5 JP 2022516772 A5 JP2022516772 A5 JP 2022516772A5 JP 2021539908 A JP2021539908 A JP 2021539908A JP 2021539908 A JP2021539908 A JP 2021539908A JP 2022516772 A5 JP2022516772 A5 JP 2022516772A5
- Authority
- JP
- Japan
- Prior art keywords
- ale
- metal
- substrate
- ligand
- isotropic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962792519P | 2019-01-15 | 2019-01-15 | |
| US62/792,519 | 2019-01-15 | ||
| US201962832932P | 2019-04-12 | 2019-04-12 | |
| US62/832,932 | 2019-04-12 | ||
| PCT/US2020/012518 WO2020150043A1 (en) | 2019-01-15 | 2020-01-07 | Metal atomic layer etch and deposition apparatuses and processes with metal-free ligands |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022516772A JP2022516772A (ja) | 2022-03-02 |
| JP2022516772A5 true JP2022516772A5 (https=) | 2024-04-30 |
| JP7541983B2 JP7541983B2 (ja) | 2024-08-29 |
Family
ID=71613695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021539908A Active JP7541983B2 (ja) | 2019-01-15 | 2020-01-07 | 金属原子層のエッチング堆積装置および金属フリー配位子による処理 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20220084838A1 (https=) |
| JP (1) | JP7541983B2 (https=) |
| KR (2) | KR102899337B1 (https=) |
| CN (1) | CN113316839B (https=) |
| TW (1) | TWI845595B (https=) |
| WO (1) | WO2020150043A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113474873A (zh) * | 2018-11-15 | 2021-10-01 | 朗姆研究公司 | 用基于卤素的化合物进行选择性蚀刻的原子层蚀刻系统 |
| US20240030037A1 (en) * | 2020-09-01 | 2024-01-25 | Adeka Corporation | Etching method |
| US11062921B1 (en) * | 2020-09-11 | 2021-07-13 | Applied Materials, Inc. | Systems and methods for aluminum-containing film removal |
| KR102896969B1 (ko) * | 2021-06-23 | 2025-12-09 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| US12272563B2 (en) | 2021-07-15 | 2025-04-08 | Applied Materials, Inc. | Metal oxide directional removal |
| US20230030188A1 (en) * | 2021-07-22 | 2023-02-02 | Entegris, Inc. | Adsorbents and methods for reducing contamination in wafer container microenvironments |
| KR102896968B1 (ko) * | 2021-08-26 | 2025-12-09 | 세메스 주식회사 | 기판 처리 장치 |
| KR102765372B1 (ko) * | 2021-11-16 | 2025-02-11 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| KR102737901B1 (ko) * | 2021-12-13 | 2024-12-04 | 한양대학교 에리카산학협력단 | 고유전율 박막의 원자층 식각 방법 및 원자층 식각 장치 |
| CN118648092A (zh) * | 2022-02-03 | 2024-09-13 | 默克专利股份有限公司 | 使用共反应物作为卤化剂的金属的原子层蚀刻 |
| KR20240012213A (ko) * | 2022-07-20 | 2024-01-29 | 삼성전자주식회사 | 원자층 식각 장치 및 그 장치를 기반한 원자층 식각 방법 |
| JP7812758B2 (ja) | 2022-07-29 | 2026-02-10 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| WO2024042597A1 (ja) * | 2022-08-23 | 2024-02-29 | 株式会社日立ハイテク | 半導体装置の製造方法および半導体製造装置 |
| US20240167148A1 (en) * | 2022-11-18 | 2024-05-23 | Applied Materials, Inc. | Methods of removing metal oxide using cleaning plasma |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0555186A (ja) * | 1991-08-27 | 1993-03-05 | Hitachi Ltd | 表面処理方法 |
| US8633115B2 (en) | 2011-11-30 | 2014-01-21 | Applied Materials, Inc. | Methods for atomic layer etching |
| US10121699B2 (en) * | 2015-08-05 | 2018-11-06 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| WO2017099718A1 (en) | 2015-12-08 | 2017-06-15 | Intel Corporation | Atomic layer etching of transition metals by halogen surface oxidation |
| US10229837B2 (en) * | 2016-02-04 | 2019-03-12 | Lam Research Corporation | Control of directionality in atomic layer etching |
| WO2017205658A1 (en) * | 2016-05-25 | 2017-11-30 | The Regents Of The University Of Colorado, A Body Corporate | Atomic layer etching on microdevices and nanodevices |
| US20170345665A1 (en) * | 2016-05-26 | 2017-11-30 | Tokyo Electron Limited | Atomic layer etching systems and methods |
| JP6817752B2 (ja) * | 2016-09-09 | 2021-01-20 | 株式会社日立ハイテク | エッチング方法およびエッチング装置 |
| KR102805391B1 (ko) * | 2016-12-09 | 2025-05-12 | 에이에스엠 아이피 홀딩 비.브이. | 열적 원자층 식각 공정 |
| US10692724B2 (en) * | 2016-12-23 | 2020-06-23 | Lam Research Corporation | Atomic layer etching methods and apparatus |
| US10224212B2 (en) * | 2017-01-27 | 2019-03-05 | Lam Research Corporation | Isotropic etching of film with atomic layer control |
-
2020
- 2020-01-07 CN CN202080009348.0A patent/CN113316839B/zh active Active
- 2020-01-07 WO PCT/US2020/012518 patent/WO2020150043A1/en not_active Ceased
- 2020-01-07 JP JP2021539908A patent/JP7541983B2/ja active Active
- 2020-01-07 KR KR1020257006182A patent/KR102899337B1/ko active Active
- 2020-01-07 KR KR1020217025723A patent/KR102774836B1/ko active Active
- 2020-01-07 US US17/419,841 patent/US20220084838A1/en active Pending
- 2020-01-13 TW TW109101027A patent/TWI845595B/zh active
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