JPWO2024084905A5 - - Google Patents

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Publication number
JPWO2024084905A5
JPWO2024084905A5 JP2024551384A JP2024551384A JPWO2024084905A5 JP WO2024084905 A5 JPWO2024084905 A5 JP WO2024084905A5 JP 2024551384 A JP2024551384 A JP 2024551384A JP 2024551384 A JP2024551384 A JP 2024551384A JP WO2024084905 A5 JPWO2024084905 A5 JP WO2024084905A5
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JP
Japan
Prior art keywords
layer
gan
nitride semiconductor
doped
impurity
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Pending
Application number
JP2024551384A
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English (en)
Japanese (ja)
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JPWO2024084905A1 (https=
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Priority claimed from PCT/JP2023/034856 external-priority patent/WO2024084905A1/ja
Publication of JPWO2024084905A1 publication Critical patent/JPWO2024084905A1/ja
Publication of JPWO2024084905A5 publication Critical patent/JPWO2024084905A5/ja
Pending legal-status Critical Current

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JP2024551384A 2022-10-17 2023-09-26 Pending JPWO2024084905A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022166304 2022-10-17
PCT/JP2023/034856 WO2024084905A1 (ja) 2022-10-17 2023-09-26 窒化物半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024084905A1 JPWO2024084905A1 (https=) 2024-04-25
JPWO2024084905A5 true JPWO2024084905A5 (https=) 2025-06-30

Family

ID=90737636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024551384A Pending JPWO2024084905A1 (https=) 2022-10-17 2023-09-26

Country Status (4)

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US (1) US20260107493A1 (https=)
JP (1) JPWO2024084905A1 (https=)
CN (1) CN120052069A (https=)
WO (1) WO2024084905A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007096261A (ja) * 2005-09-01 2007-04-12 Furukawa Electric Co Ltd:The 半導体素子
JP2013004681A (ja) * 2011-06-15 2013-01-07 Mitsubishi Electric Corp 窒化物半導体装置の製造方法
JP2013145782A (ja) * 2012-01-13 2013-07-25 Sharp Corp ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ
JP2019505459A (ja) * 2015-12-10 2019-02-28 アイキューイー ピーエルシーＩＱＥ ｐｌｃ 増加した圧縮応力によってシリコン基板上で成長させたｉｉｉ族窒化物構造物
JP6781095B2 (ja) * 2017-03-31 2020-11-04 エア・ウォーター株式会社 化合物半導体基板
WO2022113536A1 (ja) * 2020-11-26 2022-06-02 ローム株式会社 窒化物半導体装置およびその製造方法

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