JPWO2023223426A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2023223426A5
JPWO2023223426A5 JP2024521430A JP2024521430A JPWO2023223426A5 JP WO2023223426 A5 JPWO2023223426 A5 JP WO2023223426A5 JP 2024521430 A JP2024521430 A JP 2024521430A JP 2024521430 A JP2024521430 A JP 2024521430A JP WO2023223426 A5 JPWO2023223426 A5 JP WO2023223426A5
Authority
JP
Japan
Prior art keywords
voltage
circuit
power semiconductor
change
slope
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024521430A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023223426A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/020535 external-priority patent/WO2023223426A1/ja
Publication of JPWO2023223426A1 publication Critical patent/JPWO2023223426A1/ja
Publication of JPWO2023223426A5 publication Critical patent/JPWO2023223426A5/ja
Pending legal-status Critical Current

Links

Images

JP2024521430A 2022-05-17 2022-05-17 Pending JPWO2023223426A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/020535 WO2023223426A1 (ja) 2022-05-17 2022-05-17 電力用半導体素子の駆動回路および駆動方法ならびにパワーモジュール

Publications (2)

Publication Number Publication Date
JPWO2023223426A1 JPWO2023223426A1 (https=) 2023-11-23
JPWO2023223426A5 true JPWO2023223426A5 (https=) 2024-12-04

Family

ID=88834842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024521430A Pending JPWO2023223426A1 (https=) 2022-05-17 2022-05-17

Country Status (5)

Country Link
US (1) US20250274031A1 (https=)
JP (1) JPWO2023223426A1 (https=)
CN (1) CN119156770A (https=)
DE (1) DE112022007234T5 (https=)
WO (1) WO2023223426A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118353340B (zh) * 2024-06-18 2024-09-03 上海泰矽微电子有限公司 马达驱动电路、芯片和车辆设备

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7667524B2 (en) 2004-11-05 2010-02-23 International Rectifier Corporation Driver circuit and method with reduced DI/DT and having delay compensation
JP5138287B2 (ja) * 2007-06-27 2013-02-06 三菱電機株式会社 ゲート駆動装置
JP5065986B2 (ja) * 2008-05-12 2012-11-07 日立オートモティブシステムズ株式会社 半導体装置の駆動装置及びその駆動方法
JP5447575B2 (ja) * 2012-04-23 2014-03-19 株式会社デンソー 駆動装置
JP6197685B2 (ja) * 2014-02-19 2017-09-20 株式会社デンソー ゲート駆動回路
EP3057231B1 (de) * 2015-02-16 2019-04-10 Power Integrations Switzerland GmbH Steuerschaltung und Steuerverfahren zum Anschalten eines Leistungshalbleiterschalters
CN105356727B (zh) * 2015-11-27 2018-11-27 矽力杰半导体技术(杭州)有限公司 用于开关电源的开关管驱动控制方法以及控制电路
US9813055B2 (en) * 2016-04-01 2017-11-07 Ixys Corporation Gate driver that drives with a sequence of gate resistances
JP6836342B2 (ja) * 2016-06-22 2021-02-24 ルネサスエレクトロニクス株式会社 駆動装置および電力供給システム
JP6544318B2 (ja) * 2016-08-17 2019-07-17 株式会社デンソー トランジスタ駆動回路
JP6870240B2 (ja) * 2016-08-31 2021-05-12 富士電機株式会社 ゲート駆動装置
US10749519B2 (en) * 2017-04-26 2020-08-18 Mitushibhi Electric Corporation Semiconductor device driving method and driving apparatus and power conversion apparatus
US10491207B2 (en) * 2017-09-07 2019-11-26 Infineon Technologies Austria Ag Method of over current and over voltage protection of a power switch in combination with regulated DI/DT and DV/DT
JP7000968B2 (ja) * 2018-04-05 2022-01-19 株式会社デンソー スイッチの駆動回路
US11695409B2 (en) * 2019-04-09 2023-07-04 Mitsubishi Electric Corporation Drive circuit of power semiconductor element
JP7180626B2 (ja) * 2020-03-03 2022-11-30 株式会社デンソー ゲート駆動装置

Similar Documents

Publication Publication Date Title
US5986484A (en) Semiconductor device drive circuit with voltage surge suppression
US8174802B2 (en) Switching regulator and operations control method thereof
JP4629648B2 (ja) コンパレータ方式dc−dcコンバータ
EP0373693B1 (en) Generator of drive signals for transistors connected in a half-bridge configuration
JP6351736B2 (ja) 自己消弧型半導体素子の短絡保護回路
AU726077B2 (en) Gate control circuit for voltage drive switching element
JP2018186691A (ja) 半導体素子の駆動装置
JP6142917B2 (ja) パワーデバイスの駆動回路
JP6780596B2 (ja) スイッチング回路
JP2018153006A (ja) ゲート駆動装置
JP2009054639A (ja) 電力変換装置
JPWO2023223426A5 (https=)
JPWO2020121419A1 (ja) 電力用半導体素子の駆動回路、およびそれを用いた電力用半導体モジュール
CN101046698B (zh) 使用多于两个参考电源电压的参考电源电压电路
US12132392B2 (en) Power conversion device having semiconductor switching element
JP6622405B2 (ja) インバータ駆動装置
JPH10304650A (ja) 電圧駆動形スイッチ素子のゲート駆動回路
US20250274031A1 (en) Driving circuit and driving method for power semiconductor element, and power module
US3248572A (en) Voltage threshold detector
JP5928417B2 (ja) 半導体素子モジュール及びゲート駆動回路
WO2022255009A1 (ja) ゲート駆動装置
JP2017073969A (ja) 電圧駆動型半導体素子の駆動回路
CN110572140B (zh) 一种产生脉冲信号的电路和方法
CN109962605B (zh) 一种全桥整流器及自适应调节装置
US20250385666A1 (en) Semiconductor device