CN119156770A - 电力用半导体元件的驱动电路及驱动方法以及功率模块 - Google Patents

电力用半导体元件的驱动电路及驱动方法以及功率模块 Download PDF

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Publication number
CN119156770A
CN119156770A CN202280095748.7A CN202280095748A CN119156770A CN 119156770 A CN119156770 A CN 119156770A CN 202280095748 A CN202280095748 A CN 202280095748A CN 119156770 A CN119156770 A CN 119156770A
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CN
China
Prior art keywords
voltage
circuit
power semiconductor
gate
miller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280095748.7A
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English (en)
Chinese (zh)
Inventor
诸熊健一
酒井拓也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN119156770A publication Critical patent/CN119156770A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28—Modifications for introducing a time delay before switching
    • H03K17/284—Modifications for introducing a time delay before switching in field effect transistor switches

Landscapes

  • Power Conversion In General (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
CN202280095748.7A 2022-05-17 2022-05-17 电力用半导体元件的驱动电路及驱动方法以及功率模块 Pending CN119156770A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/020535 WO2023223426A1 (ja) 2022-05-17 2022-05-17 電力用半導体素子の駆動回路および駆動方法ならびにパワーモジュール

Publications (1)

Publication Number Publication Date
CN119156770A true CN119156770A (zh) 2024-12-17

Family

ID=88834842

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280095748.7A Pending CN119156770A (zh) 2022-05-17 2022-05-17 电力用半导体元件的驱动电路及驱动方法以及功率模块

Country Status (5)

Country Link
US (1) US20250274031A1 (https=)
JP (1) JPWO2023223426A1 (https=)
CN (1) CN119156770A (https=)
DE (1) DE112022007234T5 (https=)
WO (1) WO2023223426A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118353340B (zh) * 2024-06-18 2024-09-03 上海泰矽微电子有限公司 马达驱动电路、芯片和车辆设备

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7667524B2 (en) 2004-11-05 2010-02-23 International Rectifier Corporation Driver circuit and method with reduced DI/DT and having delay compensation
JP5138287B2 (ja) * 2007-06-27 2013-02-06 三菱電機株式会社 ゲート駆動装置
JP5065986B2 (ja) * 2008-05-12 2012-11-07 日立オートモティブシステムズ株式会社 半導体装置の駆動装置及びその駆動方法
JP5447575B2 (ja) * 2012-04-23 2014-03-19 株式会社デンソー 駆動装置
JP6197685B2 (ja) * 2014-02-19 2017-09-20 株式会社デンソー ゲート駆動回路
EP3057231B1 (de) * 2015-02-16 2019-04-10 Power Integrations Switzerland GmbH Steuerschaltung und Steuerverfahren zum Anschalten eines Leistungshalbleiterschalters
CN105356727B (zh) * 2015-11-27 2018-11-27 矽力杰半导体技术(杭州)有限公司 用于开关电源的开关管驱动控制方法以及控制电路
US9813055B2 (en) * 2016-04-01 2017-11-07 Ixys Corporation Gate driver that drives with a sequence of gate resistances
JP6836342B2 (ja) * 2016-06-22 2021-02-24 ルネサスエレクトロニクス株式会社 駆動装置および電力供給システム
JP6544318B2 (ja) * 2016-08-17 2019-07-17 株式会社デンソー トランジスタ駆動回路
JP6870240B2 (ja) * 2016-08-31 2021-05-12 富士電機株式会社 ゲート駆動装置
US10749519B2 (en) * 2017-04-26 2020-08-18 Mitushibhi Electric Corporation Semiconductor device driving method and driving apparatus and power conversion apparatus
US10491207B2 (en) * 2017-09-07 2019-11-26 Infineon Technologies Austria Ag Method of over current and over voltage protection of a power switch in combination with regulated DI/DT and DV/DT
JP7000968B2 (ja) * 2018-04-05 2022-01-19 株式会社デンソー スイッチの駆動回路
US11695409B2 (en) * 2019-04-09 2023-07-04 Mitsubishi Electric Corporation Drive circuit of power semiconductor element
JP7180626B2 (ja) * 2020-03-03 2022-11-30 株式会社デンソー ゲート駆動装置

Also Published As

Publication number Publication date
DE112022007234T5 (de) 2025-03-13
WO2023223426A1 (ja) 2023-11-23
US20250274031A1 (en) 2025-08-28
JPWO2023223426A1 (https=) 2023-11-23

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