JPWO2023090293A5 - - Google Patents

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Publication number
JPWO2023090293A5
JPWO2023090293A5 JP2023561585A JP2023561585A JPWO2023090293A5 JP WO2023090293 A5 JPWO2023090293 A5 JP WO2023090293A5 JP 2023561585 A JP2023561585 A JP 2023561585A JP 2023561585 A JP2023561585 A JP 2023561585A JP WO2023090293 A5 JPWO2023090293 A5 JP WO2023090293A5
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JP
Japan
Prior art keywords
electrode
dielectric layer
insulating film
gate insulating
drain electrode
Prior art date
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Application number
JP2023561585A
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English (en)
Japanese (ja)
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JP7616417B2 (ja
JPWO2023090293A1 (https=
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Priority claimed from PCT/JP2022/042259 external-priority patent/WO2023090293A1/ja
Publication of JPWO2023090293A1 publication Critical patent/JPWO2023090293A1/ja
Publication of JPWO2023090293A5 publication Critical patent/JPWO2023090293A5/ja
Application granted granted Critical
Publication of JP7616417B2 publication Critical patent/JP7616417B2/ja
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Anticipated expiration legal-status Critical

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JP2023561585A 2021-11-17 2022-11-14 電子素子、および回路装置 Active JP7616417B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021187089 2021-11-17
JP2021187089 2021-11-17
PCT/JP2022/042259 WO2023090293A1 (ja) 2021-11-17 2022-11-14 電子素子、および回路装置

Publications (3)

Publication Number Publication Date
JPWO2023090293A1 JPWO2023090293A1 (https=) 2023-05-25
JPWO2023090293A5 true JPWO2023090293A5 (https=) 2024-05-30
JP7616417B2 JP7616417B2 (ja) 2025-01-17

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ID=86396994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023561585A Active JP7616417B2 (ja) 2021-11-17 2022-11-14 電子素子、および回路装置

Country Status (4)

Country Link
US (1) US20240258307A1 (https=)
JP (1) JP7616417B2 (https=)
CN (1) CN118202473A (https=)
WO (1) WO2023090293A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7806771B2 (ja) * 2023-08-28 2026-01-27 株式会社村田製作所 インダクタ素子及び集積回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3318086B2 (ja) * 1993-11-17 2002-08-26 新潟精密株式会社 インダクタンス可変素子
EP2515337B1 (en) * 2008-12-24 2016-02-24 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
JP2011205017A (ja) * 2010-03-26 2011-10-13 Dainippon Printing Co Ltd 薄膜トランジスタ、薄膜集積回路装置及びそれらの製造方法
JP2013149648A (ja) * 2012-01-17 2013-08-01 Renesas Electronics Corp 半導体装置とその製造方法
US9634645B2 (en) * 2013-03-14 2017-04-25 Qualcomm Incorporated Integration of a replica circuit and a transformer above a dielectric substrate
US10008513B2 (en) * 2013-09-05 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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