JPWO2022265058A5 - - Google Patents

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Publication number
JPWO2022265058A5
JPWO2022265058A5 JP2023530392A JP2023530392A JPWO2022265058A5 JP WO2022265058 A5 JPWO2022265058 A5 JP WO2022265058A5 JP 2023530392 A JP2023530392 A JP 2023530392A JP 2023530392 A JP2023530392 A JP 2023530392A JP WO2022265058 A5 JPWO2022265058 A5 JP WO2022265058A5
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JP
Japan
Prior art keywords
layer
nonmagnetic
laminated film
ferromagnetic
magnetic laminated
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Pending
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JP2023530392A
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English (en)
Japanese (ja)
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JPWO2022265058A1 (https=
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Priority claimed from PCT/JP2022/024040 external-priority patent/WO2022265058A1/ja
Publication of JPWO2022265058A1 publication Critical patent/JPWO2022265058A1/ja
Publication of JPWO2022265058A5 publication Critical patent/JPWO2022265058A5/ja
Pending legal-status Critical Current

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JP2023530392A 2021-06-15 2022-06-15 Pending JPWO2022265058A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021099796 2021-06-15
PCT/JP2022/024040 WO2022265058A1 (ja) 2021-06-15 2022-06-15 磁性積層膜及び磁気抵抗効果素子

Publications (2)

Publication Number Publication Date
JPWO2022265058A1 JPWO2022265058A1 (https=) 2022-12-22
JPWO2022265058A5 true JPWO2022265058A5 (https=) 2024-03-18

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ID=84527559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023530392A Pending JPWO2022265058A1 (https=) 2021-06-15 2022-06-15

Country Status (5)

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US (1) US20250031581A1 (https=)
JP (1) JPWO2022265058A1 (https=)
KR (1) KR20240021190A (https=)
CN (1) CN117480619A (https=)
WO (1) WO2022265058A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240321333A1 (en) * 2023-03-24 2024-09-26 Samsung Electronics Co., Ltd. Magnetic tunneling junction device capable of magnetic switching without external magnetic field and memory device including the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9245608B2 (en) * 2011-09-22 2016-01-26 Qualcomm Incorporated Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device
JP6168578B2 (ja) 2014-08-08 2017-07-26 国立大学法人東北大学 磁気抵抗効果素子、及び磁気メモリ装置
WO2016159017A1 (ja) 2015-03-31 2016-10-06 国立大学法人東北大学 磁気抵抗効果素子、磁気メモリ装置、製造方法、動作方法、及び集積回路
US10461242B2 (en) * 2017-12-30 2019-10-29 Spin Memory, Inc. Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications
WO2019155957A1 (ja) * 2018-02-06 2019-08-15 国立大学法人東北大学 磁気抵抗効果素子、回路装置及び回路ユニット
JP7267623B2 (ja) 2018-02-13 2023-05-02 国立大学法人東北大学 磁気抵抗効果素子及び磁気メモリ
JP7211252B2 (ja) * 2018-05-16 2023-01-24 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ

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