JPWO2022265058A1 - - Google Patents
Info
- Publication number
- JPWO2022265058A1 JPWO2022265058A1 JP2023530392A JP2023530392A JPWO2022265058A1 JP WO2022265058 A1 JPWO2022265058 A1 JP WO2022265058A1 JP 2023530392 A JP2023530392 A JP 2023530392A JP 2023530392 A JP2023530392 A JP 2023530392A JP WO2022265058 A1 JPWO2022265058 A1 JP WO2022265058A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/40—Devices controlled by magnetic fields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
- H10N52/85—Materials of the active region
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021099796 | 2021-06-15 | ||
| PCT/JP2022/024040 WO2022265058A1 (ja) | 2021-06-15 | 2022-06-15 | 磁性積層膜及び磁気抵抗効果素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022265058A1 true JPWO2022265058A1 (https=) | 2022-12-22 |
| JPWO2022265058A5 JPWO2022265058A5 (https=) | 2024-03-18 |
Family
ID=84527559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023530392A Pending JPWO2022265058A1 (https=) | 2021-06-15 | 2022-06-15 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250031581A1 (https=) |
| JP (1) | JPWO2022265058A1 (https=) |
| KR (1) | KR20240021190A (https=) |
| CN (1) | CN117480619A (https=) |
| WO (1) | WO2022265058A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240321333A1 (en) * | 2023-03-24 | 2024-09-26 | Samsung Electronics Co., Ltd. | Magnetic tunneling junction device capable of magnetic switching without external magnetic field and memory device including the same |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9245608B2 (en) * | 2011-09-22 | 2016-01-26 | Qualcomm Incorporated | Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device |
| JP6168578B2 (ja) | 2014-08-08 | 2017-07-26 | 国立大学法人東北大学 | 磁気抵抗効果素子、及び磁気メモリ装置 |
| WO2016159017A1 (ja) | 2015-03-31 | 2016-10-06 | 国立大学法人東北大学 | 磁気抵抗効果素子、磁気メモリ装置、製造方法、動作方法、及び集積回路 |
| US10461242B2 (en) * | 2017-12-30 | 2019-10-29 | Spin Memory, Inc. | Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications |
| WO2019155957A1 (ja) * | 2018-02-06 | 2019-08-15 | 国立大学法人東北大学 | 磁気抵抗効果素子、回路装置及び回路ユニット |
| JP7267623B2 (ja) | 2018-02-13 | 2023-05-02 | 国立大学法人東北大学 | 磁気抵抗効果素子及び磁気メモリ |
| JP7211252B2 (ja) * | 2018-05-16 | 2023-01-24 | Tdk株式会社 | スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ |
-
2022
- 2022-06-15 US US18/569,910 patent/US20250031581A1/en active Pending
- 2022-06-15 CN CN202280042206.3A patent/CN117480619A/zh active Pending
- 2022-06-15 WO PCT/JP2022/024040 patent/WO2022265058A1/ja not_active Ceased
- 2022-06-15 KR KR1020237044389A patent/KR20240021190A/ko active Pending
- 2022-06-15 JP JP2023530392A patent/JPWO2022265058A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20240021190A (ko) | 2024-02-16 |
| US20250031581A1 (en) | 2025-01-23 |
| CN117480619A (zh) | 2024-01-30 |
| WO2022265058A1 (ja) | 2022-12-22 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231214 |
|
| A80 | Written request to apply exceptions to lack of novelty of invention |
Free format text: JAPANESE INTERMEDIATE CODE: A801 Effective date: 20231214 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20231214 |
|
| A80 | Written request to apply exceptions to lack of novelty of invention |
Free format text: JAPANESE INTERMEDIATE CODE: A80 Effective date: 20231214 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250512 |