KR20240021190A - 자성 적층막 및 자기 저항 효과 소자 - Google Patents
자성 적층막 및 자기 저항 효과 소자 Download PDFInfo
- Publication number
- KR20240021190A KR20240021190A KR1020237044389A KR20237044389A KR20240021190A KR 20240021190 A KR20240021190 A KR 20240021190A KR 1020237044389 A KR1020237044389 A KR 1020237044389A KR 20237044389 A KR20237044389 A KR 20237044389A KR 20240021190 A KR20240021190 A KR 20240021190A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- magnetic
- ferromagnetic
- laminated film
- ferromagnetic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/40—Devices controlled by magnetic fields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
- H10N52/85—Materials of the active region
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2021-099796 | 2021-06-15 | ||
| JP2021099796 | 2021-06-15 | ||
| PCT/JP2022/024040 WO2022265058A1 (ja) | 2021-06-15 | 2022-06-15 | 磁性積層膜及び磁気抵抗効果素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240021190A true KR20240021190A (ko) | 2024-02-16 |
Family
ID=84527559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237044389A Pending KR20240021190A (ko) | 2021-06-15 | 2022-06-15 | 자성 적층막 및 자기 저항 효과 소자 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250031581A1 (https=) |
| JP (1) | JPWO2022265058A1 (https=) |
| KR (1) | KR20240021190A (https=) |
| CN (1) | CN117480619A (https=) |
| WO (1) | WO2022265058A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240321333A1 (en) * | 2023-03-24 | 2024-09-26 | Samsung Electronics Co., Ltd. | Magnetic tunneling junction device capable of magnetic switching without external magnetic field and memory device including the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016021468A1 (ja) | 2014-08-08 | 2016-02-11 | 国立大学法人東北大学 | 磁気抵抗効果素子、及び磁気メモリ装置 |
| WO2016159017A1 (ja) | 2015-03-31 | 2016-10-06 | 国立大学法人東北大学 | 磁気抵抗効果素子、磁気メモリ装置、製造方法、動作方法、及び集積回路 |
| WO2019159962A1 (ja) | 2018-02-13 | 2019-08-22 | 国立大学法人東北大学 | 磁気抵抗効果素子及び磁気メモリ |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9245608B2 (en) * | 2011-09-22 | 2016-01-26 | Qualcomm Incorporated | Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device |
| US10461242B2 (en) * | 2017-12-30 | 2019-10-29 | Spin Memory, Inc. | Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications |
| WO2019155957A1 (ja) * | 2018-02-06 | 2019-08-15 | 国立大学法人東北大学 | 磁気抵抗効果素子、回路装置及び回路ユニット |
| JP7211252B2 (ja) * | 2018-05-16 | 2023-01-24 | Tdk株式会社 | スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ |
-
2022
- 2022-06-15 US US18/569,910 patent/US20250031581A1/en active Pending
- 2022-06-15 CN CN202280042206.3A patent/CN117480619A/zh active Pending
- 2022-06-15 WO PCT/JP2022/024040 patent/WO2022265058A1/ja not_active Ceased
- 2022-06-15 KR KR1020237044389A patent/KR20240021190A/ko active Pending
- 2022-06-15 JP JP2023530392A patent/JPWO2022265058A1/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016021468A1 (ja) | 2014-08-08 | 2016-02-11 | 国立大学法人東北大学 | 磁気抵抗効果素子、及び磁気メモリ装置 |
| WO2016159017A1 (ja) | 2015-03-31 | 2016-10-06 | 国立大学法人東北大学 | 磁気抵抗効果素子、磁気メモリ装置、製造方法、動作方法、及び集積回路 |
| WO2019159962A1 (ja) | 2018-02-13 | 2019-08-22 | 国立大学法人東北大学 | 磁気抵抗効果素子及び磁気メモリ |
Non-Patent Citations (1)
| Title |
|---|
| Nature Materials, volume 10, pp.347-351(2011) |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2022265058A1 (https=) | 2022-12-22 |
| US20250031581A1 (en) | 2025-01-23 |
| CN117480619A (zh) | 2024-01-30 |
| WO2022265058A1 (ja) | 2022-12-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| D13 | Search requested |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D13-SRH-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
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| D13-X000 | Search requested |
St.27 status event code: A-1-2-D10-D13-srh-X000 |
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| D21 | Rejection of application intended |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE) |
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| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
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| P11 | Amendment of application requested |
Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
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| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |