CN117480619A - 磁性层叠膜和磁阻效应元件 - Google Patents

磁性层叠膜和磁阻效应元件 Download PDF

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Publication number
CN117480619A
CN117480619A CN202280042206.3A CN202280042206A CN117480619A CN 117480619 A CN117480619 A CN 117480619A CN 202280042206 A CN202280042206 A CN 202280042206A CN 117480619 A CN117480619 A CN 117480619A
Authority
CN
China
Prior art keywords
layer
nonmagnetic
ferromagnetic
laminated film
nonmagnetic layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280042206.3A
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English (en)
Chinese (zh)
Inventor
斋藤好昭
远藤哲郎
池田正二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
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Tohoku University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University NUC filed Critical Tohoku University NUC
Publication of CN117480619A publication Critical patent/CN117480619A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H10N52/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
CN202280042206.3A 2021-06-15 2022-06-15 磁性层叠膜和磁阻效应元件 Pending CN117480619A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-099796 2021-06-15
JP2021099796 2021-06-15
PCT/JP2022/024040 WO2022265058A1 (ja) 2021-06-15 2022-06-15 磁性積層膜及び磁気抵抗効果素子

Publications (1)

Publication Number Publication Date
CN117480619A true CN117480619A (zh) 2024-01-30

Family

ID=84527559

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280042206.3A Pending CN117480619A (zh) 2021-06-15 2022-06-15 磁性层叠膜和磁阻效应元件

Country Status (5)

Country Link
US (1) US20250031581A1 (https=)
JP (1) JPWO2022265058A1 (https=)
KR (1) KR20240021190A (https=)
CN (1) CN117480619A (https=)
WO (1) WO2022265058A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240321333A1 (en) * 2023-03-24 2024-09-26 Samsung Electronics Co., Ltd. Magnetic tunneling junction device capable of magnetic switching without external magnetic field and memory device including the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9245608B2 (en) * 2011-09-22 2016-01-26 Qualcomm Incorporated Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device
JP6168578B2 (ja) 2014-08-08 2017-07-26 国立大学法人東北大学 磁気抵抗効果素子、及び磁気メモリ装置
WO2016159017A1 (ja) 2015-03-31 2016-10-06 国立大学法人東北大学 磁気抵抗効果素子、磁気メモリ装置、製造方法、動作方法、及び集積回路
US10461242B2 (en) * 2017-12-30 2019-10-29 Spin Memory, Inc. Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications
WO2019155957A1 (ja) * 2018-02-06 2019-08-15 国立大学法人東北大学 磁気抵抗効果素子、回路装置及び回路ユニット
JP7267623B2 (ja) 2018-02-13 2023-05-02 国立大学法人東北大学 磁気抵抗効果素子及び磁気メモリ
JP7211252B2 (ja) * 2018-05-16 2023-01-24 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ

Also Published As

Publication number Publication date
KR20240021190A (ko) 2024-02-16
JPWO2022265058A1 (https=) 2022-12-22
US20250031581A1 (en) 2025-01-23
WO2022265058A1 (ja) 2022-12-22

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