JP7359696B2 - 一次元及び二次元磁場を測定するための磁気センサセル及びその磁気センサセルを使用して磁場を測定する方法 - Google Patents
一次元及び二次元磁場を測定するための磁気センサセル及びその磁気センサセルを使用して磁場を測定する方法 Download PDFInfo
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- JP7359696B2 JP7359696B2 JP2019554380A JP2019554380A JP7359696B2 JP 7359696 B2 JP7359696 B2 JP 7359696B2 JP 2019554380 A JP2019554380 A JP 2019554380A JP 2019554380 A JP2019554380 A JP 2019554380A JP 7359696 B2 JP7359696 B2 JP 7359696B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
Description
2 磁気トンネル接合
21 センス層
210 センス磁化
201′ センス磁化の面内成分
201″ センス磁化の面外成分
211 強磁性層
212 非磁性層
22 トンネル障壁層
23 参照層
230 参照磁化
24 反強磁性層
3 電流線
31 加熱電流
32 センス電流
4 磁場線
41 センス磁場電流
42 センス磁場
43 参照場電流
44 参照磁場
45 外部磁場
R 磁気トンネル接合の抵抗
Θ 角度
β 角度
Claims (9)
- 参照層の面に実質的に平行に配向された参照磁化を有する参照層と、センス磁化を有するセンス層と、前記センス層及び前記参照層の間のトンネル障壁層とを備える磁気トンネル接合と
を備える、磁気センサセルにおいて、
前記センス層は、前記センス磁化が前記センス層の平面に垂直な初期方向と前記センス層の前記平面に平行な方向との間で配向可能であるように、前記センス層の前記平面に実質的に垂直な固有異方性を含み、
前記参照層は、1つ又は複数の強磁性層と、合成反強磁性体とを備え、
前記センス層は、少なくとも2層の強磁性層と、前記少なくとも2層の強磁性層の間に1層の非磁性層とを備える複数層の構成を備え、
前記固有異方性には、150Oeを超える異方性磁場があり、
前記トンネル障壁層の厚さが1nmから3nmの間であり、前記磁気トンネル接合のトンネル磁気抵抗比が50%よりも高く、
前記センス層は、CoxFeyBz合金を含む強磁性層を備える、磁気センサセル。 - 前記センス層は、Co20Fe60B20を含む強磁性層を備える、請求項1に記載の磁気センサセル。
- 前記非磁性層は、Ta、W、Mo、Nb、Zr、Ti、MgO、Hfのこれらの元素のいずれか一つ又は組み合わせを含有する、請求項1に記載の磁気センサセル。
- 前記トンネル障壁層が含有する絶縁材料は、MgOであり、厚さは1nmである、請求項1に記載の磁気センサセル。
- 第1アレイ及び第2アレイの各アレイは複数の前記磁気トンネル接合を備え、前記第1アレイの磁気トンネル接合及び前記第2アレイの磁気トンネル接合は、互いに実質的に90°で整列された記憶磁化を有する、請求項1に記載の磁気センサセル。
- 請求項1に記載の磁気センサセルを用いる一次元及び二次元の外部磁場を感知する方法であって、前記センス磁化は、最初は前記センス層の前記平面に垂直に配向されていて、当該方法は、外部磁場内で移動しないように前記参照磁化を固定することと、
前記磁気センサセルを前記外部磁場に呈することと、
前記磁気センサセルの抵抗を測定することと
を備える方法。 - 前記抵抗は、前記センス層の前記平面に平行に向けられた前記センス磁化の成分に比例する、請求項6に記載の方法。
- 前記抵抗は、前記参照磁化の向きに対して前記センス層の前記平面に平行に向けられた前記センス磁化の成分の間の角度に比例する、請求項6に記載の方法。
- 第1アレイ及び第2アレイの各アレイは複数の前記磁気トンネル接合を備え、前記第1アレイの前記磁気トンネル接合と前記第2アレイの磁気トンネル接合は、互いに実質的に90°に整列した記憶磁化を有し、
当該方法が、前記第1アレイ及び前記第2アレイのそれぞれの前記抵抗を測定することにより、前記外部磁場の2つの面内直交成分を測定することを備える、請求項6に記載の方法。
Applications Claiming Priority (5)
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US15/481,805 | 2017-04-07 | ||
US15/481,805 US10663537B2 (en) | 2017-04-07 | 2017-04-07 | Magnetic sensor cell for measuring one- and two-dimensional magnetic fields and method for measuring said magnetic fields using the magnetic sensor cell |
EP17290053.2 | 2017-04-07 | ||
EP17290053.2A EP3385741B1 (en) | 2017-04-07 | 2017-04-07 | Magnetic sensor cell for measuring one- and two-dimensional magnetic fields and method for measuring said magnetic fields using the magnetic sensor cell |
PCT/IB2018/052111 WO2018185608A1 (en) | 2017-04-07 | 2018-03-28 | Magnetic sensor cell for measuring one- and two-dimensional magnetic fields and method for measuring said magnetic fields using the magnetic sensor cell |
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JP7359696B2 true JP7359696B2 (ja) | 2023-10-11 |
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WO2015033464A1 (ja) | 2013-09-09 | 2015-03-12 | 株式会社日立製作所 | 磁気センサ素子 |
US20160252591A1 (en) | 2013-10-11 | 2016-09-01 | Crocus Technology Sa | Method for measuring three-dimensional magnetic fields |
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US5729410A (en) * | 1996-11-27 | 1998-03-17 | International Business Machines Corporation | Magnetic tunnel junction device with longitudinal biasing |
US6822838B2 (en) * | 2002-04-02 | 2004-11-23 | International Business Machines Corporation | Dual magnetic tunnel junction sensor with a longitudinal bias stack |
US6947264B2 (en) * | 2002-12-06 | 2005-09-20 | International Business Machines Corporation | Self-pinned in-stack bias structure for magnetoresistive read heads |
US7199984B2 (en) | 2004-03-16 | 2007-04-03 | Hitachi Global Storage Technologies Netherlands B.V. | Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling |
JP2007266498A (ja) | 2006-03-29 | 2007-10-11 | Toshiba Corp | 磁気記録素子及び磁気メモリ |
WO2008020817A1 (en) | 2006-08-17 | 2008-02-21 | Agency For Science, Technology And Research | Read head and magnetic device comprising the same |
JP4738395B2 (ja) * | 2007-09-25 | 2011-08-03 | 株式会社東芝 | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
CN103987654A (zh) | 2011-10-19 | 2014-08-13 | 明尼苏达大学董事会 | 用于高吞吐量生物分子测试的磁性生物医学传感器和感测系统 |
WO2014025914A1 (en) | 2012-08-07 | 2014-02-13 | The Regents Of The University Of California | Magnetoresistance sensor with perpendicular anisotropy |
JP6225748B2 (ja) * | 2014-02-26 | 2017-11-08 | 株式会社デンソー | 磁気センサ |
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WO2015033464A1 (ja) | 2013-09-09 | 2015-03-12 | 株式会社日立製作所 | 磁気センサ素子 |
US20160252591A1 (en) | 2013-10-11 | 2016-09-01 | Crocus Technology Sa | Method for measuring three-dimensional magnetic fields |
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