JP2020516078A - 一次元及び二次元磁場を測定するための磁気センサセル及びその磁気センサセルを使用して磁場を測定する方法 - Google Patents
一次元及び二次元磁場を測定するための磁気センサセル及びその磁気センサセルを使用して磁場を測定する方法 Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 174
- 238000000034 method Methods 0.000 title claims description 13
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- 230000005294 ferromagnetic effect Effects 0.000 claims description 24
- 239000000956 alloy Substances 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 8
- 238000003491 array Methods 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 1
- 239000011572 manganese Substances 0.000 description 13
- 239000000395 magnesium oxide Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 230000005290 antiferromagnetic effect Effects 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 229910052748 manganese Inorganic materials 0.000 description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910019236 CoFeB Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910003321 CoFe Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910015136 FeMn Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910003289 NiMn Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000002885 antiferromagnetic material Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- -1 copper nitride Chemical class 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
Description
2 磁気トンネル接合
21 センス層
210 センス磁化
201′ センス磁化の面内成分
201″ センス磁化の面外成分
211 強磁性層
212 非磁性層
22 トンネル障壁層
23 参照層
230 参照磁化
24 反強磁性層
3 電流線
31 加熱電流
32 センス電流
4 磁場線
41 センス磁場電流
42 センス磁場
43 参照場電流
44 参照磁場
45 外部磁場
R 磁気トンネル接合の抵抗
Θ 角度
β 角度
Claims (15)
- 参照層(23)の面に実質的に平行に配向された参照磁化(230)を有する参照層(23)と、センス磁化(210)を有するセンス層(21)と、センス層及び参照層(21、23)の間のトンネル障壁層(22)とを備える磁気トンネル接合(2)と、
センス磁化(210)がセンス層(21)の平面に垂直な初期方向とセンス層(21)の平面に平行な方向との間で配向可能であるように、センス層(21)の平面に実質的に垂直な固有異方性を含むセンス層(21)と
を備える、磁気センサセル(1)において、
固有異方性には、150Oeを超える異方性磁場があり、
トンネル障壁層(22)の厚さが1nmから3nmの間であり、磁気トンネル接合(2)のトンネル磁気抵抗が50%よりも高いということ
を特徴とする、磁気センサセル。 - センス層(21)は、CoxFeyBz合金を含む強磁性層(211)を備える、請求項1に記載の磁気センサセル。
- センス層(21)では強磁性層はCo20Fe60B20を含む、請求項2に記載の磁気センサセル。
- 強磁性層(211)は、0.5nmと2nmの間の厚さを有する、請求項2又は3に記載の磁気センサセル。
- 強磁性層(211)は、1.5nmの厚さを有する、請求項4に記載の磁気センサセル。
- センス層(21)は、少なくとも強磁性層(211)及び非磁性層(212)を含む多層構成を備える、請求項2から5のいずれか一項に記載の磁気センサセル。
- 非磁性層(212)は、Ta、W、Mo、Nb、Zr、Ti、MgO、Hfのこれらの元素のいずれか一つ又は組み合わせを含有する、請求項6に記載の磁気センサセル。
- 非磁性層(212)は、0.1nmと0.4nmの間の厚さを有する、請求項6又は7に記載の磁気センサセル。
- 絶縁材料は、MgOであり、厚さは約1nmである、請求項1から8のいずれか一項に記載の磁気センサセル。
- 第1アレイ及び第2アレイの各アレイは複数の磁気トンネル接合(2)を備え、第1のアレイの磁気トンネル接合(2)及び第2のアレイの磁気トンネル接合(2)は、互いに実質的に90°で整列された記憶磁化(230)を有する、請求項1から9のいずれか一項に記載の磁気センサセル。
- 請求項1から10のいずれか一項に記載の磁気センサセル(1)を用いる一次元及び二次元の外部磁場(45)を感知する方法であって、センス磁化(210)は、最初はセンス層(21)の平面に垂直に配向されていて、当該方法は、
外部磁場(45)内で移動しないように参照磁化(230)を固定することと、
磁気センサセル(1)を外部磁場(45)に呈することと、
磁気センサセル(1)の抵抗(R)を測定することと
を備える方法。 - 抵抗(R)を測定することは、磁気トンネル接合(2)にセンス電流(32)を流すことによって実行される、請求項11に記載の方法。
- 抵抗(R)は、センス層(21)の平面に平行に向けられたセンス磁化(210)の成分(210′)に比例する、請求項11又は12に記載の方法。
- 抵抗(R)は、参照磁化(230)の向きに対してセンス層(21)の平面に平行に向けられたセンス磁化(210)の成分(210′)間の角度(β)に比例する、請求項11から13のいずれか一項に記載の方法。
- 第1アレイ及び第2アレイの各アレイは複数の磁気トンネル接合(2)を備え、第1のアレイの磁気トンネル接合(2)と第2のアレイの磁気トンネル接合(2)は、互いに実質的に90°に整列した記憶磁化(230)を有し、
当該方法が、第1及び第2のアレイのそれぞれの抵抗(R)を測定することにより、外部磁場(45)の2つの面内直交成分を測定することを備える、請求項11から14のいずれか一項に記載の方法。
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EP17290053.2A EP3385741B1 (en) | 2017-04-07 | 2017-04-07 | Magnetic sensor cell for measuring one- and two-dimensional magnetic fields and method for measuring said magnetic fields using the magnetic sensor cell |
US15/481,805 | 2017-04-07 | ||
EP17290053.2 | 2017-04-07 | ||
US15/481,805 US10663537B2 (en) | 2017-04-07 | 2017-04-07 | Magnetic sensor cell for measuring one- and two-dimensional magnetic fields and method for measuring said magnetic fields using the magnetic sensor cell |
PCT/IB2018/052111 WO2018185608A1 (en) | 2017-04-07 | 2018-03-28 | Magnetic sensor cell for measuring one- and two-dimensional magnetic fields and method for measuring said magnetic fields using the magnetic sensor cell |
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Citations (4)
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JP2009081216A (ja) * | 2007-09-25 | 2009-04-16 | Toshiba Corp | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
WO2015033464A1 (ja) * | 2013-09-09 | 2015-03-12 | 株式会社日立製作所 | 磁気センサ素子 |
JP2015162515A (ja) * | 2014-02-26 | 2015-09-07 | 株式会社デンソー | 磁気センサ |
US20160252591A1 (en) * | 2013-10-11 | 2016-09-01 | Crocus Technology Sa | Method for measuring three-dimensional magnetic fields |
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US5729410A (en) * | 1996-11-27 | 1998-03-17 | International Business Machines Corporation | Magnetic tunnel junction device with longitudinal biasing |
US6822838B2 (en) * | 2002-04-02 | 2004-11-23 | International Business Machines Corporation | Dual magnetic tunnel junction sensor with a longitudinal bias stack |
US6947264B2 (en) * | 2002-12-06 | 2005-09-20 | International Business Machines Corporation | Self-pinned in-stack bias structure for magnetoresistive read heads |
US7199984B2 (en) | 2004-03-16 | 2007-04-03 | Hitachi Global Storage Technologies Netherlands B.V. | Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling |
JP2007266498A (ja) | 2006-03-29 | 2007-10-11 | Toshiba Corp | 磁気記録素子及び磁気メモリ |
WO2008020817A1 (en) | 2006-08-17 | 2008-02-21 | Agency For Science, Technology And Research | Read head and magnetic device comprising the same |
WO2013059692A1 (en) | 2011-10-19 | 2013-04-25 | Regents Of The University Of Minnesota | Magnetic biomedical sensors and sensing system for high-throughput biomolecule testing |
WO2014025914A1 (en) | 2012-08-07 | 2014-02-13 | The Regents Of The University Of California | Magnetoresistance sensor with perpendicular anisotropy |
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JP2009081216A (ja) * | 2007-09-25 | 2009-04-16 | Toshiba Corp | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
WO2015033464A1 (ja) * | 2013-09-09 | 2015-03-12 | 株式会社日立製作所 | 磁気センサ素子 |
US20160252591A1 (en) * | 2013-10-11 | 2016-09-01 | Crocus Technology Sa | Method for measuring three-dimensional magnetic fields |
JP2015162515A (ja) * | 2014-02-26 | 2015-09-07 | 株式会社デンソー | 磁気センサ |
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