JPWO2022230292A5 - - Google Patents

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JPWO2022230292A5
JPWO2022230292A5 JP2023517065A JP2023517065A JPWO2022230292A5 JP WO2022230292 A5 JPWO2022230292 A5 JP WO2022230292A5 JP 2023517065 A JP2023517065 A JP 2023517065A JP 2023517065 A JP2023517065 A JP 2023517065A JP WO2022230292 A5 JPWO2022230292 A5 JP WO2022230292A5
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Japan
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substrate
pad electrodes
section
capacitance
capacitor
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JP2023517065A
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Japanese (ja)
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JPWO2022230292A1 (https=
JP7797491B2 (ja
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Priority claimed from PCT/JP2022/004901 external-priority patent/WO2022230292A1/ja
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JP2023517065A 2021-04-30 2022-02-08 固体撮像装置、電子機器および移動体 Active JP7797491B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021077975 2021-04-30
JP2021077975 2021-04-30
PCT/JP2022/004901 WO2022230292A1 (ja) 2021-04-30 2022-02-08 固体撮像装置、電子機器および移動体

Publications (3)

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JPWO2022230292A1 JPWO2022230292A1 (https=) 2022-11-03
JPWO2022230292A5 true JPWO2022230292A5 (https=) 2025-02-07
JP7797491B2 JP7797491B2 (ja) 2026-01-13

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JP2023517065A Active JP7797491B2 (ja) 2021-04-30 2022-02-08 固体撮像装置、電子機器および移動体

Country Status (5)

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US (1) US20240205565A1 (https=)
EP (1) EP4333422A4 (https=)
JP (1) JP7797491B2 (https=)
CN (1) CN117083873A (https=)
WO (1) WO2022230292A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024202675A1 (ja) * 2023-03-31 2024-10-03 ソニーセミコンダクタソリューションズ株式会社 測距装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5426069A (en) * 1992-04-09 1995-06-20 Dalsa Inc. Method for making silicon-germanium devices using germanium implantation
US5386128A (en) * 1994-01-21 1995-01-31 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output
JP4317115B2 (ja) * 2004-04-12 2009-08-19 国立大学法人東北大学 固体撮像装置、光センサおよび固体撮像装置の動作方法
US20090122173A1 (en) * 2007-11-13 2009-05-14 William Emerson Tennant Low noise readout apparatus and method for cmos image sensors
JP5028545B2 (ja) * 2012-01-16 2012-09-19 キヤノン株式会社 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
JP6176990B2 (ja) * 2013-04-25 2017-08-09 オリンパス株式会社 固体撮像装置および撮像装置
JP6780421B2 (ja) 2016-03-01 2020-11-04 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
JP6929643B2 (ja) 2016-12-27 2021-09-01 キヤノン株式会社 撮像装置および撮像システム
CN108878462B (zh) * 2017-05-12 2023-08-15 松下知识产权经营株式会社 摄像装置及照相机系统
JP7072362B2 (ja) * 2017-09-26 2022-05-20 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
US10893222B2 (en) * 2018-03-29 2021-01-12 Panasonic Intellectual Property Management Co., Ltd. Imaging device and camera system, and driving method of imaging device
KR102618358B1 (ko) * 2019-06-05 2023-12-28 삼성전자주식회사 이미지 센서
JP2021005656A (ja) * 2019-06-26 2021-01-14 ソニーセミコンダクタソリューションズ株式会社 半導体装置及びその製造方法
JP2021077975A (ja) 2019-11-07 2021-05-20 ソニー株式会社 無線端末、サーバおよび無線通信システム

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