JP2021034702A5 - - Google Patents

Download PDF

Info

Publication number
JP2021034702A5
JP2021034702A5 JP2019157290A JP2019157290A JP2021034702A5 JP 2021034702 A5 JP2021034702 A5 JP 2021034702A5 JP 2019157290 A JP2019157290 A JP 2019157290A JP 2019157290 A JP2019157290 A JP 2019157290A JP 2021034702 A5 JP2021034702 A5 JP 2021034702A5
Authority
JP
Japan
Prior art keywords
chip
substrate
semiconductor device
semiconductor
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2019157290A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021034702A (ja
JP7391574B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2019157290A priority Critical patent/JP7391574B2/ja
Priority claimed from JP2019157290A external-priority patent/JP7391574B2/ja
Priority to US17/002,189 priority patent/US11444055B2/en
Publication of JP2021034702A publication Critical patent/JP2021034702A/ja
Priority to US17/885,445 priority patent/US11948910B2/en
Publication of JP2021034702A5 publication Critical patent/JP2021034702A5/ja
Application granted granted Critical
Publication of JP7391574B2 publication Critical patent/JP7391574B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2019157290A 2019-08-29 2019-08-29 半導体装置の製造方法および半導体装置 Active JP7391574B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019157290A JP7391574B2 (ja) 2019-08-29 2019-08-29 半導体装置の製造方法および半導体装置
US17/002,189 US11444055B2 (en) 2019-08-29 2020-08-25 Manufacturing method of semiconductor apparatus and semiconductor apparatus
US17/885,445 US11948910B2 (en) 2019-08-29 2022-08-10 Manufacturing method of semiconductor apparatus and semiconductor apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019157290A JP7391574B2 (ja) 2019-08-29 2019-08-29 半導体装置の製造方法および半導体装置

Publications (3)

Publication Number Publication Date
JP2021034702A JP2021034702A (ja) 2021-03-01
JP2021034702A5 true JP2021034702A5 (https=) 2022-08-30
JP7391574B2 JP7391574B2 (ja) 2023-12-05

Family

ID=74676276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019157290A Active JP7391574B2 (ja) 2019-08-29 2019-08-29 半導体装置の製造方法および半導体装置

Country Status (2)

Country Link
US (2) US11444055B2 (https=)
JP (1) JP7391574B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12388039B2 (en) * 2022-04-11 2025-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. 3D IC comprising semiconductor substrates with different bandgaps

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536966A (ja) 1991-07-19 1993-02-12 Fujitsu Ltd 半導体装置
US6962835B2 (en) 2003-02-07 2005-11-08 Ziptronix, Inc. Method for room temperature metal direct bonding
CN102290425B (zh) 2004-08-20 2014-04-02 Kamiyacho知识产权控股公司 具有三维层叠结构的半导体器件的制造方法
JP5334411B2 (ja) 2007-12-30 2013-11-06 株式会社フジクラ 貼り合わせ基板および貼り合せ基板を用いた半導体装置の製造方法
JP2013065761A (ja) 2011-09-20 2013-04-11 Toshiba Corp 半導体装置の製造方法および半導体装置の製造装置
JP6212720B2 (ja) 2013-09-20 2017-10-18 パナソニックＩｐマネジメント株式会社 半導体装置及びその製造方法
JP6904017B2 (ja) 2017-04-06 2021-07-14 富士通株式会社 撮像素子及び撮像装置
WO2018193747A1 (en) 2017-04-19 2018-10-25 Sony Semiconductor Solutions Corporation Semiconductor device, method of manufacturing the same, and electronic apparatus
KR102467845B1 (ko) * 2017-10-24 2022-11-16 삼성전자주식회사 적층형 씨모스 이미지 센서
KR102823598B1 (ko) * 2019-06-26 2025-06-23 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치

Similar Documents

Publication Publication Date Title
US11177312B2 (en) Image sensor and image capture device
US10930697B2 (en) Semiconductor device, solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode
US9450009B2 (en) Solid-state imaging device and camera system
US10312173B2 (en) Packaged semiconductor components having substantially rigid support members and methods of packaging semiconductor components
CN108695349A (zh) 具有层压层的半导体装置和设备
CN102683359B (zh) 固体摄像装置、其制造方法、电子设备和半导体装置
TW201603256A (zh) 固態成像裝置，固態成像元件之製造方法及成像設備
CN110246852B (zh) 3d图像传感器
JP2015065479A5 (https=)
WO2017135244A1 (ja) 撮像素子の製造方法、撮像素子、および撮像装置
CN109360833A (zh) 半导体装置、半导体装置的制造方法和电子装置
CN103413815A (zh) 晶圆级图像传感器封装结构和晶圆级图像传感器封装方法
JP2021034702A5 (https=)
CN110299375B (zh) 半导体结构及其形成方法
EP3485514A1 (en) Detector module, detector, imaging apparatus and method of manufacturing a detector module
WO2005031871A1 (ja) 半導体装置
JP2012173156A (ja) 赤外線センサモジュール
CN101593733B (zh) 封装结构
JP2016006840A5 (https=)
JP2016162781A (ja) 撮像素子、撮像装置、および撮像素子の製造方法
JPWO2019017147A1 (ja) 撮像装置および撮像装置の製造方法
WO2025263182A1 (ja) 光検出素子
TWI221034B (en) Image sensing chip having photosensitive layer and its manufacturing method
JP5629146B2 (ja) 温度センサ
JPH04127472A (ja) 光検知器