JP7391574B2 - 半導体装置の製造方法および半導体装置 - Google Patents

半導体装置の製造方法および半導体装置 Download PDF

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JP7391574B2
JP7391574B2 JP2019157290A JP2019157290A JP7391574B2 JP 7391574 B2 JP7391574 B2 JP 7391574B2 JP 2019157290 A JP2019157290 A JP 2019157290A JP 2019157290 A JP2019157290 A JP 2019157290A JP 7391574 B2 JP7391574 B2 JP 7391574B2
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chip
substrate
semiconductor device
semiconductor
manufacturing
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JP2021034702A5 (https=
JP2021034702A (ja
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信一郎 渡辺
庸一 深谷
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Canon Inc
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Canon Inc
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Priority to US17/002,189 priority patent/US11444055B2/en
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Priority to US17/885,445 priority patent/US11948910B2/en
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JP2019157290A 2019-08-29 2019-08-29 半導体装置の製造方法および半導体装置 Active JP7391574B2 (ja)

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JP2019157290A JP7391574B2 (ja) 2019-08-29 2019-08-29 半導体装置の製造方法および半導体装置
US17/002,189 US11444055B2 (en) 2019-08-29 2020-08-25 Manufacturing method of semiconductor apparatus and semiconductor apparatus
US17/885,445 US11948910B2 (en) 2019-08-29 2022-08-10 Manufacturing method of semiconductor apparatus and semiconductor apparatus

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US12388039B2 (en) * 2022-04-11 2025-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. 3D IC comprising semiconductor substrates with different bandgaps

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JP2009164314A (ja) 2007-12-30 2009-07-23 Fujikura Ltd 貼り合わせ基板および貼り合せ基板を用いた半導体装置の製造方法
JP2013065761A (ja) 2011-09-20 2013-04-11 Toshiba Corp 半導体装置の製造方法および半導体装置の製造装置
WO2015040798A1 (ja) 2013-09-20 2015-03-26 パナソニックＩｐマネジメント株式会社 半導体装置及びその製造方法
WO2018194030A1 (ja) 2017-04-19 2018-10-25 ソニーセミコンダクタソリューションズ株式会社 半導体素子およびその製造方法、並びに電子機器

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JP6904017B2 (ja) 2017-04-06 2021-07-14 富士通株式会社 撮像素子及び撮像装置
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KR102823598B1 (ko) * 2019-06-26 2025-06-23 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치

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JP2006517344A (ja) 2003-02-07 2006-07-20 ジプトロニクス・インコーポレイテッド 室温金属直接ボンディング
JP2009164314A (ja) 2007-12-30 2009-07-23 Fujikura Ltd 貼り合わせ基板および貼り合せ基板を用いた半導体装置の製造方法
JP2013065761A (ja) 2011-09-20 2013-04-11 Toshiba Corp 半導体装置の製造方法および半導体装置の製造装置
WO2015040798A1 (ja) 2013-09-20 2015-03-26 パナソニックＩｐマネジメント株式会社 半導体装置及びその製造方法
WO2018194030A1 (ja) 2017-04-19 2018-10-25 ソニーセミコンダクタソリューションズ株式会社 半導体素子およびその製造方法、並びに電子機器

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