JP7797491B2 - 固体撮像装置、電子機器および移動体 - Google Patents

固体撮像装置、電子機器および移動体

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Publication number
JP7797491B2
JP7797491B2 JP2023517065A JP2023517065A JP7797491B2 JP 7797491 B2 JP7797491 B2 JP 7797491B2 JP 2023517065 A JP2023517065 A JP 2023517065A JP 2023517065 A JP2023517065 A JP 2023517065A JP 7797491 B2 JP7797491 B2 JP 7797491B2
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Japan
Prior art keywords
capacitance
substrate
unit
floating diffusion
solid
Prior art date
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JP2023517065A
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English (en)
Japanese (ja)
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JPWO2022230292A1 (https=
JPWO2022230292A5 (https=
Inventor
泰一郎 渡部
史彦 古閑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Publication of JPWO2022230292A5 publication Critical patent/JPWO2022230292A5/ja
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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/021—Manufacture or treatment of image sensors covered by group H10F39/12 of image sensors having active layers comprising only Group III-V materials, e.g. GaAs, AlGaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2023517065A 2021-04-30 2022-02-08 固体撮像装置、電子機器および移動体 Active JP7797491B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021077975 2021-04-30
JP2021077975 2021-04-30
PCT/JP2022/004901 WO2022230292A1 (ja) 2021-04-30 2022-02-08 固体撮像装置、電子機器および移動体

Publications (3)

Publication Number Publication Date
JPWO2022230292A1 JPWO2022230292A1 (https=) 2022-11-03
JPWO2022230292A5 JPWO2022230292A5 (https=) 2025-02-07
JP7797491B2 true JP7797491B2 (ja) 2026-01-13

Family

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JP2023517065A Active JP7797491B2 (ja) 2021-04-30 2022-02-08 固体撮像装置、電子機器および移動体

Country Status (5)

Country Link
US (1) US20240205565A1 (https=)
EP (1) EP4333422A4 (https=)
JP (1) JP7797491B2 (https=)
CN (1) CN117083873A (https=)
WO (1) WO2022230292A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024202675A1 (ja) * 2023-03-31 2024-10-03 ソニーセミコンダクタソリューションズ株式会社 測距装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005328493A (ja) 2004-04-12 2005-11-24 Shigetoshi Sugawa 固体撮像装置、光センサおよび固体撮像装置の動作方法
JP2012134987A (ja) 2012-01-16 2012-07-12 Canon Inc 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
JP2021005656A (ja) 2019-06-26 2021-01-14 ソニーセミコンダクタソリューションズ株式会社 半導体装置及びその製造方法

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US5426069A (en) * 1992-04-09 1995-06-20 Dalsa Inc. Method for making silicon-germanium devices using germanium implantation
US5386128A (en) * 1994-01-21 1995-01-31 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output
US20090122173A1 (en) * 2007-11-13 2009-05-14 William Emerson Tennant Low noise readout apparatus and method for cmos image sensors
JP6176990B2 (ja) * 2013-04-25 2017-08-09 オリンパス株式会社 固体撮像装置および撮像装置
JP6780421B2 (ja) 2016-03-01 2020-11-04 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
JP6929643B2 (ja) 2016-12-27 2021-09-01 キヤノン株式会社 撮像装置および撮像システム
CN108878462B (zh) * 2017-05-12 2023-08-15 松下知识产权经营株式会社 摄像装置及照相机系统
JP7072362B2 (ja) * 2017-09-26 2022-05-20 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
US10893222B2 (en) * 2018-03-29 2021-01-12 Panasonic Intellectual Property Management Co., Ltd. Imaging device and camera system, and driving method of imaging device
KR102618358B1 (ko) * 2019-06-05 2023-12-28 삼성전자주식회사 이미지 센서
JP2021077975A (ja) 2019-11-07 2021-05-20 ソニー株式会社 無線端末、サーバおよび無線通信システム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005328493A (ja) 2004-04-12 2005-11-24 Shigetoshi Sugawa 固体撮像装置、光センサおよび固体撮像装置の動作方法
JP2012134987A (ja) 2012-01-16 2012-07-12 Canon Inc 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
JP2021005656A (ja) 2019-06-26 2021-01-14 ソニーセミコンダクタソリューションズ株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
WO2022230292A1 (ja) 2022-11-03
EP4333422A1 (en) 2024-03-06
EP4333422A4 (en) 2024-10-23
CN117083873A (zh) 2023-11-17
JPWO2022230292A1 (https=) 2022-11-03
US20240205565A1 (en) 2024-06-20

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