JPWO2022230292A1 - - Google Patents
Info
- Publication number
- JPWO2022230292A1 JPWO2022230292A1 JP2023517065A JP2023517065A JPWO2022230292A1 JP WO2022230292 A1 JPWO2022230292 A1 JP WO2022230292A1 JP 2023517065 A JP2023517065 A JP 2023517065A JP 2023517065 A JP2023517065 A JP 2023517065A JP WO2022230292 A1 JPWO2022230292 A1 JP WO2022230292A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/021—Manufacture or treatment of image sensors covered by group H10F39/12 of image sensors having active layers comprising only Group III-V materials, e.g. GaAs, AlGaAs or InP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021077975 | 2021-04-30 | ||
| JP2021077975 | 2021-04-30 | ||
| PCT/JP2022/004901 WO2022230292A1 (ja) | 2021-04-30 | 2022-02-08 | 固体撮像装置、電子機器および移動体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022230292A1 true JPWO2022230292A1 (https=) | 2022-11-03 |
| JPWO2022230292A5 JPWO2022230292A5 (https=) | 2025-02-07 |
| JP7797491B2 JP7797491B2 (ja) | 2026-01-13 |
Family
ID=83848271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023517065A Active JP7797491B2 (ja) | 2021-04-30 | 2022-02-08 | 固体撮像装置、電子機器および移動体 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240205565A1 (https=) |
| EP (1) | EP4333422A4 (https=) |
| JP (1) | JP7797491B2 (https=) |
| CN (1) | CN117083873A (https=) |
| WO (1) | WO2022230292A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024202675A1 (ja) * | 2023-03-31 | 2024-10-03 | ソニーセミコンダクタソリューションズ株式会社 | 測距装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005328493A (ja) * | 2004-04-12 | 2005-11-24 | Shigetoshi Sugawa | 固体撮像装置、光センサおよび固体撮像装置の動作方法 |
| JP2012134987A (ja) * | 2012-01-16 | 2012-07-12 | Canon Inc | 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム |
| JP2021005656A (ja) * | 2019-06-26 | 2021-01-14 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5426069A (en) * | 1992-04-09 | 1995-06-20 | Dalsa Inc. | Method for making silicon-germanium devices using germanium implantation |
| US5386128A (en) * | 1994-01-21 | 1995-01-31 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output |
| US20090122173A1 (en) * | 2007-11-13 | 2009-05-14 | William Emerson Tennant | Low noise readout apparatus and method for cmos image sensors |
| JP6176990B2 (ja) * | 2013-04-25 | 2017-08-09 | オリンパス株式会社 | 固体撮像装置および撮像装置 |
| JP6780421B2 (ja) | 2016-03-01 | 2020-11-04 | ソニー株式会社 | 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法 |
| JP6929643B2 (ja) | 2016-12-27 | 2021-09-01 | キヤノン株式会社 | 撮像装置および撮像システム |
| CN108878462B (zh) * | 2017-05-12 | 2023-08-15 | 松下知识产权经营株式会社 | 摄像装置及照相机系统 |
| JP7072362B2 (ja) * | 2017-09-26 | 2022-05-20 | ブリルニクス シンガポール プライベート リミテッド | 固体撮像装置、固体撮像装置の駆動方法、および電子機器 |
| US10893222B2 (en) * | 2018-03-29 | 2021-01-12 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device and camera system, and driving method of imaging device |
| KR102618358B1 (ko) * | 2019-06-05 | 2023-12-28 | 삼성전자주식회사 | 이미지 센서 |
| JP2021077975A (ja) | 2019-11-07 | 2021-05-20 | ソニー株式会社 | 無線端末、サーバおよび無線通信システム |
-
2022
- 2022-02-08 EP EP22795215.7A patent/EP4333422A4/en active Pending
- 2022-02-08 CN CN202280020903.9A patent/CN117083873A/zh active Pending
- 2022-02-08 US US18/286,171 patent/US20240205565A1/en active Pending
- 2022-02-08 JP JP2023517065A patent/JP7797491B2/ja active Active
- 2022-02-08 WO PCT/JP2022/004901 patent/WO2022230292A1/ja not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005328493A (ja) * | 2004-04-12 | 2005-11-24 | Shigetoshi Sugawa | 固体撮像装置、光センサおよび固体撮像装置の動作方法 |
| JP2012134987A (ja) * | 2012-01-16 | 2012-07-12 | Canon Inc | 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム |
| JP2021005656A (ja) * | 2019-06-26 | 2021-01-14 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022230292A1 (ja) | 2022-11-03 |
| EP4333422A1 (en) | 2024-03-06 |
| EP4333422A4 (en) | 2024-10-23 |
| CN117083873A (zh) | 2023-11-17 |
| JP7797491B2 (ja) | 2026-01-13 |
| US20240205565A1 (en) | 2024-06-20 |
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