JPWO2022230118A5 - - Google Patents
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- Publication number
- JPWO2022230118A5 JPWO2022230118A5 JP2023514954A JP2023514954A JPWO2022230118A5 JP WO2022230118 A5 JPWO2022230118 A5 JP WO2022230118A5 JP 2023514954 A JP2023514954 A JP 2023514954A JP 2023514954 A JP2023514954 A JP 2023514954A JP WO2022230118 A5 JPWO2022230118 A5 JP WO2022230118A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etching method
- silicon
- flow rate
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 34
- 238000005530 etching Methods 0.000 claims description 30
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 7
- 239000010703 silicon Substances 0.000 claims 7
- 239000000460 chlorine Substances 0.000 claims 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 3
- 229910052801 chlorine Inorganic materials 0.000 claims 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 2
- 150000001412 amines Chemical class 0.000 claims 2
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 150000002367 halogens Chemical class 0.000 claims 2
- 229910052740 iodine Inorganic materials 0.000 claims 2
- 239000011630 iodine Substances 0.000 claims 2
- 229910015844 BCl3 Inorganic materials 0.000 claims 1
- 229910014263 BrF3 Inorganic materials 0.000 claims 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims 1
- 229910020323 ClF3 Inorganic materials 0.000 claims 1
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims 1
- FQFKTKUFHWNTBN-UHFFFAOYSA-N trifluoro-$l^{3}-bromane Chemical compound FBr(F)F FQFKTKUFHWNTBN-UHFFFAOYSA-N 0.000 claims 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023041775A JP7639042B2 (ja) | 2021-04-28 | 2023-03-16 | エッチング方法及びプラズマ処理装置 |
| JP2025024843A JP2025068048A (ja) | 2021-04-28 | 2025-02-19 | エッチング方法及びプラズマ処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/017012 WO2022230118A1 (ja) | 2021-04-28 | 2021-04-28 | エッチング方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023041775A Division JP7639042B2 (ja) | 2021-04-28 | 2023-03-16 | エッチング方法及びプラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022230118A1 JPWO2022230118A1 (https=) | 2022-11-03 |
| JPWO2022230118A5 true JPWO2022230118A5 (https=) | 2023-04-28 |
| JP7336623B2 JP7336623B2 (ja) | 2023-08-31 |
Family
ID=83848133
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023514954A Active JP7336623B2 (ja) | 2021-04-28 | 2021-04-28 | エッチング方法 |
| JP2023041775A Active JP7639042B2 (ja) | 2021-04-28 | 2023-03-16 | エッチング方法及びプラズマ処理装置 |
| JP2025024843A Pending JP2025068048A (ja) | 2021-04-28 | 2025-02-19 | エッチング方法及びプラズマ処理装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023041775A Active JP7639042B2 (ja) | 2021-04-28 | 2023-03-16 | エッチング方法及びプラズマ処理装置 |
| JP2025024843A Pending JP2025068048A (ja) | 2021-04-28 | 2025-02-19 | エッチング方法及びプラズマ処理装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20230268191A1 (https=) |
| JP (3) | JP7336623B2 (https=) |
| KR (2) | KR102737019B1 (https=) |
| CN (1) | CN116034454A (https=) |
| TW (2) | TWI890783B (https=) |
| WO (1) | WO2022230118A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7773971B2 (ja) * | 2022-12-27 | 2025-11-20 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| WO2024171666A1 (ja) * | 2023-02-13 | 2024-08-22 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| CN120642031A (zh) * | 2023-02-13 | 2025-09-12 | 东京毅力科创株式会社 | 蚀刻方法和等离子体处理装置 |
| JP7836946B2 (ja) * | 2023-09-28 | 2026-03-27 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US20250293042A1 (en) * | 2024-03-15 | 2025-09-18 | Tokyo Electron Limited | Harc etch chemistry for seminconductors |
| WO2026035547A1 (en) * | 2024-08-05 | 2026-02-12 | Lam Research Corporation | High aspect ratio feature etching by multi-state pulsing |
| WO2026035464A1 (en) * | 2024-08-06 | 2026-02-12 | Lam Research Corporation | Selective etch with respect to carbon mask to provide local cd uniformity |
| JP7751768B1 (ja) * | 2025-03-21 | 2025-10-08 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60110122A (ja) * | 1983-11-18 | 1985-06-15 | Semiconductor Energy Lab Co Ltd | 半導体エッチング方法 |
| JPS61224325A (ja) * | 1985-03-28 | 1986-10-06 | Toshiba Corp | コンタクト孔の形成方法 |
| JPS6230330A (ja) * | 1985-07-31 | 1987-02-09 | Toshiba Corp | ドライエツチング方法 |
| US5126169A (en) * | 1986-08-28 | 1992-06-30 | Canon Kabushiki Kaisha | Process for forming a deposited film from two mutually reactive active species |
| JPH08181116A (ja) * | 1994-12-26 | 1996-07-12 | Mitsubishi Electric Corp | ドライエッチング方法及びドライエッチング装置 |
| KR0179281B1 (ko) * | 1996-02-28 | 1999-10-01 | 문정환 | 챔버를 갖는 베이퍼-에치 장치의 에치-종말점 측정방법 |
| US6074954A (en) * | 1998-08-31 | 2000-06-13 | Applied Materials, Inc | Process for control of the shape of the etch front in the etching of polysilicon |
| US20090286402A1 (en) * | 2008-05-13 | 2009-11-19 | Applied Materials, Inc | Method for critical dimension shrink using conformal pecvd films |
| JP2009277890A (ja) | 2008-05-15 | 2009-11-26 | Sekisui Chem Co Ltd | エッチング方法及び装置 |
| TWI390582B (zh) * | 2008-07-16 | 2013-03-21 | 住友重機械工業股份有限公司 | Plasma processing device and plasma processing method |
| US8809195B2 (en) * | 2008-10-20 | 2014-08-19 | Asm America, Inc. | Etching high-k materials |
| US9580809B2 (en) * | 2014-01-16 | 2017-02-28 | The United States Of America, As Represented By The Secretary Of Commerce | Article with gradient property and processes for selective etching |
| JP2016012609A (ja) * | 2014-06-27 | 2016-01-21 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6423643B2 (ja) | 2014-08-08 | 2018-11-14 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
| JP6613207B2 (ja) * | 2015-11-13 | 2019-11-27 | 東京エレクトロン株式会社 | 被処理体をエッチングする方法 |
| KR101874821B1 (ko) * | 2016-04-05 | 2018-07-06 | 주식회사 테스 | 저온 공정을 이용한 실리콘산화막의 선택적 식각 방법 |
| JP6689159B2 (ja) * | 2016-08-22 | 2020-04-28 | 東京エレクトロン株式会社 | エッチング方法およびｄｒａｍキャパシタの製造方法 |
| JP7109165B2 (ja) * | 2017-05-30 | 2022-07-29 | 東京エレクトロン株式会社 | エッチング方法 |
| KR102741055B1 (ko) * | 2018-02-15 | 2024-12-10 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 에칭 방법 및 플라즈마 에칭 장치 |
| JP7366918B2 (ja) * | 2018-03-16 | 2023-10-23 | ラム リサーチ コーポレーション | 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質 |
| US11270889B2 (en) * | 2018-06-04 | 2022-03-08 | Tokyo Electron Limited | Etching method and etching apparatus |
| KR102904251B1 (ko) * | 2019-02-18 | 2025-12-24 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
| WO2021090798A1 (ja) * | 2019-11-08 | 2021-05-14 | 東京エレクトロン株式会社 | エッチング方法 |
| US11456180B2 (en) * | 2019-11-08 | 2022-09-27 | Tokyo Electron Limited | Etching method |
| JP7604145B2 (ja) * | 2019-11-25 | 2024-12-23 | 東京エレクトロン株式会社 | 基板処理方法及びプラズマ処理装置 |
| US11342194B2 (en) * | 2019-11-25 | 2022-05-24 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
| KR102459129B1 (ko) * | 2020-04-30 | 2022-10-26 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 및 플라즈마 처리 장치 |
| WO2022234640A1 (ja) * | 2021-05-07 | 2022-11-10 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
-
2021
- 2021-04-28 CN CN202180054563.7A patent/CN116034454A/zh active Pending
- 2021-04-28 WO PCT/JP2021/017012 patent/WO2022230118A1/ja not_active Ceased
- 2021-04-28 JP JP2023514954A patent/JP7336623B2/ja active Active
- 2021-04-28 KR KR1020237007617A patent/KR102737019B1/ko active Active
- 2021-04-28 KR KR1020247039533A patent/KR20250005413A/ko active Pending
- 2021-05-04 TW TW110116004A patent/TWI890783B/zh active
- 2021-05-04 TW TW114123571A patent/TW202538867A/zh unknown
-
2023
- 2023-03-16 JP JP2023041775A patent/JP7639042B2/ja active Active
- 2023-04-28 US US18/140,694 patent/US20230268191A1/en active Pending
-
2025
- 2025-02-19 JP JP2025024843A patent/JP2025068048A/ja active Pending
- 2025-06-23 US US19/245,988 patent/US20250323055A1/en active Pending
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