JPWO2022230118A1 - - Google Patents
Info
- Publication number
- JPWO2022230118A1 JPWO2022230118A1 JP2023514954A JP2023514954A JPWO2022230118A1 JP WO2022230118 A1 JPWO2022230118 A1 JP WO2022230118A1 JP 2023514954 A JP2023514954 A JP 2023514954A JP 2023514954 A JP2023514954 A JP 2023514954A JP WO2022230118 A1 JPWO2022230118 A1 JP WO2022230118A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
- H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023041775A JP7639042B2 (ja) | 2021-04-28 | 2023-03-16 | エッチング方法及びプラズマ処理装置 |
| JP2025024843A JP2025068048A (ja) | 2021-04-28 | 2025-02-19 | エッチング方法及びプラズマ処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/017012 WO2022230118A1 (ja) | 2021-04-28 | 2021-04-28 | エッチング方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023041775A Division JP7639042B2 (ja) | 2021-04-28 | 2023-03-16 | エッチング方法及びプラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022230118A1 true JPWO2022230118A1 (https=) | 2022-11-03 |
| JPWO2022230118A5 JPWO2022230118A5 (https=) | 2023-04-28 |
| JP7336623B2 JP7336623B2 (ja) | 2023-08-31 |
Family
ID=83848133
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023514954A Active JP7336623B2 (ja) | 2021-04-28 | 2021-04-28 | エッチング方法 |
| JP2023041775A Active JP7639042B2 (ja) | 2021-04-28 | 2023-03-16 | エッチング方法及びプラズマ処理装置 |
| JP2025024843A Pending JP2025068048A (ja) | 2021-04-28 | 2025-02-19 | エッチング方法及びプラズマ処理装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023041775A Active JP7639042B2 (ja) | 2021-04-28 | 2023-03-16 | エッチング方法及びプラズマ処理装置 |
| JP2025024843A Pending JP2025068048A (ja) | 2021-04-28 | 2025-02-19 | エッチング方法及びプラズマ処理装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20230268191A1 (https=) |
| JP (3) | JP7336623B2 (https=) |
| KR (2) | KR20250005413A (https=) |
| CN (1) | CN116034454A (https=) |
| TW (2) | TWI890783B (https=) |
| WO (1) | WO2022230118A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7773971B2 (ja) * | 2022-12-27 | 2025-11-20 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| WO2024171669A1 (ja) * | 2023-02-13 | 2024-08-22 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| WO2024171666A1 (ja) * | 2023-02-13 | 2024-08-22 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| JP7836946B2 (ja) * | 2023-09-28 | 2026-03-27 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US20250293042A1 (en) * | 2024-03-15 | 2025-09-18 | Tokyo Electron Limited | Harc etch chemistry for seminconductors |
| WO2026035547A1 (en) * | 2024-08-05 | 2026-02-12 | Lam Research Corporation | High aspect ratio feature etching by multi-state pulsing |
| WO2026035464A1 (en) * | 2024-08-06 | 2026-02-12 | Lam Research Corporation | Selective etch with respect to carbon mask to provide local cd uniformity |
| JP7751768B1 (ja) * | 2025-03-21 | 2025-10-08 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60110122A (ja) * | 1983-11-18 | 1985-06-15 | Semiconductor Energy Lab Co Ltd | 半導体エッチング方法 |
| JP2002524851A (ja) * | 1998-08-31 | 2002-08-06 | アプライド マテリアルズ インコーポレイテッド | ポリシリコンをバックエッチングするプロセス及びトレンチキャパシタの製造への応用 |
| JP2009277890A (ja) * | 2008-05-15 | 2009-11-26 | Sekisui Chem Co Ltd | エッチング方法及び装置 |
| WO2018037739A1 (ja) * | 2016-08-22 | 2018-03-01 | 東京エレクトロン株式会社 | エッチング方法およびｄｒａｍキャパシタの製造方法 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61224325A (ja) * | 1985-03-28 | 1986-10-06 | Toshiba Corp | コンタクト孔の形成方法 |
| JPS6230330A (ja) * | 1985-07-31 | 1987-02-09 | Toshiba Corp | ドライエツチング方法 |
| US5126169A (en) * | 1986-08-28 | 1992-06-30 | Canon Kabushiki Kaisha | Process for forming a deposited film from two mutually reactive active species |
| JPH08181116A (ja) * | 1994-12-26 | 1996-07-12 | Mitsubishi Electric Corp | ドライエッチング方法及びドライエッチング装置 |
| KR0179281B1 (ko) * | 1996-02-28 | 1999-10-01 | 문정환 | 챔버를 갖는 베이퍼-에치 장치의 에치-종말점 측정방법 |
| US20070246161A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with a toroidal plasma source and a VHF capacitively coupled plasma source with variable frequency |
| US8235001B2 (en) * | 2007-04-02 | 2012-08-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
| US20090286402A1 (en) * | 2008-05-13 | 2009-11-19 | Applied Materials, Inc | Method for critical dimension shrink using conformal pecvd films |
| TWI390582B (zh) * | 2008-07-16 | 2013-03-21 | 住友重機械工業股份有限公司 | Plasma processing device and plasma processing method |
| US8809195B2 (en) * | 2008-10-20 | 2014-08-19 | Asm America, Inc. | Etching high-k materials |
| US9809882B2 (en) * | 2014-01-16 | 2017-11-07 | The United States Of America, As Represented By The Secretary Of Commerce | Article and process for selective deposition |
| JP2016012609A (ja) * | 2014-06-27 | 2016-01-21 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6423643B2 (ja) | 2014-08-08 | 2018-11-14 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
| JP6613207B2 (ja) * | 2015-11-13 | 2019-11-27 | 東京エレクトロン株式会社 | 被処理体をエッチングする方法 |
| KR101874821B1 (ko) * | 2016-04-05 | 2018-07-06 | 주식회사 테스 | 저온 공정을 이용한 실리콘산화막의 선택적 식각 방법 |
| JP7109165B2 (ja) * | 2017-05-30 | 2022-07-29 | 東京エレクトロン株式会社 | エッチング方法 |
| US10811275B2 (en) * | 2018-02-15 | 2020-10-20 | Tokyo Electron Limited | Plasma etching method and plasma etching apparatus |
| CN118588548A (zh) * | 2018-03-16 | 2024-09-03 | 朗姆研究公司 | 在电介质中的高深宽比特征的等离子体蚀刻化学过程 |
| US11270889B2 (en) * | 2018-06-04 | 2022-03-08 | Tokyo Electron Limited | Etching method and etching apparatus |
| KR102904251B1 (ko) * | 2019-02-18 | 2025-12-24 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
| US11456180B2 (en) * | 2019-11-08 | 2022-09-27 | Tokyo Electron Limited | Etching method |
| KR102723916B1 (ko) * | 2019-11-08 | 2024-10-31 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
| US11361976B2 (en) * | 2019-11-25 | 2022-06-14 | Tokyo Electron Limited | Substrate processing method and plasma processing apparatus |
| JP7604145B2 (ja) * | 2019-11-25 | 2024-12-23 | 東京エレクトロン株式会社 | 基板処理方法及びプラズマ処理装置 |
| KR102459129B1 (ko) * | 2020-04-30 | 2022-10-26 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 및 플라즈마 처리 장치 |
| JP7679463B2 (ja) * | 2021-05-07 | 2025-05-19 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
-
2021
- 2021-04-28 WO PCT/JP2021/017012 patent/WO2022230118A1/ja not_active Ceased
- 2021-04-28 KR KR1020247039533A patent/KR20250005413A/ko active Pending
- 2021-04-28 KR KR1020237007617A patent/KR102737019B1/ko active Active
- 2021-04-28 JP JP2023514954A patent/JP7336623B2/ja active Active
- 2021-04-28 CN CN202180054563.7A patent/CN116034454A/zh active Pending
- 2021-05-04 TW TW110116004A patent/TWI890783B/zh active
- 2021-05-04 TW TW114123571A patent/TW202538867A/zh unknown
-
2023
- 2023-03-16 JP JP2023041775A patent/JP7639042B2/ja active Active
- 2023-04-28 US US18/140,694 patent/US20230268191A1/en active Pending
-
2025
- 2025-02-19 JP JP2025024843A patent/JP2025068048A/ja active Pending
- 2025-06-23 US US19/245,988 patent/US20250323055A1/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60110122A (ja) * | 1983-11-18 | 1985-06-15 | Semiconductor Energy Lab Co Ltd | 半導体エッチング方法 |
| JP2002524851A (ja) * | 1998-08-31 | 2002-08-06 | アプライド マテリアルズ インコーポレイテッド | ポリシリコンをバックエッチングするプロセス及びトレンチキャパシタの製造への応用 |
| JP2009277890A (ja) * | 2008-05-15 | 2009-11-26 | Sekisui Chem Co Ltd | エッチング方法及び装置 |
| WO2018037739A1 (ja) * | 2016-08-22 | 2018-03-01 | 東京エレクトロン株式会社 | エッチング方法およびｄｒａｍキャパシタの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202538867A (zh) | 2025-10-01 |
| JP2025068048A (ja) | 2025-04-24 |
| TWI890783B (zh) | 2025-07-21 |
| KR20230137285A (ko) | 2023-10-04 |
| JP7336623B2 (ja) | 2023-08-31 |
| JP2023063526A (ja) | 2023-05-09 |
| WO2022230118A1 (ja) | 2022-11-03 |
| TW202242995A (zh) | 2022-11-01 |
| KR20250005413A (ko) | 2025-01-09 |
| US20230268191A1 (en) | 2023-08-24 |
| CN116034454A (zh) | 2023-04-28 |
| KR102737019B9 (ko) | 2025-06-05 |
| US20250323055A1 (en) | 2025-10-16 |
| JP7639042B2 (ja) | 2025-03-04 |
| KR102737019B1 (ko) | 2024-12-03 |
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