TWI890783B - 蝕刻方法 - Google Patents

蝕刻方法

Info

Publication number
TWI890783B
TWI890783B TW110116004A TW110116004A TWI890783B TW I890783 B TWI890783 B TW I890783B TW 110116004 A TW110116004 A TW 110116004A TW 110116004 A TW110116004 A TW 110116004A TW I890783 B TWI890783 B TW I890783B
Authority
TW
Taiwan
Prior art keywords
gas
film
etching method
etching
silicon
Prior art date
Application number
TW110116004A
Other languages
English (en)
Chinese (zh)
Other versions
TW202242995A (zh
Inventor
戸村幕樹
大類貴俊
熊谷圭恵
須田隆太郎
大内田聡
若生悠輔
木原嘉英
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=83848133&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI890783(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202242995A publication Critical patent/TW202242995A/zh
Application granted granted Critical
Publication of TWI890783B publication Critical patent/TWI890783B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
TW110116004A 2021-04-28 2021-05-04 蝕刻方法 TWI890783B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2021/017012 2021-04-28
PCT/JP2021/017012 WO2022230118A1 (ja) 2021-04-28 2021-04-28 エッチング方法

Publications (2)

Publication Number Publication Date
TW202242995A TW202242995A (zh) 2022-11-01
TWI890783B true TWI890783B (zh) 2025-07-21

Family

ID=83848133

Family Applications (2)

Application Number Title Priority Date Filing Date
TW110116004A TWI890783B (zh) 2021-04-28 2021-05-04 蝕刻方法
TW114123571A TW202538867A (zh) 2021-04-28 2021-05-04 蝕刻方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW114123571A TW202538867A (zh) 2021-04-28 2021-05-04 蝕刻方法

Country Status (6)

Country Link
US (2) US20230268191A1 (https=)
JP (3) JP7336623B2 (https=)
KR (2) KR102737019B1 (https=)
CN (1) CN116034454A (https=)
TW (2) TWI890783B (https=)
WO (1) WO2022230118A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7773971B2 (ja) * 2022-12-27 2025-11-20 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
WO2024171666A1 (ja) * 2023-02-13 2024-08-22 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
CN120642031A (zh) * 2023-02-13 2025-09-12 东京毅力科创株式会社 蚀刻方法和等离子体处理装置
JP7836946B2 (ja) * 2023-09-28 2026-03-27 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US20250293042A1 (en) * 2024-03-15 2025-09-18 Tokyo Electron Limited Harc etch chemistry for seminconductors
WO2026035547A1 (en) * 2024-08-05 2026-02-12 Lam Research Corporation High aspect ratio feature etching by multi-state pulsing
WO2026035464A1 (en) * 2024-08-06 2026-02-12 Lam Research Corporation Selective etch with respect to carbon mask to provide local cd uniformity
JP7751768B1 (ja) * 2025-03-21 2025-10-08 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002524851A (ja) * 1998-08-31 2002-08-06 アプライド マテリアルズ インコーポレイテッド ポリシリコンをバックエッチングするプロセス及びトレンチキャパシタの製造への応用
WO2018037739A1 (ja) * 2016-08-22 2018-03-01 東京エレクトロン株式会社 エッチング方法およびｄｒａｍキャパシタの製造方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60110122A (ja) * 1983-11-18 1985-06-15 Semiconductor Energy Lab Co Ltd 半導体エッチング方法
JPS61224325A (ja) * 1985-03-28 1986-10-06 Toshiba Corp コンタクト孔の形成方法
JPS6230330A (ja) * 1985-07-31 1987-02-09 Toshiba Corp ドライエツチング方法
US5126169A (en) * 1986-08-28 1992-06-30 Canon Kabushiki Kaisha Process for forming a deposited film from two mutually reactive active species
JPH08181116A (ja) * 1994-12-26 1996-07-12 Mitsubishi Electric Corp ドライエッチング方法及びドライエッチング装置
KR0179281B1 (ko) * 1996-02-28 1999-10-01 문정환 챔버를 갖는 베이퍼-에치 장치의 에치-종말점 측정방법
US20090286402A1 (en) * 2008-05-13 2009-11-19 Applied Materials, Inc Method for critical dimension shrink using conformal pecvd films
JP2009277890A (ja) 2008-05-15 2009-11-26 Sekisui Chem Co Ltd エッチング方法及び装置
TWI390582B (zh) * 2008-07-16 2013-03-21 住友重機械工業股份有限公司 Plasma processing device and plasma processing method
US8809195B2 (en) * 2008-10-20 2014-08-19 Asm America, Inc. Etching high-k materials
US9580809B2 (en) * 2014-01-16 2017-02-28 The United States Of America, As Represented By The Secretary Of Commerce Article with gradient property and processes for selective etching
JP2016012609A (ja) * 2014-06-27 2016-01-21 東京エレクトロン株式会社 エッチング方法
JP6423643B2 (ja) 2014-08-08 2018-11-14 東京エレクトロン株式会社 多層膜をエッチングする方法
JP6613207B2 (ja) * 2015-11-13 2019-11-27 東京エレクトロン株式会社 被処理体をエッチングする方法
KR101874821B1 (ko) * 2016-04-05 2018-07-06 주식회사 테스 저온 공정을 이용한 실리콘산화막의 선택적 식각 방법
JP7109165B2 (ja) * 2017-05-30 2022-07-29 東京エレクトロン株式会社 エッチング方法
KR102741055B1 (ko) * 2018-02-15 2024-12-10 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 방법 및 플라즈마 에칭 장치
JP7366918B2 (ja) * 2018-03-16 2023-10-23 ラム リサーチ コーポレーション 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
US11270889B2 (en) * 2018-06-04 2022-03-08 Tokyo Electron Limited Etching method and etching apparatus
KR102904251B1 (ko) * 2019-02-18 2025-12-24 도쿄엘렉트론가부시키가이샤 에칭 방법
WO2021090798A1 (ja) * 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
US11456180B2 (en) * 2019-11-08 2022-09-27 Tokyo Electron Limited Etching method
JP7604145B2 (ja) * 2019-11-25 2024-12-23 東京エレクトロン株式会社 基板処理方法及びプラズマ処理装置
US11342194B2 (en) * 2019-11-25 2022-05-24 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
KR102459129B1 (ko) * 2020-04-30 2022-10-26 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 플라즈마 처리 장치
WO2022234640A1 (ja) * 2021-05-07 2022-11-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002524851A (ja) * 1998-08-31 2002-08-06 アプライド マテリアルズ インコーポレイテッド ポリシリコンをバックエッチングするプロセス及びトレンチキャパシタの製造への応用
WO2018037739A1 (ja) * 2016-08-22 2018-03-01 東京エレクトロン株式会社 エッチング方法およびｄｒａｍキャパシタの製造方法

Also Published As

Publication number Publication date
JP7336623B2 (ja) 2023-08-31
TW202538867A (zh) 2025-10-01
WO2022230118A1 (ja) 2022-11-03
US20230268191A1 (en) 2023-08-24
JPWO2022230118A1 (https=) 2022-11-03
JP2025068048A (ja) 2025-04-24
TW202242995A (zh) 2022-11-01
JP7639042B2 (ja) 2025-03-04
KR102737019B1 (ko) 2024-12-03
JP2023063526A (ja) 2023-05-09
US20250323055A1 (en) 2025-10-16
CN116034454A (zh) 2023-04-28
KR20230137285A (ko) 2023-10-04
KR102737019B9 (ko) 2025-06-05
KR20250005413A (ko) 2025-01-09

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