KR20250005413A - 에칭 방법 - Google Patents
에칭 방법 Download PDFInfo
- Publication number
- KR20250005413A KR20250005413A KR1020247039533A KR20247039533A KR20250005413A KR 20250005413 A KR20250005413 A KR 20250005413A KR 1020247039533 A KR1020247039533 A KR 1020247039533A KR 20247039533 A KR20247039533 A KR 20247039533A KR 20250005413 A KR20250005413 A KR 20250005413A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- film
- etching
- experiment
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H01L21/31116—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H01L21/0332—
-
- H01L21/31144—
-
- H01L21/32137—
-
- H01L21/32139—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
- H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020237007617A KR102737019B1 (ko) | 2021-04-28 | 2021-04-28 | 에칭 방법 |
| PCT/JP2021/017012 WO2022230118A1 (ja) | 2021-04-28 | 2021-04-28 | エッチング方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237007617A Division KR102737019B1 (ko) | 2021-04-28 | 2021-04-28 | 에칭 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20250005413A true KR20250005413A (ko) | 2025-01-09 |
Family
ID=83848133
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247039533A Pending KR20250005413A (ko) | 2021-04-28 | 2021-04-28 | 에칭 방법 |
| KR1020237007617A Active KR102737019B1 (ko) | 2021-04-28 | 2021-04-28 | 에칭 방법 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237007617A Active KR102737019B1 (ko) | 2021-04-28 | 2021-04-28 | 에칭 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20230268191A1 (https=) |
| JP (3) | JP7336623B2 (https=) |
| KR (2) | KR20250005413A (https=) |
| CN (1) | CN116034454A (https=) |
| TW (2) | TWI890783B (https=) |
| WO (1) | WO2022230118A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7773971B2 (ja) * | 2022-12-27 | 2025-11-20 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| WO2024171669A1 (ja) * | 2023-02-13 | 2024-08-22 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| WO2024171666A1 (ja) * | 2023-02-13 | 2024-08-22 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| JP7836946B2 (ja) * | 2023-09-28 | 2026-03-27 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US20250293042A1 (en) * | 2024-03-15 | 2025-09-18 | Tokyo Electron Limited | Harc etch chemistry for seminconductors |
| WO2026035547A1 (en) * | 2024-08-05 | 2026-02-12 | Lam Research Corporation | High aspect ratio feature etching by multi-state pulsing |
| WO2026035464A1 (en) * | 2024-08-06 | 2026-02-12 | Lam Research Corporation | Selective etch with respect to carbon mask to provide local cd uniformity |
| JP7751768B1 (ja) * | 2025-03-21 | 2025-10-08 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016039310A (ja) | 2014-08-08 | 2016-03-22 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60110122A (ja) * | 1983-11-18 | 1985-06-15 | Semiconductor Energy Lab Co Ltd | 半導体エッチング方法 |
| JPS61224325A (ja) * | 1985-03-28 | 1986-10-06 | Toshiba Corp | コンタクト孔の形成方法 |
| JPS6230330A (ja) * | 1985-07-31 | 1987-02-09 | Toshiba Corp | ドライエツチング方法 |
| US5126169A (en) * | 1986-08-28 | 1992-06-30 | Canon Kabushiki Kaisha | Process for forming a deposited film from two mutually reactive active species |
| JPH08181116A (ja) * | 1994-12-26 | 1996-07-12 | Mitsubishi Electric Corp | ドライエッチング方法及びドライエッチング装置 |
| KR0179281B1 (ko) * | 1996-02-28 | 1999-10-01 | 문정환 | 챔버를 갖는 베이퍼-에치 장치의 에치-종말점 측정방법 |
| US6074954A (en) * | 1998-08-31 | 2000-06-13 | Applied Materials, Inc | Process for control of the shape of the etch front in the etching of polysilicon |
| US20070246161A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with a toroidal plasma source and a VHF capacitively coupled plasma source with variable frequency |
| US8235001B2 (en) * | 2007-04-02 | 2012-08-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
| US20090286402A1 (en) * | 2008-05-13 | 2009-11-19 | Applied Materials, Inc | Method for critical dimension shrink using conformal pecvd films |
| JP2009277890A (ja) | 2008-05-15 | 2009-11-26 | Sekisui Chem Co Ltd | エッチング方法及び装置 |
| TWI390582B (zh) * | 2008-07-16 | 2013-03-21 | 住友重機械工業股份有限公司 | Plasma processing device and plasma processing method |
| US8809195B2 (en) * | 2008-10-20 | 2014-08-19 | Asm America, Inc. | Etching high-k materials |
| US9809882B2 (en) * | 2014-01-16 | 2017-11-07 | The United States Of America, As Represented By The Secretary Of Commerce | Article and process for selective deposition |
| JP2016012609A (ja) * | 2014-06-27 | 2016-01-21 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6613207B2 (ja) * | 2015-11-13 | 2019-11-27 | 東京エレクトロン株式会社 | 被処理体をエッチングする方法 |
| KR101874821B1 (ko) * | 2016-04-05 | 2018-07-06 | 주식회사 테스 | 저온 공정을 이용한 실리콘산화막의 선택적 식각 방법 |
| JP6689159B2 (ja) | 2016-08-22 | 2020-04-28 | 東京エレクトロン株式会社 | エッチング方法およびｄｒａｍキャパシタの製造方法 |
| JP7109165B2 (ja) * | 2017-05-30 | 2022-07-29 | 東京エレクトロン株式会社 | エッチング方法 |
| US10811275B2 (en) * | 2018-02-15 | 2020-10-20 | Tokyo Electron Limited | Plasma etching method and plasma etching apparatus |
| CN118588548A (zh) * | 2018-03-16 | 2024-09-03 | 朗姆研究公司 | 在电介质中的高深宽比特征的等离子体蚀刻化学过程 |
| US11270889B2 (en) * | 2018-06-04 | 2022-03-08 | Tokyo Electron Limited | Etching method and etching apparatus |
| KR102904251B1 (ko) * | 2019-02-18 | 2025-12-24 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
| US11456180B2 (en) * | 2019-11-08 | 2022-09-27 | Tokyo Electron Limited | Etching method |
| KR102723916B1 (ko) * | 2019-11-08 | 2024-10-31 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
| US11361976B2 (en) * | 2019-11-25 | 2022-06-14 | Tokyo Electron Limited | Substrate processing method and plasma processing apparatus |
| JP7604145B2 (ja) * | 2019-11-25 | 2024-12-23 | 東京エレクトロン株式会社 | 基板処理方法及びプラズマ処理装置 |
| KR102459129B1 (ko) * | 2020-04-30 | 2022-10-26 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 및 플라즈마 처리 장치 |
| JP7679463B2 (ja) * | 2021-05-07 | 2025-05-19 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
-
2021
- 2021-04-28 WO PCT/JP2021/017012 patent/WO2022230118A1/ja not_active Ceased
- 2021-04-28 KR KR1020247039533A patent/KR20250005413A/ko active Pending
- 2021-04-28 KR KR1020237007617A patent/KR102737019B1/ko active Active
- 2021-04-28 JP JP2023514954A patent/JP7336623B2/ja active Active
- 2021-04-28 CN CN202180054563.7A patent/CN116034454A/zh active Pending
- 2021-05-04 TW TW110116004A patent/TWI890783B/zh active
- 2021-05-04 TW TW114123571A patent/TW202538867A/zh unknown
-
2023
- 2023-03-16 JP JP2023041775A patent/JP7639042B2/ja active Active
- 2023-04-28 US US18/140,694 patent/US20230268191A1/en active Pending
-
2025
- 2025-02-19 JP JP2025024843A patent/JP2025068048A/ja active Pending
- 2025-06-23 US US19/245,988 patent/US20250323055A1/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016039310A (ja) | 2014-08-08 | 2016-03-22 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202538867A (zh) | 2025-10-01 |
| JP2025068048A (ja) | 2025-04-24 |
| TWI890783B (zh) | 2025-07-21 |
| KR20230137285A (ko) | 2023-10-04 |
| JP7336623B2 (ja) | 2023-08-31 |
| JP2023063526A (ja) | 2023-05-09 |
| WO2022230118A1 (ja) | 2022-11-03 |
| TW202242995A (zh) | 2022-11-01 |
| US20230268191A1 (en) | 2023-08-24 |
| CN116034454A (zh) | 2023-04-28 |
| KR102737019B9 (ko) | 2025-06-05 |
| US20250323055A1 (en) | 2025-10-16 |
| JP7639042B2 (ja) | 2025-03-04 |
| JPWO2022230118A1 (https=) | 2022-11-03 |
| KR102737019B1 (ko) | 2024-12-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A107 | Divisional application of patent | ||
| PA0104 | Divisional application for international application |
St.27 status event code: A-0-1-A10-A16-div-PA0104 |
|
| A201 | Request for examination | ||
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| D21 | Rejection of application intended |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| E13 | Pre-grant limitation requested |
Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
| P11 | Amendment of application requested |
Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
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| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |