JP7336623B2 - エッチング方法 - Google Patents
エッチング方法 Download PDFInfo
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- JP7336623B2 JP7336623B2 JP2023514954A JP2023514954A JP7336623B2 JP 7336623 B2 JP7336623 B2 JP 7336623B2 JP 2023514954 A JP2023514954 A JP 2023514954A JP 2023514954 A JP2023514954 A JP 2023514954A JP 7336623 B2 JP7336623 B2 JP 7336623B2
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- JP
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- Prior art keywords
- gas
- etching method
- film
- etching
- chamber
- Prior art date
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- 238000005530 etching Methods 0.000 title claims description 151
- 238000000034 method Methods 0.000 title claims description 151
- 239000007789 gas Substances 0.000 claims description 529
- 239000000758 substrate Substances 0.000 claims description 171
- 238000012545 processing Methods 0.000 claims description 142
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 112
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 107
- 230000008569 process Effects 0.000 claims description 75
- 229910052799 carbon Inorganic materials 0.000 claims description 61
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- 239000010703 silicon Substances 0.000 claims description 48
- 229910052698 phosphorus Inorganic materials 0.000 claims description 47
- 239000011574 phosphorus Substances 0.000 claims description 47
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 29
- 229910052736 halogen Inorganic materials 0.000 claims description 21
- 150000002367 halogens Chemical class 0.000 claims description 21
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- 239000013626 chemical specie Substances 0.000 claims description 14
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 13
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- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 13
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- 229910052740 iodine Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
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- -1 phosphorus halide Chemical class 0.000 claims description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 7
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 claims description 5
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052724 xenon Inorganic materials 0.000 claims description 4
- PGYDGBCATBINCB-UHFFFAOYSA-N 4-diethoxyphosphoryl-n,n-dimethylaniline Chemical compound CCOP(=O)(OCC)C1=CC=C(N(C)C)C=C1 PGYDGBCATBINCB-UHFFFAOYSA-N 0.000 claims description 3
- 229910015844 BCl3 Inorganic materials 0.000 claims description 3
- 239000006009 Calcium phosphide Substances 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- PNGLEYLFMHGIQO-UHFFFAOYSA-M sodium;3-(n-ethyl-3-methoxyanilino)-2-hydroxypropane-1-sulfonate;dihydrate Chemical compound O.O.[Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC=CC(OC)=C1 PNGLEYLFMHGIQO-UHFFFAOYSA-M 0.000 claims description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 3
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 2
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims 2
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- 229910001392 phosphorus oxide Inorganic materials 0.000 claims 2
- 239000011734 sodium Substances 0.000 claims 2
- 239000001488 sodium phosphate Substances 0.000 claims 2
- 229910000162 sodium phosphate Inorganic materials 0.000 claims 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 238000002474 experimental method Methods 0.000 description 155
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- WKFBZNUBXWCCHG-UHFFFAOYSA-N phosphorus trifluoride Chemical compound FP(F)F WKFBZNUBXWCCHG-UHFFFAOYSA-N 0.000 description 15
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- 239000012528 membrane Substances 0.000 description 4
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
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- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Chemical compound BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
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- 229930195733 hydrocarbon Natural products 0.000 description 3
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- OBCUTHMOOONNBS-UHFFFAOYSA-N phosphorus pentafluoride Chemical compound FP(F)(F)(F)F OBCUTHMOOONNBS-UHFFFAOYSA-N 0.000 description 3
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 3
- 229910014263 BrF3 Inorganic materials 0.000 description 2
- 229910020323 ClF3 Inorganic materials 0.000 description 2
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
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- VVRKSAMWBNJDTH-UHFFFAOYSA-N difluorophosphane Chemical compound FPF VVRKSAMWBNJDTH-UHFFFAOYSA-N 0.000 description 2
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- 239000011261 inert gas Substances 0.000 description 2
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- 235000011007 phosphoric acid Nutrition 0.000 description 2
- UXCDUFKZSUBXGM-UHFFFAOYSA-N phosphoric tribromide Chemical compound BrP(Br)(Br)=O UXCDUFKZSUBXGM-UHFFFAOYSA-N 0.000 description 2
- UHZYTMXLRWXGPK-UHFFFAOYSA-N phosphorus pentachloride Chemical compound ClP(Cl)(Cl)(Cl)Cl UHZYTMXLRWXGPK-UHFFFAOYSA-N 0.000 description 2
- FFUQCRZBKUBHQT-UHFFFAOYSA-N phosphoryl fluoride Chemical compound FP(F)(F)=O FFUQCRZBKUBHQT-UHFFFAOYSA-N 0.000 description 2
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- 238000012546 transfer Methods 0.000 description 2
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- 229910014271 BrF5 Inorganic materials 0.000 description 1
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- 229910004713 HPF6 Inorganic materials 0.000 description 1
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- 229910019256 POF3 Inorganic materials 0.000 description 1
- 101100408805 Schizosaccharomyces pombe (strain 972 / ATCC 24843) pof3 gene Proteins 0.000 description 1
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
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- 238000002161 passivation Methods 0.000 description 1
- UXPOJVLZTPGWFX-UHFFFAOYSA-N pentafluoroethyl iodide Chemical compound FC(F)(F)C(F)(F)I UXPOJVLZTPGWFX-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
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- PZHNNJXWQYFUTD-UHFFFAOYSA-N phosphorus triiodide Chemical compound IP(I)I PZHNNJXWQYFUTD-UHFFFAOYSA-N 0.000 description 1
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- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VPAYJEUHKVESSD-UHFFFAOYSA-N trifluoroiodomethane Chemical compound FC(F)(F)I VPAYJEUHKVESSD-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Description
(A1). シリコン酸化膜のプラズマエッチング用の処理ガスであって、フッ化水素ガス、リン含有ガス、及び炭素含有ガスを含む、処理ガス。
(A2). 前記フッ化水素ガスの流量、前記リン含有ガスの流量、及び前記炭素含有ガスの流量のうち、前記フッ化水素ガスの流量が最も大きい、A1に記載の処理ガス。
(B1). (a)プラズマ処理装置のチャンバ内に基板を準備する工程であり、該基板はシリコン含有膜を含む、該工程と、
(b)前記チャンバ内で処理ガスから形成されたプラズマからの化学種により前記シリコン含有膜をエッチングする工程であり、前記処理ガスは、リン含有ガス、フッ素含有ガス、ハイドロフルオロカーボンガス、及びフッ素以外のハロゲン元素を含有するハロゲン含有ガスを含む、該工程と、
を含む、エッチング方法。
(B2). 前記フッ素含有ガスは、フルオロカーボンガス及び炭素を含有しないフッ素含有ガスからなる群から選択される少なくとも一つのガスを含む、B1に記載のエッチング方法。
(B3). 前記炭素を含有しないフッ素含有ガスは、三フッ化窒素ガス又は六フッ化硫黄ガスである、B2に記載のエッチング方法。
(B4). 前記ハロゲン含有ガスは、Cl2ガス及び/又はHBrガスである、B1~B3の何れか一項に記載のエッチング方法。
Claims (34)
- (a)プラズマ処理装置のチャンバ内に基板を準備する工程であり、該基板はマスク及び該マスク下に設けられたシリコン含有膜を含む、該工程と、
(b)前記チャンバ内で処理ガスから生成されたプラズマからの化学種により前記シリコン含有膜をエッチングする工程と、
を含み、
前記処理ガスは、フッ化水素ガス及び炭素含有ガスを含み、
希ガスを含まない前記処理ガスにおける全てのガスの流量のうち前記フッ化水素ガスの流量が最も多いか、前記処理ガスにおける希ガスを除く全てのガスの流量のうち前記フッ化水素ガスの流量が最も多い、
エッチング方法。 - 前記処理ガスは、リン含有ガスを更に含む、請求項1に記載のエッチング方法。
- 前記リン含有ガスは、リンの酸化物、リンのハロゲン化物、ハロゲン化ホスリル、ホスフィン、リン化カルシウム、リン酸、リン酸ナトリウム、ヘキサフルオロリン酸、フルオロホスフィンのそれぞれのガスのうち一つ以上を含む、請求項2に記載のエッチング方法。
- 前記リン含有ガスは、P 4 O 10 、P 4 O 8 、P 4 O 6 、PF 3 、PF 5 、PCl 3 、PCl 5 、PBr 3 、PBr 5 、PI 3 、POF 3 、POCl 3 、POBr 3 、PH 3 、Ca 3 P 2 、H 3 PO 4 、Na 3 PO 4 、HPF 2 、H 2 PF 3 、HPF 6 のそれぞれのガスのうち一つ以上のガスを含む、請求項2に記載のエッチング方法。
- 前記処理ガスは、アミン系ガスを更に含む、請求項1に記載のエッチング方法。
- 前記炭素含有ガスは、その分子中の炭素原子数が一つ以上、六つ以下であるフルオロカーボン及び/又はハイドロフルオロカーボンを含む、請求項1~5の何れか一項に記載のエッチング方法。
- 前記(b)において、前記炭素含有ガスの流量が段階的に減少される、請求項1~6の何れか一項に記載のエッチング方法。
- 前記(b)において、前記チャンバ内の圧力が0.666パスカル以上、2.666パスカル以下に設定される、請求項7に記載のエッチング方法。
- 前記炭素含有ガスは、CF4、C2F2、C2F4、C3F8、C4F6、C4F8、C5F8、CHF3、CH2F2、CH3F、C2HF5、C2H2F4、C2H3F3、C2H4F2、C3HF7、C3H2F2、C3H2F6、C3H2F4、C3H3F5、C4H5F5、C4H2F6、C5H2F10、c-C5H3F7、CH4、C2H6、C3H6、C3H8、C4H10 のそれぞれのガスのうち一つ以上のガスを含み、ここで、x、y、zは1以上の整数である、請求項1~8の何れか一項に記載のエッチング方法。
- (a)プラズマ処理装置のチャンバ内に基板を準備する工程であり、該基板はシリコン含有膜及び該シリコン含有膜上に設けられたマスクを含む、該工程と、
(b)前記チャンバ内で処理ガスから生成されたプラズマからの化学種により前記シリコン含有膜をエッチングする工程と、
を含み、
前記処理ガスは、フッ化水素ガスを含み、リン含有ガス又はアミン系ガスを更に含み、
希ガスを含まない前記処理ガスにおける全てのガスの流量のうち前記フッ化水素ガスの流量が最も多いか、前記処理ガスにおける希ガスを除く全てのガスの流量のうち前記フッ化水素ガスの流量が最も多い、
エッチング方法。 - 前記リン含有ガスは、リンの酸化物、リンのハロゲン化物、ハロゲン化ホスリル、ホスフィン、リン化カルシウム、リン酸、リン酸ナトリウム、ヘキサフルオロリン酸、フルオロホスフィンのそれぞれのガスのうち一つ以上を含む、請求項10に記載のエッチング方法。
- 前記リン含有ガスは、P 4 O 10 、P 4 O 8 、P 4 O 6 、PF 3 、PF 5 、PCl 3 、PCl 5 、PBr 3 、PBr 5 、PI 3 、POF 3 、POCl 3 、POBr 3 、PH 3 、Ca 3 P 2 、H 3 PO 4 、Na 3 PO 4 、HPF 2 、H 2 PF 3 、HPF 6 のそれぞれのガスのうち一つ以上のガスを含む、請求項10に記載のエッチング方法。
- 前記処理ガスは、NF3、O2、CO2、CO、N2、He、Ar、Kr、Xeのそれぞれのガスのうち一つ以上のガスを更に含む請求項1~12の何れか一項に記載のエッチング方法。
- 前記処理ガスは、ハロゲン含有ガスを更に含む、請求項1~13の何れか一項に記載のエッチング方法。
- 前記ハロゲン含有ガスは、Cl2、Br2、HCl、HBr、HI、BCl3、CHxCly、CFxBry、CFxIy、ClF3、IF5、IF7、BrF3のそれぞれのガスのうち一つ以上のガスを含み、ここで、x、yは1以上の整数である、請求項14に記載のエッチング方法。
- 前記処理ガスは、塩素含有ガスを更に含む、請求項1~13の何れか一項に記載のエッチング方法。
- 前記塩素含有ガスは、Cl2、HCl、BCl3、及びCHxClyのそれぞれのガスのうち一つ以上を含み、ここで、x、yは1以上の整数である、請求項16に記載のエッチング方法。
- 前記塩素含有ガスは、HClを含む、請求項16に記載のエッチング方法。
- 前記処理ガスは、ヨウ素含有ガスを更に含む、請求項1~18の何れか一項に記載のエッチング方法。
- 前記ヨウ素含有ガスは、HI、IFt、及びCxFyIzのうち一つ以上を含み、ここで、t、x、y、zは、1以上の整数である、請求項19に記載のエッチング方法。
- 前記(b)において、前記チャンバ内の圧力が段階的に減少される、請求項1~20の何れか一項に記載のエッチング方法。
- 前記シリコン含有膜は、シリコン酸化膜及び/又はシリコン窒化膜を含む、請求項1~21の何れか一項に記載のエッチング方法。
- 前記シリコン含有膜は、多結晶シリコン膜を更に含む、請求項22に記載のエッチング方法。
- 前記マスクは炭素含有マスクである、請求項1~23の何れか一項に記載のエッチング方法。
- 前記マスクは金属含有マスクである、請求項1~23の何れか一項に記載のエッチング方法。
- 前記基板は、前記チャンバ内の基板支持器上に載置され、
前記(b)において、
前記基板支持器又は該基板支持器の上方に設けられた上部電極に第1の周波数を有する高周波電力が供給され、
前記基板支持器に第2の周波数を有する電気バイアスが供給される、
請求項1~25の何れか一項に記載のエッチング方法。 - 前記電気バイアスは、前記第2の周波数を有する高周波電力であるか、第2の周波数で周期的に発生される電圧のパルス波である、請求項26に記載のエッチング方法。
- 前記電気バイアスのパルス波が、第3の周波数で前記基板支持器に周期的に供給される、請求項27に記載のエッチング方法。
- 前記(b)は、前記基板支持器の温度が0℃以下に設定されてから開始される、請求項26~28の何れか一項に記載のエッチング方法。
- 前記処理ガスは、Xeを更に含む請求項1~29の何れか一項に記載のエッチング方法。
- 前記(b)により、前記シリコン含有膜に、20以上のアスペクト比を有する凹部が形成される、請求項1~30の何れか一項に記載のエッチング方法。
- 前記マスクは、3μm以上の厚みを有する、請求項1~31の何れか一項に記載のエッチング方法。
- チャンバと、
前記チャンバ内に設けられた基板支持器と、
前記チャンバ内にガスを供給するように構成されたガス供給部と、
前記チャンバ内でガスからプラズマを生成するように構成されたプラズマ生成部と、
前記ガス供給部及び前記プラズマ生成部を制御するように構成された制御部と、
を備え、
前記制御部は、シリコン含有膜を含む基板が前記基板支持器上に載置された状態で、前記チャンバ内で処理ガスから生成されたプラズマからの化学種により前記シリコン含有膜をエッチングする工程を実行するように構成されており、
前記処理ガスは、フッ化水素ガス及び炭素含有ガスを含み、
希ガスを含まない前記処理ガスにおける全てのガスの流量のうち前記フッ化水素ガスの流量が最も多いか、前記処理ガスにおける希ガスを除く全てのガスの流量のうち前記フッ化水素ガスの流量が最も多い、
プラズマ処理装置。 - チャンバと、
前記チャンバ内に設けられた基板支持器と、
前記チャンバ内にガスを供給するように構成されたガス供給部と、
前記チャンバ内でガスからプラズマを生成するように構成されたプラズマ生成部と、
前記ガス供給部及び前記プラズマ生成部を制御するように構成された制御部と、
を備え、
前記制御部は、シリコン含有膜を含む基板が前記基板支持器上に載置された状態で、前記チャンバ内で処理ガスから生成されたプラズマからの化学種により前記シリコン含有膜をエッチングする工程を実行するように構成されており、
前記処理ガスは、フッ化水素ガスを含み、リン含有ガス又はアミン系ガスを更に含み、
希ガスを含まない前記処理ガスにおける全てのガスの流量のうち前記フッ化水素ガスの流量が最も多いか、前記処理ガスにおける希ガスを除く全てのガスの流量のうち前記フッ化水素ガスの流量が最も多い、
プラズマ処理装置。
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JP2009277890A (ja) | 2008-05-15 | 2009-11-26 | Sekisui Chem Co Ltd | エッチング方法及び装置 |
WO2018037739A1 (ja) | 2016-08-22 | 2018-03-01 | 東京エレクトロン株式会社 | エッチング方法およびdramキャパシタの製造方法 |
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JP2009277890A (ja) | 2008-05-15 | 2009-11-26 | Sekisui Chem Co Ltd | エッチング方法及び装置 |
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