JPWO2022145454A5 - - Google Patents
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- JPWO2022145454A5 JPWO2022145454A5 JP2022573107A JP2022573107A JPWO2022145454A5 JP WO2022145454 A5 JPWO2022145454 A5 JP WO2022145454A5 JP 2022573107 A JP2022573107 A JP 2022573107A JP 2022573107 A JP2022573107 A JP 2022573107A JP WO2022145454 A5 JPWO2022145454 A5 JP WO2022145454A5
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- Prior art keywords
- semiconductor
- layer
- semiconductor substrate
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020219850 | 2020-12-29 | ||
| JP2020219850 | 2020-12-29 | ||
| PCT/JP2021/048835 WO2022145454A1 (ja) | 2020-12-29 | 2021-12-28 | 半導体基板、半導体デバイス、電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022145454A1 JPWO2022145454A1 (https=) | 2022-07-07 |
| JPWO2022145454A5 true JPWO2022145454A5 (https=) | 2025-01-07 |
| JP7817190B2 JP7817190B2 (ja) | 2026-02-18 |
Family
ID=79193415
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021031013A Active JP6986645B1 (ja) | 2020-12-29 | 2021-02-26 | 半導体基板、半導体デバイス、電子機器 |
| JP2022573107A Active JP7817190B2 (ja) | 2020-12-29 | 2021-12-28 | 半導体基板、半導体デバイス、電子機器 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021031013A Active JP6986645B1 (ja) | 2020-12-29 | 2021-02-26 | 半導体基板、半導体デバイス、電子機器 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20240072198A1 (https=) |
| EP (1) | EP4273306A4 (https=) |
| JP (2) | JP6986645B1 (https=) |
| KR (2) | KR20250065711A (https=) |
| CN (1) | CN116783335A (https=) |
| TW (2) | TWI838676B (https=) |
| WO (1) | WO2022145454A1 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110603651B (zh) * | 2017-05-05 | 2023-07-18 | 加利福尼亚大学董事会 | 移除衬底的方法 |
| WO2022270309A1 (ja) * | 2021-06-21 | 2022-12-29 | 京セラ株式会社 | 半導体デバイスの製造方法および製造装置、半導体デバイスならびに電子機器 |
| JP2024525695A (ja) * | 2021-07-13 | 2024-07-12 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 高品質エピタキシャル結晶層上での小型発光ダイオードの作成方法 |
| WO2023153358A1 (ja) * | 2022-02-10 | 2023-08-17 | 京セラ株式会社 | レーザ素子の製造方法および製造装置 |
| JP7835616B2 (ja) * | 2022-05-20 | 2026-03-25 | 京セラ株式会社 | 半導体基板、テンプレート基板、半導体基板の製造方法および製造装置、半導体デバイスの製造方法および製造装置、半導体デバイス |
| WO2024084634A1 (ja) * | 2022-10-19 | 2024-04-25 | 京セラ株式会社 | 半導体基板、半導体基板の製造方法および製造装置 |
| WO2024084664A1 (ja) * | 2022-10-20 | 2024-04-25 | 京セラ株式会社 | 半導体基板、テンプレート基板、並びにテンプレート基板の製造方法および製造装置 |
| JPWO2024122644A1 (https=) * | 2022-12-09 | 2024-06-13 | ||
| TWI899826B (zh) * | 2023-01-31 | 2025-10-01 | 日商京瓷股份有限公司 | 半導體基板、半導體基板之製造方法及製造裝置 |
| WO2024211817A1 (en) | 2023-04-06 | 2024-10-10 | Slt Technologies, Inc. | High quality group-iii metal nitride crystals and methods of making |
| WO2025115999A1 (ja) * | 2023-12-01 | 2025-06-05 | 京セラ株式会社 | 半導体基板およびその製造方法、半導体基板の製造装置、並びに半導体デバイス |
| WO2025216274A1 (ja) * | 2024-04-10 | 2025-10-16 | 京セラ株式会社 | 半導体基板およびその製造方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2311132C (en) * | 1997-10-30 | 2004-12-07 | Sumitomo Electric Industries, Ltd. | Gan single crystalline substrate and method of producing the same |
| US6252261B1 (en) * | 1998-09-30 | 2001-06-26 | Nec Corporation | GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor |
| JP2000349338A (ja) * | 1998-09-30 | 2000-12-15 | Nec Corp | ＧａＮ結晶膜、ＩＩＩ族元素窒化物半導体ウェーハ及びその製造方法 |
| US6812053B1 (en) * | 1999-10-14 | 2004-11-02 | Cree, Inc. | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures |
| JP4667556B2 (ja) * | 2000-02-18 | 2011-04-13 | 古河電気工業株式会社 | 縦型ＧａＮ系電界効果トランジスタ、バイポーラトランジスタと縦型ＧａＮ系電界効果トランジスタの製造方法 |
| JP4556300B2 (ja) * | 2000-07-18 | 2010-10-06 | ソニー株式会社 | 結晶成長方法 |
| JP3801125B2 (ja) * | 2001-10-09 | 2006-07-26 | 住友電気工業株式会社 | 単結晶窒化ガリウム基板と単結晶窒化ガリウムの結晶成長方法および単結晶窒化ガリウム基板の製造方法 |
| US7498608B2 (en) * | 2001-10-29 | 2009-03-03 | Sharp Kabushiki Kaisha | Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device |
| US7208393B2 (en) * | 2002-04-15 | 2007-04-24 | The Regents Of The University Of California | Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy |
| FR2840452B1 (fr) * | 2002-05-28 | 2005-10-14 | Lumilog | Procede de realisation par epitaxie d'un film de nitrure de gallium separe de son substrat |
| KR101086155B1 (ko) * | 2002-12-16 | 2011-11-25 | 독립행정법인 과학기술진흥기구 | 수소화합물 기상 성장법에 의한 평면, 비극성 질화 갈륨의 성장 |
| KR100513316B1 (ko) * | 2003-01-21 | 2005-09-09 | 삼성전기주식회사 | 고효율 반도체 소자 제조방법 |
| US7445673B2 (en) * | 2004-05-18 | 2008-11-04 | Lumilog | Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof |
| US7956360B2 (en) * | 2004-06-03 | 2011-06-07 | The Regents Of The University Of California | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy |
| JP4182935B2 (ja) * | 2004-08-25 | 2008-11-19 | 住友電気工業株式会社 | 窒化ガリウムの結晶成長方法および窒化ガリウム基板の製造方法 |
| TW200703463A (en) * | 2005-05-31 | 2007-01-16 | Univ California | Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) |
| JP4656410B2 (ja) * | 2005-09-05 | 2011-03-23 | 住友電気工業株式会社 | 窒化物半導体デバイスの製造方法 |
| TWI408264B (zh) * | 2005-12-15 | 2013-09-11 | 聖戈班晶體探測器公司 | 低差排密度氮化鎵（ＧａＮ）之生長方法 |
| JP4807081B2 (ja) * | 2006-01-16 | 2011-11-02 | ソニー株式会社 | ＧａＮ系化合物半導体から成る下地層の形成方法、並びに、ＧａＮ系半導体発光素子の製造方法 |
| US8362503B2 (en) * | 2007-03-09 | 2013-01-29 | Cree, Inc. | Thick nitride semiconductor structures with interlayer structures |
| TWI415295B (zh) * | 2008-06-24 | 2013-11-11 | 榮創能源科技股份有限公司 | 半導體元件的製造方法及其結構 |
| US9589792B2 (en) * | 2012-11-26 | 2017-03-07 | Soraa, Inc. | High quality group-III metal nitride crystals, methods of making, and methods of use |
| JP2011066398A (ja) * | 2009-08-20 | 2011-03-31 | Pawdec:Kk | 半導体素子およびその製造方法 |
| US8110484B1 (en) * | 2010-11-19 | 2012-02-07 | Sumitomo Electric Industries, Ltd. | Conductive nitride semiconductor substrate and method for producing the same |
| JP5681937B2 (ja) * | 2010-11-25 | 2015-03-11 | 株式会社パウデック | 半導体素子およびその製造方法 |
| EP2701183A4 (en) * | 2011-08-09 | 2014-07-30 | Panasonic Corp | STRUCTURE FOR BREEDING A NITRID SEMICONDUCTOR LAYER, STACKING STRUCTURE, NITRID BASE SEMICONDUCTOR ELEMENT, LIGHTING SOURCE AND MANUFACTURING METHOD THEREFOR |
| JP2013251304A (ja) | 2012-05-30 | 2013-12-12 | Furukawa Co Ltd | 積層体および積層体の製造方法 |
| US9490119B2 (en) * | 2014-05-21 | 2016-11-08 | Palo Alto Research Center Incorporated | Fabrication of thin-film devices using selective area epitaxy |
| CN110603651B (zh) * | 2017-05-05 | 2023-07-18 | 加利福尼亚大学董事会 | 移除衬底的方法 |
-
2021
- 2021-02-26 JP JP2021031013A patent/JP6986645B1/ja active Active
- 2021-12-28 WO PCT/JP2021/048835 patent/WO2022145454A1/ja not_active Ceased
- 2021-12-28 EP EP21915312.9A patent/EP4273306A4/en active Pending
- 2021-12-28 CN CN202180087640.9A patent/CN116783335A/zh active Pending
- 2021-12-28 KR KR1020257013181A patent/KR20250065711A/ko active Pending
- 2021-12-28 KR KR1020237021620A patent/KR102800880B1/ko active Active
- 2021-12-28 US US18/270,077 patent/US20240072198A1/en active Pending
- 2021-12-28 TW TW110149161A patent/TWI838676B/zh active
- 2021-12-28 TW TW113108772A patent/TWI899878B/zh active
- 2021-12-28 JP JP2022573107A patent/JP7817190B2/ja active Active
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