JPWO2022220124A5 - - Google Patents
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- JPWO2022220124A5 JPWO2022220124A5 JP2023514588A JP2023514588A JPWO2022220124A5 JP WO2022220124 A5 JPWO2022220124 A5 JP WO2022220124A5 JP 2023514588 A JP2023514588 A JP 2023514588A JP 2023514588 A JP2023514588 A JP 2023514588A JP WO2022220124 A5 JPWO2022220124 A5 JP WO2022220124A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- semiconductor substrate
- substrate according
- opening
- upper edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021069969 | 2021-04-16 | ||
| JP2021069969 | 2021-04-16 | ||
| PCT/JP2022/016009 WO2022220124A1 (ja) | 2021-04-16 | 2022-03-30 | 半導体基板並びにその製造方法および製造装置、ＧａＮ系結晶体、半導体デバイス、電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022220124A1 JPWO2022220124A1 (https=) | 2022-10-20 |
| JPWO2022220124A5 true JPWO2022220124A5 (https=) | 2024-01-23 |
| JP7779906B2 JP7779906B2 (ja) | 2025-12-03 |
Family
ID=83639631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023514588A Active JP7779906B2 (ja) | 2021-04-16 | 2022-03-30 | 半導体基板並びにその製造方法および製造装置、ＧａＮ系結晶体、半導体デバイス、電子機器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240191391A1 (https=) |
| JP (1) | JP7779906B2 (https=) |
| CN (1) | CN117321257A (https=) |
| TW (1) | TWI841952B (https=) |
| WO (1) | WO2022220124A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024201629A1 (ja) * | 2023-03-27 | 2024-10-03 | 京セラ株式会社 | 半導体成長用テンプレート基板、半導体基板、半導体成長用テンプレート基板の製造方法および製造装置、並びに半導体基板の製造方法および製造装置 |
| WO2025115999A1 (ja) * | 2023-12-01 | 2025-06-05 | 京セラ株式会社 | 半導体基板およびその製造方法、半導体基板の製造装置、並びに半導体デバイス |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG186312A1 (en) * | 2010-06-24 | 2013-02-28 | Glo Ab | Substrate with buffer layer for oriented nanowire growth |
| WO2015020161A1 (ja) * | 2013-08-08 | 2015-02-12 | 三菱化学株式会社 | 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ単結晶の製造方法および半導体デバイスの製造方法 |
| US10438792B2 (en) * | 2016-10-20 | 2019-10-08 | QROMIS, Inc. | Methods for integration of elemental and compound semiconductors on a ceramic substrate |
| WO2019191760A1 (en) * | 2018-03-30 | 2019-10-03 | The Regents Of The University Of California | Method of fabricating non-polar and semi-polar devices using epitaxial lateral overgrowth |
| CN112204754B (zh) * | 2018-05-30 | 2024-08-13 | 加利福尼亚大学董事会 | 从半导体衬底移除半导体层的方法 |
| JP6626929B1 (ja) * | 2018-06-29 | 2019-12-25 | 京セラ株式会社 | 半導体デバイス及び電気装置 |
| US11699586B2 (en) * | 2019-08-13 | 2023-07-11 | Enkris Semiconductor, Inc. | Method of manufacturing nitride semiconductor substrate |
-
2022
- 2022-03-30 JP JP2023514588A patent/JP7779906B2/ja active Active
- 2022-03-30 CN CN202280026769.3A patent/CN117321257A/zh active Pending
- 2022-03-30 US US18/555,197 patent/US20240191391A1/en active Pending
- 2022-03-30 WO PCT/JP2022/016009 patent/WO2022220124A1/ja not_active Ceased
- 2022-04-15 TW TW111114376A patent/TWI841952B/zh active
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