CN117321257A - 半导体基板和其制造方法以及制造装置、GaN系晶体、半导体器件、电子设备 - Google Patents

半导体基板和其制造方法以及制造装置、GaN系晶体、半导体器件、电子设备 Download PDF

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Publication number
CN117321257A
CN117321257A CN202280026769.3A CN202280026769A CN117321257A CN 117321257 A CN117321257 A CN 117321257A CN 202280026769 A CN202280026769 A CN 202280026769A CN 117321257 A CN117321257 A CN 117321257A
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semiconductor
layer
semiconductor substrate
opening
substrate according
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CN202280026769.3A
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Chinese (zh)
Inventor
小林敏洋
神川刚
青木优太
林雄一郎
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Kyocera Corp
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Kyocera Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H20/80—Constructional details
    • H10H20/81—Bodies
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
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    • H10P14/2907—Materials being Group IIIA-VA materials
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    • H10P14/3202—Materials thereof
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
CN202280026769.3A 2021-04-16 2022-03-30 半导体基板和其制造方法以及制造装置、GaN系晶体、半导体器件、电子设备 Pending CN117321257A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021069969 2021-04-16
JP2021-069969 2021-04-16
PCT/JP2022/016009 WO2022220124A1 (ja) 2021-04-16 2022-03-30 半導体基板並びにその製造方法および製造装置、ＧａＮ系結晶体、半導体デバイス、電子機器

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CN117321257A true CN117321257A (zh) 2023-12-29

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CN202280026769.3A Pending CN117321257A (zh) 2021-04-16 2022-03-30 半导体基板和其制造方法以及制造装置、GaN系晶体、半导体器件、电子设备

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US (1) US20240191391A1 (https=)
JP (1) JP7779906B2 (https=)
CN (1) CN117321257A (https=)
TW (1) TWI841952B (https=)
WO (1) WO2022220124A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024201629A1 (ja) * 2023-03-27 2024-10-03 京セラ株式会社 半導体成長用テンプレート基板、半導体基板、半導体成長用テンプレート基板の製造方法および製造装置、並びに半導体基板の製造方法および製造装置
WO2025115999A1 (ja) * 2023-12-01 2025-06-05 京セラ株式会社 半導体基板およびその製造方法、半導体基板の製造装置、並びに半導体デバイス

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG186312A1 (en) * 2010-06-24 2013-02-28 Glo Ab Substrate with buffer layer for oriented nanowire growth
WO2015020161A1 (ja) * 2013-08-08 2015-02-12 三菱化学株式会社 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ単結晶の製造方法および半導体デバイスの製造方法
US10438792B2 (en) * 2016-10-20 2019-10-08 QROMIS, Inc. Methods for integration of elemental and compound semiconductors on a ceramic substrate
WO2019191760A1 (en) * 2018-03-30 2019-10-03 The Regents Of The University Of California Method of fabricating non-polar and semi-polar devices using epitaxial lateral overgrowth
CN112204754B (zh) * 2018-05-30 2024-08-13 加利福尼亚大学董事会 从半导体衬底移除半导体层的方法
JP6626929B1 (ja) * 2018-06-29 2019-12-25 京セラ株式会社 半導体デバイス及び電気装置
US11699586B2 (en) * 2019-08-13 2023-07-11 Enkris Semiconductor, Inc. Method of manufacturing nitride semiconductor substrate

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TW202309358A (zh) 2023-03-01
US20240191391A1 (en) 2024-06-13
JP7779906B2 (ja) 2025-12-03
TWI841952B (zh) 2024-05-11
WO2022220124A1 (ja) 2022-10-20
JPWO2022220124A1 (https=) 2022-10-20

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