JPWO2022118055A5 - - Google Patents
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- JPWO2022118055A5 JPWO2022118055A5 JP2022566508A JP2022566508A JPWO2022118055A5 JP WO2022118055 A5 JPWO2022118055 A5 JP WO2022118055A5 JP 2022566508 A JP2022566508 A JP 2022566508A JP 2022566508 A JP2022566508 A JP 2022566508A JP WO2022118055 A5 JPWO2022118055 A5 JP WO2022118055A5
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- JP
- Japan
- Prior art keywords
- region
- well region
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- drift region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 9
- 239000012535 impurity Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/IB2020/000995 WO2022118055A1 (ja) | 2020-12-01 | 2020-12-01 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022118055A1 JPWO2022118055A1 (https=) | 2022-06-09 |
| JPWO2022118055A5 true JPWO2022118055A5 (https=) | 2023-09-19 |
Family
ID=81853856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022566508A Pending JPWO2022118055A1 (https=) | 2020-12-01 | 2020-12-01 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11973108B2 (https=) |
| EP (1) | EP4258363A4 (https=) |
| JP (1) | JPWO2022118055A1 (https=) |
| CN (1) | CN116635984B (https=) |
| WO (1) | WO2022118055A1 (https=) |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5123432B2 (https=) * | 1971-08-26 | 1976-07-16 | ||
| JP3642768B2 (ja) * | 2002-06-17 | 2005-04-27 | 沖電気工業株式会社 | 横型高耐圧半導体装置 |
| US7067877B2 (en) | 2003-03-10 | 2006-06-27 | Fuji Electric Device Technology Co., Ltd. | MIS-type semiconductor device |
| JP2004335990A (ja) * | 2003-03-10 | 2004-11-25 | Fuji Electric Device Technology Co Ltd | Ｍｉｓ型半導体装置 |
| JP2005079339A (ja) * | 2003-08-29 | 2005-03-24 | National Institute Of Advanced Industrial & Technology | 半導体装置、およびその半導体装置を用いた電力変換器、駆動用インバータ、汎用インバータ、大電力高周波通信機器 |
| DE102004014928B4 (de) * | 2004-03-26 | 2018-07-12 | Austriamicrosystems Ag | Hochvolttransistor und Verfahren zu seiner Herstellung |
| JP4890773B2 (ja) * | 2005-03-07 | 2012-03-07 | ラピスセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
| JP2009059949A (ja) * | 2007-08-31 | 2009-03-19 | Sharp Corp | 半導体装置、および、半導体装置の製造方法 |
| JP2010028054A (ja) * | 2008-07-24 | 2010-02-04 | Seiko Epson Corp | 半導体装置およびその製造方法 |
| JP4772843B2 (ja) * | 2008-09-17 | 2011-09-14 | シャープ株式会社 | 半導体装置及びその製造方法 |
| JP2010245369A (ja) * | 2009-04-08 | 2010-10-28 | Toyota Motor Corp | Ｌｄｍｏｓトランジスタ及びその製造方法 |
| JP2011100847A (ja) * | 2009-11-05 | 2011-05-19 | Sharp Corp | 半導体装置及びその製造方法 |
| EP3024018B1 (en) * | 2013-07-19 | 2018-08-08 | Nissan Motor Co., Ltd | Semiconductor device |
| WO2015155828A1 (ja) * | 2014-04-08 | 2015-10-15 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
| JP6346777B2 (ja) * | 2014-04-10 | 2018-06-20 | 旭化成エレクトロニクス株式会社 | 半導体装置の製造方法 |
| KR102056037B1 (ko) | 2017-02-14 | 2019-12-13 | 닛산 지도우샤 가부시키가이샤 | 반도체 장치 및 반도체 장치의 제조 방법 |
| JP7569144B2 (ja) * | 2018-12-19 | 2024-10-17 | エイブリック株式会社 | 半導体装置 |
-
2020
- 2020-12-01 JP JP2022566508A patent/JPWO2022118055A1/ja active Pending
- 2020-12-01 EP EP20963817.0A patent/EP4258363A4/en active Pending
- 2020-12-01 WO PCT/IB2020/000995 patent/WO2022118055A1/ja not_active Ceased
- 2020-12-01 CN CN202080107575.7A patent/CN116635984B/zh active Active
- 2020-12-01 US US18/039,610 patent/US11973108B2/en active Active
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