JP2024503422A5 - - Google Patents
Info
- Publication number
- JP2024503422A5 JP2024503422A5 JP2023542472A JP2023542472A JP2024503422A5 JP 2024503422 A5 JP2024503422 A5 JP 2024503422A5 JP 2023542472 A JP2023542472 A JP 2023542472A JP 2023542472 A JP2023542472 A JP 2023542472A JP 2024503422 A5 JP2024503422 A5 JP 2024503422A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- jfet
- channel region
- regions
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/248,160 | 2021-01-12 | ||
| US17/248,160 US11658214B2 (en) | 2021-01-12 | 2021-01-12 | MOSFET device with undulating channel |
| PCT/US2022/070083 WO2022155630A1 (en) | 2021-01-12 | 2022-01-07 | Mosfet device with undulating channel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024503422A JP2024503422A (ja) | 2024-01-25 |
| JP2024503422A5 true JP2024503422A5 (https=) | 2025-01-16 |
Family
ID=80445790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023542472A Pending JP2024503422A (ja) | 2021-01-12 | 2022-01-07 | 波状チャネルを備えたｍｏｓｆｅｔデバイス |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US11658214B2 (https=) |
| EP (1) | EP4252284A1 (https=) |
| JP (1) | JP2024503422A (https=) |
| KR (1) | KR20230128022A (https=) |
| CN (1) | CN116848640A (https=) |
| TW (1) | TW202316675A (https=) |
| WO (1) | WO2022155630A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12598781B2 (en) * | 2023-02-08 | 2026-04-07 | Ge Aviation Systems Llc | Semiconductor switching device |
| CN116504841B (zh) * | 2023-06-27 | 2023-10-03 | 无锡新洁能股份有限公司 | 一种高可靠性碳化硅mosfet器件及其形成方法 |
| WO2025064118A2 (en) * | 2023-08-17 | 2025-03-27 | The Regents Of The University Of California | Linear nitrogen-polar deep-recess gan mishemts through corrugation |
| CN117690951A (zh) * | 2023-12-19 | 2024-03-12 | 湖北九峰山实验室 | 一种宽禁带半导体平面mosfet器件结构及其制作方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5844277A (en) | 1996-02-20 | 1998-12-01 | Magepower Semiconductor Corp. | Power MOSFETs and cell topology |
| JP4627272B2 (ja) | 2006-03-09 | 2011-02-09 | 三菱電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
| US20100213517A1 (en) | 2007-10-19 | 2010-08-26 | Nxp B.V. | High voltage semiconductor device |
| JP5616665B2 (ja) * | 2010-03-30 | 2014-10-29 | ローム株式会社 | 半導体装置 |
| US8754469B2 (en) | 2010-10-26 | 2014-06-17 | Texas Instruments Incorporated | Hybrid active-field gap extended drain MOS transistor |
| JP2012160584A (ja) * | 2011-02-01 | 2012-08-23 | Sumitomo Electric Ind Ltd | 半導体装置 |
| WO2016013182A1 (ja) * | 2014-07-24 | 2016-01-28 | パナソニックＩｐマネジメント株式会社 | 炭化珪素半導体素子およびその製造方法 |
| US9716144B2 (en) * | 2014-12-19 | 2017-07-25 | General Electric Company | Semiconductor devices having channel regions with non-uniform edge |
| JP2015084444A (ja) * | 2014-12-24 | 2015-04-30 | 株式会社東芝 | 半導体装置 |
| KR102417367B1 (ko) | 2017-12-14 | 2022-07-05 | 현대자동차 주식회사 | 반도체 소자 |
| US10950695B1 (en) * | 2019-11-05 | 2021-03-16 | Semiq Incorporated | Silicon carbide planar MOSFET with wave-shaped channel regions |
-
2021
- 2021-01-12 US US17/248,160 patent/US11658214B2/en active Active
-
2022
- 2022-01-07 EP EP22703530.0A patent/EP4252284A1/en active Pending
- 2022-01-07 JP JP2023542472A patent/JP2024503422A/ja active Pending
- 2022-01-07 KR KR1020237023429A patent/KR20230128022A/ko not_active Ceased
- 2022-01-07 WO PCT/US2022/070083 patent/WO2022155630A1/en not_active Ceased
- 2022-01-07 CN CN202280014999.8A patent/CN116848640A/zh active Pending
- 2022-01-11 TW TW111101054A patent/TW202316675A/zh unknown
-
2023
- 2023-04-14 US US18/301,146 patent/US12125884B2/en active Active
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