TW202316675A - 具有起伏的通道之mosfet裝置 - Google Patents

具有起伏的通道之mosfet裝置 Download PDF

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Publication number
TW202316675A
TW202316675A TW111101054A TW111101054A TW202316675A TW 202316675 A TW202316675 A TW 202316675A TW 111101054 A TW111101054 A TW 111101054A TW 111101054 A TW111101054 A TW 111101054A TW 202316675 A TW202316675 A TW 202316675A
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TW
Taiwan
Prior art keywords
region
jfet
channel
channel region
regions
Prior art date
Application number
TW111101054A
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English (en)
Chinese (zh)
Inventor
曹圭憲
李峯龍
朴慶錫
崔杜溱
湯瑪士 奈爾
金奇玟
Original Assignee
美商半導體元件工業有限責任公司
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Application filed by 美商半導體元件工業有限責任公司 filed Critical 美商半導體元件工業有限責任公司
Publication of TW202316675A publication Critical patent/TW202316675A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/159—Shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW111101054A 2021-01-12 2022-01-11 具有起伏的通道之mosfet裝置 TW202316675A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/248,160 2021-01-12
US17/248,160 US11658214B2 (en) 2021-01-12 2021-01-12 MOSFET device with undulating channel

Publications (1)

Publication Number Publication Date
TW202316675A true TW202316675A (zh) 2023-04-16

Family

ID=80445790

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111101054A TW202316675A (zh) 2021-01-12 2022-01-11 具有起伏的通道之mosfet裝置

Country Status (7)

Country Link
US (2) US11658214B2 (https=)
EP (1) EP4252284A1 (https=)
JP (1) JP2024503422A (https=)
KR (1) KR20230128022A (https=)
CN (1) CN116848640A (https=)
TW (1) TW202316675A (https=)
WO (1) WO2022155630A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116504841A (zh) * 2023-06-27 2023-07-28 无锡新洁能股份有限公司 一种高可靠性碳化硅mosfet器件及其形成方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12598781B2 (en) * 2023-02-08 2026-04-07 Ge Aviation Systems Llc Semiconductor switching device
WO2025064118A2 (en) * 2023-08-17 2025-03-27 The Regents Of The University Of California Linear nitrogen-polar deep-recess gan mishemts through corrugation
CN117690951A (zh) * 2023-12-19 2024-03-12 湖北九峰山实验室 一种宽禁带半导体平面mosfet器件结构及其制作方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5844277A (en) 1996-02-20 1998-12-01 Magepower Semiconductor Corp. Power MOSFETs and cell topology
JP4627272B2 (ja) 2006-03-09 2011-02-09 三菱電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US20100213517A1 (en) 2007-10-19 2010-08-26 Nxp B.V. High voltage semiconductor device
JP5616665B2 (ja) * 2010-03-30 2014-10-29 ローム株式会社 半導体装置
US8754469B2 (en) 2010-10-26 2014-06-17 Texas Instruments Incorporated Hybrid active-field gap extended drain MOS transistor
JP2012160584A (ja) * 2011-02-01 2012-08-23 Sumitomo Electric Ind Ltd 半導体装置
WO2016013182A1 (ja) * 2014-07-24 2016-01-28 パナソニックＩｐマネジメント株式会社 炭化珪素半導体素子およびその製造方法
US9716144B2 (en) * 2014-12-19 2017-07-25 General Electric Company Semiconductor devices having channel regions with non-uniform edge
JP2015084444A (ja) * 2014-12-24 2015-04-30 株式会社東芝 半導体装置
KR102417367B1 (ko) 2017-12-14 2022-07-05 현대자동차 주식회사 반도체 소자
US10950695B1 (en) * 2019-11-05 2021-03-16 Semiq Incorporated Silicon carbide planar MOSFET with wave-shaped channel regions

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116504841A (zh) * 2023-06-27 2023-07-28 无锡新洁能股份有限公司 一种高可靠性碳化硅mosfet器件及其形成方法
CN116504841B (zh) * 2023-06-27 2023-10-03 无锡新洁能股份有限公司 一种高可靠性碳化硅mosfet器件及其形成方法

Also Published As

Publication number Publication date
KR20230128022A (ko) 2023-09-01
JP2024503422A (ja) 2024-01-25
CN116848640A (zh) 2023-10-03
EP4252284A1 (en) 2023-10-04
US12125884B2 (en) 2024-10-22
US20220223691A1 (en) 2022-07-14
US11658214B2 (en) 2023-05-23
WO2022155630A1 (en) 2022-07-21
US20230253460A1 (en) 2023-08-10

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