JP2010245369A - Ldmosトランジスタ及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000010410 layer Substances 0.000 claims abstract description 472
- 239000002344 surface layer Substances 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000012535 impurity Substances 0.000 claims description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 210000000746 body region Anatomy 0.000 claims description 6
- 230000015556 catabolic process Effects 0.000 abstract description 29
- 239000000758 substrate Substances 0.000 description 53
- 238000009792 diffusion process Methods 0.000 description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 238000009826 distribution Methods 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 16
- 238000010586 diagram Methods 0.000 description 16
- 229910052698 phosphorus Inorganic materials 0.000 description 16
- 239000011574 phosphorus Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 11
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 229910052785 arsenic Inorganic materials 0.000 description 9
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000012447 hatching Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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Abstract
オン耐圧を向上させたLDMOSトランジスタ及びその製造方法を提供することを課題とする。
【解決手段】
第1導電型の半導体層の表層部に形成される第2導電型のボディ層と、前記ボディ層の表層部に形成される第1導電型のソース領域と、前記半導体層の表層部に形成され、前記ボディ層に接続される第1導電型のドリフト層と、前記ドリフト層の表層部に形成される第1導電型のドレイン領域と、前記ボディ層と前記ドリフト層の表層部に形成され、前記ソース領域に接続されるゲート酸化層と、前記ドリフト層の表層部に形成され、前記ゲート酸化層及び前記ドレイン領域に接続されるLOCOS酸化層と、前記ボディ層に一端が接続され、他端が前記ドレイン領域の方向に延伸して、前記半導体層と前記ドリフト層の間に形成されるボトム領域とを含む。
【選択図】図7
Description
を含む。
図7は、実施の形態1のLDMOSトランジスタの断面構造を示す図である。
図10は、実施の形態2のLDMOSトランジスタの断面構造を示す図である。
100 シリコン基板
101 ボックス層
102 n+埋め込み層
103 n−型活性層
130 ゲート酸化膜
131 LOCOS酸化膜
132 サイドウォール
133 ゲートポリサイド電極
210 pボディ層
211 LVPW
212 n+ソース領域
213 p+ボディ拡散層
220 n−ドリフト層
220A nドリフト層
221 LVNW
222 n+ドレイン領域
300 pボトム層
400 ボトム酸化層
Claims (7)
- 第1導電型の半導体層の表層部に形成される第2導電型のボディ層と、
前記ボディ層の表層部に形成される第1導電型のソース領域と、
前記半導体層の表層部に形成され、前記ボディ層に接続される第1導電型のドリフト層と、
前記ドリフト層の表層部に形成される第1導電型のドレイン領域と、
前記ボディ層と前記ドリフト層の表層部に形成され、前記ソース領域に接続されるゲート酸化層と、
前記ドリフト層の表層部に形成され、前記ゲート酸化層及び前記ドレイン領域に接続されるLOCOS酸化層と、
前記ボディ層に一端が接続され、他端が前記ドレイン領域の方向に延伸して、前記半導体層と前記ドリフト層の間に形成されるボトム領域と
を含む、LDMOSトランジスタ。 - 前記ドリフト層は、横方向において、前記ボディ層側に形成される第1ドリフト層と、前記第1ドリフト層よりも前記ドレイン領域側に形成され、前記第1ドリフト層よりも不純物濃度の高い第2ドリフト層とを有する、請求項1に記載のLDMOSトランジスタ。
- 前記第1ドリフト層及び前記ボトム領域は、同一のマスクを用いて形成される、請求項2に記載のLDMOSトランジスタ。
- 前記ボトム領域は、第2導電型の半導体領域である、請求項1乃至3のいずれか一項に記載のLDMOSトランジスタ。
- 前記ボトム領域は、シリコン酸化層である、請求項1乃至3のいずれか一項に記載のLDMOSトランジスタ。
- 前記ボトム領域の前記他端は、横方向において、前記ゲート酸化層と前記LOCOS酸化層の上に形成されるゲート電極の前記ドレイン領域側の端部と同程度の位置まで延伸される、請求項1乃至5のいずれか一項に記載のLDMOSトランジスタ。
- 第1導電型半導体層の上にLOCOS酸化層を形成する工程と、
平面視で前記LOCOS酸化層の一端側から離間した領域内で前記半導体層の表層部に第2導電型のボディ領域を形成する工程と、
前記ボディ領域の表層部に第1導電型のソース領域を形成する工程と、
前記ボディ領域に隣接する領域内で前記半導体層の表層部に第1導電型のドリフト領域を形成する工程と、
前記ドリフト領域の表層部のうち、前記LOCOS酸化層の他端に接する領域内に第1導電型のドレイン領域を形成する工程と、
前記半導体層と前記ドリフト層の間に、前記ボディ層に一端が接続され、他端が前記ドレイン領域の方向に延伸するボトム領域を形成する工程と、
を含む、LDMOSトランジスタの製造方法。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013115166A (ja) * | 2011-11-28 | 2013-06-10 | Renesas Electronics Corp | 半導体装置 |
US8674436B2 (en) | 2011-11-22 | 2014-03-18 | Hyundai Motor Company | Lateral double diffusion metal-oxide semiconductor device and method for manufacturing the same |
JP2016046318A (ja) * | 2014-08-20 | 2016-04-04 | 株式会社デンソー | 半導体装置 |
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JPH0897411A (ja) * | 1994-09-21 | 1996-04-12 | Fuji Electric Co Ltd | 横型高耐圧トレンチmosfetおよびその製造方法 |
JP2000022142A (ja) * | 1998-06-29 | 2000-01-21 | Denso Corp | 半導体装置及び半導体装置の製造方法 |
JP2000031290A (ja) * | 1998-07-10 | 2000-01-28 | Nissan Motor Co Ltd | 半導体装置 |
JP2001352070A (ja) * | 2000-04-07 | 2001-12-21 | Denso Corp | 半導体装置およびその製造方法 |
JP2005228906A (ja) * | 2004-02-13 | 2005-08-25 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US6979875B2 (en) * | 2002-05-09 | 2005-12-27 | Fairchild Korea Semiconductor Ltd. | Reduced surface field technique for semiconductor devices |
JP2009059949A (ja) * | 2007-08-31 | 2009-03-19 | Sharp Corp | 半導体装置、および、半導体装置の製造方法 |
JP2009060064A (ja) * | 2007-09-04 | 2009-03-19 | New Japan Radio Co Ltd | 半導体装置及びその製造方法 |
-
2009
- 2009-04-08 JP JP2009093745A patent/JP2010245369A/ja active Pending
Patent Citations (8)
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---|---|---|---|---|
JPH0897411A (ja) * | 1994-09-21 | 1996-04-12 | Fuji Electric Co Ltd | 横型高耐圧トレンチmosfetおよびその製造方法 |
JP2000022142A (ja) * | 1998-06-29 | 2000-01-21 | Denso Corp | 半導体装置及び半導体装置の製造方法 |
JP2000031290A (ja) * | 1998-07-10 | 2000-01-28 | Nissan Motor Co Ltd | 半導体装置 |
JP2001352070A (ja) * | 2000-04-07 | 2001-12-21 | Denso Corp | 半導体装置およびその製造方法 |
US6979875B2 (en) * | 2002-05-09 | 2005-12-27 | Fairchild Korea Semiconductor Ltd. | Reduced surface field technique for semiconductor devices |
JP2005228906A (ja) * | 2004-02-13 | 2005-08-25 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2009059949A (ja) * | 2007-08-31 | 2009-03-19 | Sharp Corp | 半導体装置、および、半導体装置の製造方法 |
JP2009060064A (ja) * | 2007-09-04 | 2009-03-19 | New Japan Radio Co Ltd | 半導体装置及びその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8674436B2 (en) | 2011-11-22 | 2014-03-18 | Hyundai Motor Company | Lateral double diffusion metal-oxide semiconductor device and method for manufacturing the same |
JP2013115166A (ja) * | 2011-11-28 | 2013-06-10 | Renesas Electronics Corp | 半導体装置 |
JP2016046318A (ja) * | 2014-08-20 | 2016-04-04 | 株式会社デンソー | 半導体装置 |
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