JPWO2022058838A5 - - Google Patents

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Publication number
JPWO2022058838A5
JPWO2022058838A5 JP2022550049A JP2022550049A JPWO2022058838A5 JP WO2022058838 A5 JPWO2022058838 A5 JP WO2022058838A5 JP 2022550049 A JP2022550049 A JP 2022550049A JP 2022550049 A JP2022550049 A JP 2022550049A JP WO2022058838 A5 JPWO2022058838 A5 JP WO2022058838A5
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JP
Japan
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transistor
gate
drain
source
electrode
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JP2022550049A
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English (en)
Japanese (ja)
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JPWO2022058838A1 (https=
JP7717080B2 (ja
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Priority claimed from PCT/IB2021/058112 external-priority patent/WO2022058838A1/ja
Publication of JPWO2022058838A1 publication Critical patent/JPWO2022058838A1/ja
Publication of JPWO2022058838A5 publication Critical patent/JPWO2022058838A5/ja
Priority to JP2025122430A priority Critical patent/JP2025163069A/ja
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Publication of JP7717080B2 publication Critical patent/JP7717080B2/ja
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JP2022550049A 2020-09-18 2021-09-07 半導体装置、および電子機器 Active JP7717080B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025122430A JP2025163069A (ja) 2020-09-18 2025-07-22 半導体装置

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2020157610 2020-09-18
JP2020157607 2020-09-18
JP2020157610 2020-09-18
JP2020157607 2020-09-18
JP2020157570 2020-09-18
JP2020157570 2020-09-18
PCT/IB2021/058112 WO2022058838A1 (ja) 2020-09-18 2021-09-07 半導体装置、および電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025122430A Division JP2025163069A (ja) 2020-09-18 2025-07-22 半導体装置

Publications (3)

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JPWO2022058838A1 JPWO2022058838A1 (https=) 2022-03-24
JPWO2022058838A5 true JPWO2022058838A5 (https=) 2024-08-20
JP7717080B2 JP7717080B2 (ja) 2025-08-01

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ID=80775963

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JP2022550049A Active JP7717080B2 (ja) 2020-09-18 2021-09-07 半導体装置、および電子機器
JP2025122430A Pending JP2025163069A (ja) 2020-09-18 2025-07-22 半導体装置

Family Applications After (1)

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JP2025122430A Pending JP2025163069A (ja) 2020-09-18 2025-07-22 半導体装置

Country Status (5)

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US (2) US12205625B2 (https=)
JP (2) JP7717080B2 (https=)
KR (1) KR20230069145A (https=)
CN (1) CN116194926A (https=)
WO (1) WO2022058838A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12481867B2 (en) * 2021-04-28 2025-11-25 Arm Limited Memory for artificial neural network accelerator
JP7660532B2 (ja) * 2022-02-25 2025-04-11 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6101117A (en) 1999-03-22 2000-08-08 International Business Machines Corporation Two transistor single capacitor ferroelectric memory
JP2003092533A (ja) * 2001-09-18 2003-03-28 Matsushita Electric Ind Co Ltd 半導体回路及びその駆動方法
JP2008153479A (ja) * 2006-12-19 2008-07-03 Rohm Co Ltd 強誘電体電界効果トランジスタを備える半導体装置及びこれを用いた半導体集積回路装置
JP2011142136A (ja) 2010-01-05 2011-07-21 Fujitsu Ltd 電界効果型トランジスタ及びこれを用いた論理回路
CA2928042C (en) * 2013-10-25 2022-05-10 Blueprint Medicines Corporation Inhibitors of the fibroblast growth factor receptor
JP2017108397A (ja) * 2015-11-30 2017-06-15 株式会社半導体エネルギー研究所 信号処理回路、及び該信号処理回路を有する半導体装置
CN108701480B (zh) 2016-03-10 2022-10-14 株式会社半导体能源研究所 半导体装置
US10236875B2 (en) * 2016-04-15 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for operating the semiconductor device
KR102367787B1 (ko) * 2016-06-30 2022-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 동작 방법
JP2018195366A (ja) 2017-05-19 2018-12-06 ソニーセミコンダクタソリューションズ株式会社 半導体回路、駆動方法、および電子機器
KR20240152426A (ko) * 2018-03-29 2024-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치 및 전자 기기
WO2020104891A1 (ja) * 2018-11-22 2020-05-28 株式会社半導体エネルギー研究所 半導体装置、蓄電装置、及び電子機器
JP7273064B2 (ja) * 2018-12-19 2023-05-12 株式会社半導体エネルギー研究所 ヒステリシスコンパレータ、半導体装置、及び蓄電装置
US12585431B2 (en) * 2019-12-27 2026-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR20230039668A (ko) * 2020-07-17 2023-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US20230352477A1 (en) * 2020-08-03 2023-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN115769497A (zh) * 2020-08-03 2023-03-07 株式会社半导体能源研究所 半导体装置
JP7596386B2 (ja) * 2020-08-03 2024-12-09 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US12170519B2 (en) * 2021-07-07 2024-12-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2023047224A1 (ja) * 2021-09-21 2023-03-30 株式会社半導体エネルギー研究所 半導体装置

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