JPWO2020240311A5 - - Google Patents

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Publication number
JPWO2020240311A5
JPWO2020240311A5 JP2021523120A JP2021523120A JPWO2020240311A5 JP WO2020240311 A5 JPWO2020240311 A5 JP WO2020240311A5 JP 2021523120 A JP2021523120 A JP 2021523120A JP 2021523120 A JP2021523120 A JP 2021523120A JP WO2020240311 A5 JPWO2020240311 A5 JP WO2020240311A5
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JP
Japan
Prior art keywords
transistor
electrically connected
source
drain
terminal
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JP2021523120A
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English (en)
Japanese (ja)
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JP7725364B2 (ja
JPWO2020240311A1 (https=
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Priority claimed from PCT/IB2020/054412 external-priority patent/WO2020240311A1/ja
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Publication of JPWO2020240311A5 publication Critical patent/JPWO2020240311A5/ja
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Publication of JP7725364B2 publication Critical patent/JP7725364B2/ja
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JP2021523120A 2019-05-24 2020-05-11 半導体装置および電子機器 Active JP7725364B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2019097502 2019-05-24
JP2019097502 2019-05-24
JP2019100889 2019-05-30
JP2019100889 2019-05-30
JP2019102131 2019-05-31
JP2019102131 2019-05-31
JP2019115159 2019-06-21
JP2019115159 2019-06-21
PCT/IB2020/054412 WO2020240311A1 (ja) 2019-05-24 2020-05-11 半導体装置および電子機器

Publications (3)

Publication Number Publication Date
JPWO2020240311A1 JPWO2020240311A1 (https=) 2020-12-03
JPWO2020240311A5 true JPWO2020240311A5 (https=) 2023-05-17
JP7725364B2 JP7725364B2 (ja) 2025-08-19

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Family Applications (1)

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JP2021523120A Active JP7725364B2 (ja) 2019-05-24 2020-05-11 半導体装置および電子機器

Country Status (5)

Country Link
US (1) US12389650B2 (https=)
JP (1) JP7725364B2 (https=)
KR (1) KR20220012268A (https=)
CN (1) CN113875152A (https=)
WO (1) WO2020240311A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113785346A (zh) * 2019-05-10 2021-12-10 株式会社半导体能源研究所 显示装置
US12113115B2 (en) 2021-02-09 2024-10-08 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same
US11984508B2 (en) * 2021-02-24 2024-05-14 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a compositionally-modulated active region and methods for forming the same
US12199188B2 (en) * 2021-04-09 2025-01-14 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a compositionally-modulated active region and methods for forming the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1187890C (zh) 1998-07-07 2005-02-02 松下电器产业株式会社 半导体放大器电路与系统
JP2003078355A (ja) * 2001-09-05 2003-03-14 Mitsubishi Electric Corp ミキサ回路
EP2434366B1 (en) 2010-09-27 2019-04-17 Semiconductor Energy Laboratory Co, Ltd. Reference current generating circuit, reference voltage generating circuit, and temperature detection circuit
TWI552150B (zh) 2011-05-18 2016-10-01 半導體能源研究所股份有限公司 半導體儲存裝置
US8995158B2 (en) * 2012-07-11 2015-03-31 Infineon Technologies Dresden Gmbh Circuit arrangement with a rectifier circuit
US9343288B2 (en) 2013-07-31 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6460592B2 (ja) 2013-07-31 2019-01-30 株式会社半導体エネルギー研究所 Dcdcコンバータ、及び半導体装置
KR20150104518A (ko) 2014-03-05 2015-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레벨 시프터 회로
EP3123507A4 (en) 2014-03-27 2017-12-06 Intel Corporation Multi-device flexible electronics system on a chip (soc) process integration
KR20170095638A (ko) 2016-02-15 2017-08-23 한양대학교 에리카산학협력단 전력 변환 시스템
JP7704677B2 (ja) 2019-05-31 2025-07-08 株式会社半導体エネルギー研究所 通信装置
US11848697B2 (en) 2019-06-07 2023-12-19 Semiconductor Energy Laboratory Co., Ltd. Communication device and electronic device
JP7536759B2 (ja) 2019-06-07 2024-08-20 株式会社半導体エネルギー研究所 半導体装置

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