JPWO2020128673A5 - - Google Patents

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Publication number
JPWO2020128673A5
JPWO2020128673A5 JP2020560633A JP2020560633A JPWO2020128673A5 JP WO2020128673 A5 JPWO2020128673 A5 JP WO2020128673A5 JP 2020560633 A JP2020560633 A JP 2020560633A JP 2020560633 A JP2020560633 A JP 2020560633A JP WO2020128673 A5 JPWO2020128673 A5 JP WO2020128673A5
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JP
Japan
Prior art keywords
transistor
source
drain
electrically connected
signal
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Granted
Application number
JP2020560633A
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English (en)
Japanese (ja)
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JP7303828B2 (ja
JPWO2020128673A1 (ja
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Priority claimed from PCT/IB2019/059860 external-priority patent/WO2020128673A1/ja
Publication of JPWO2020128673A1 publication Critical patent/JPWO2020128673A1/ja
Publication of JPWO2020128673A5 publication Critical patent/JPWO2020128673A5/ja
Priority to JP2023103042A priority Critical patent/JP2023140355A/ja
Application granted granted Critical
Publication of JP7303828B2 publication Critical patent/JP7303828B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2020560633A 2018-12-21 2019-11-18 半導体装置、並びに電子機器及び人工衛星 Active JP7303828B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023103042A JP2023140355A (ja) 2018-12-21 2023-06-23 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018239966 2018-12-21
JP2018239966 2018-12-21
JP2019006545 2019-01-18
JP2019006545 2019-01-18
PCT/IB2019/059860 WO2020128673A1 (ja) 2018-12-21 2019-11-18 半導体装置、並びに電子機器及び人工衛星

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023103042A Division JP2023140355A (ja) 2018-12-21 2023-06-23 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2020128673A1 JPWO2020128673A1 (ja) 2021-12-16
JPWO2020128673A5 true JPWO2020128673A5 (https=) 2022-11-08
JP7303828B2 JP7303828B2 (ja) 2023-07-05

Family

ID=71100676

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020560633A Active JP7303828B2 (ja) 2018-12-21 2019-11-18 半導体装置、並びに電子機器及び人工衛星
JP2023103042A Withdrawn JP2023140355A (ja) 2018-12-21 2023-06-23 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023103042A Withdrawn JP2023140355A (ja) 2018-12-21 2023-06-23 半導体装置

Country Status (4)

Country Link
US (1) US11899478B2 (https=)
JP (2) JP7303828B2 (https=)
KR (1) KR102841341B1 (https=)
WO (1) WO2020128673A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113330555A (zh) * 2019-01-29 2021-08-31 株式会社半导体能源研究所 摄像装置及电子设备
US11935887B2 (en) * 2019-03-28 2024-03-19 Intel Corporation Source or drain structures with vertical trenches
JPWO2022018560A1 (https=) 2020-07-24 2022-01-27

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11224496A (ja) 1998-02-06 1999-08-17 Kawasaki Steel Corp サンプルホールド回路
JP4627932B2 (ja) 2001-07-13 2011-02-09 パナソニック株式会社 電圧降圧回路
JP3790242B2 (ja) * 2003-09-26 2006-06-28 株式会社東芝 半導体装置及びその製造方法
JP2005182494A (ja) 2003-12-19 2005-07-07 Mitsubishi Electric Corp 電流増幅回路およびそれを備える液晶表示装置
JP4700317B2 (ja) * 2004-09-30 2011-06-15 株式会社半導体エネルギー研究所 表示装置の作製方法
JP5078246B2 (ja) * 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP5169039B2 (ja) * 2007-06-29 2013-03-27 Ｎｅｃ東芝スペースシステム株式会社 Ｄｃ‐ｄｃコンバータ
JP4739382B2 (ja) * 2008-09-11 2011-08-03 富士通セミコンダクター株式会社 電圧供給回路および半導体メモリ
US8363374B2 (en) 2010-12-12 2013-01-29 The Boeing Company Synchronous rectified switch with auto fault clearing
US20120194151A1 (en) * 2011-01-28 2012-08-02 Nxp B.V. Standby current reduction through a switching arrangement with multiple regulators
WO2012157463A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5975907B2 (ja) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
JP5898589B2 (ja) 2012-08-10 2016-04-06 株式会社東芝 Ｄｃ−ｄｃコンバータの制御回路およびｄｃ−ｄｃコンバータ
US9374048B2 (en) 2013-08-20 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing device, and driving method and program thereof
US10250247B2 (en) * 2016-02-10 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
WO2018104824A1 (en) * 2016-12-07 2018-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display system, and electronic device
TWI657328B (zh) * 2017-11-28 2019-04-21 立積電子股份有限公司 低壓降穩壓器及電源輸出裝置

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