KR102841341B1 - 반도체 장치, 그리고 전자 기기 및 인공위성 - Google Patents

반도체 장치, 그리고 전자 기기 및 인공위성

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Publication number
KR102841341B1
KR102841341B1 KR1020217018620A KR20217018620A KR102841341B1 KR 102841341 B1 KR102841341 B1 KR 102841341B1 KR 1020217018620 A KR1020217018620 A KR 1020217018620A KR 20217018620 A KR20217018620 A KR 20217018620A KR 102841341 B1 KR102841341 B1 KR 102841341B1
Authority
KR
South Korea
Prior art keywords
transistor
oxide
insulator
potential
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217018620A
Other languages
English (en)
Korean (ko)
Other versions
KR20210107000A (ko
Inventor
게이타 사토
유토 야쿠보
요시아키 오이카와
슌페이 야마자키
šœ페이 야마자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20210107000A publication Critical patent/KR20210107000A/ko
Application granted granted Critical
Publication of KR102841341B1 publication Critical patent/KR102841341B1/ko
Active legal-status Critical Current
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B64—AIRCRAFT; AVIATION; COSMONAUTICS
    • B64G—COSMONAUTICS; VEHICLES OR EQUIPMENT THEREFOR
    • B64G1/00—Cosmonautic vehicles
    • B64G1/22—Parts of, or equipment specially adapted for fitting in or to, cosmonautic vehicles
    • B64G1/42—Arrangements or adaptations of power supply systems
    • B64G1/44—Arrangements or adaptations of power supply systems using radiation, e.g. deployable solar arrays
    • B64G1/443—Photovoltaic cell arrays
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/59—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load
    • G05F1/595—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load semiconductor devices connected in series
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B64—AIRCRAFT; AVIATION; COSMONAUTICS
    • B64G—COSMONAUTICS; VEHICLES OR EQUIPMENT THEREFOR
    • B64G1/00—Cosmonautic vehicles
    • B64G1/22—Parts of, or equipment specially adapted for fitting in or to, cosmonautic vehicles
    • B64G1/66—Arrangements or adaptations of apparatus or instruments, not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Remote Sensing (AREA)
  • Aviation & Aerospace Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020217018620A 2018-12-21 2019-11-18 반도체 장치, 그리고 전자 기기 및 인공위성 Active KR102841341B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018239966 2018-12-21
JPJP-P-2018-239966 2018-12-21
JP2019006545 2019-01-18
JPJP-P-2019-006545 2019-01-18
PCT/IB2019/059860 WO2020128673A1 (ja) 2018-12-21 2019-11-18 半導体装置、並びに電子機器及び人工衛星

Publications (2)

Publication Number Publication Date
KR20210107000A KR20210107000A (ko) 2021-08-31
KR102841341B1 true KR102841341B1 (ko) 2025-07-31

Family

ID=71100676

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217018620A Active KR102841341B1 (ko) 2018-12-21 2019-11-18 반도체 장치, 그리고 전자 기기 및 인공위성

Country Status (4)

Country Link
US (1) US11899478B2 (https=)
JP (2) JP7303828B2 (https=)
KR (1) KR102841341B1 (https=)
WO (1) WO2020128673A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113330555A (zh) * 2019-01-29 2021-08-31 株式会社半导体能源研究所 摄像装置及电子设备
US11935887B2 (en) * 2019-03-28 2024-03-19 Intel Corporation Source or drain structures with vertical trenches
JPWO2022018560A1 (https=) 2020-07-24 2022-01-27

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003029854A (ja) 2001-07-13 2003-01-31 Matsushita Electric Ind Co Ltd 電圧降圧回路
JP2009032278A (ja) * 2008-09-11 2009-02-12 Fujitsu Microelectronics Ltd 電圧供給回路および半導体メモリ
JP2013235564A (ja) 2012-04-11 2013-11-21 Semiconductor Energy Lab Co Ltd 半導体装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11224496A (ja) 1998-02-06 1999-08-17 Kawasaki Steel Corp サンプルホールド回路
JP3790242B2 (ja) * 2003-09-26 2006-06-28 株式会社東芝 半導体装置及びその製造方法
JP2005182494A (ja) 2003-12-19 2005-07-07 Mitsubishi Electric Corp 電流増幅回路およびそれを備える液晶表示装置
JP4700317B2 (ja) * 2004-09-30 2011-06-15 株式会社半導体エネルギー研究所 表示装置の作製方法
JP5078246B2 (ja) * 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP5169039B2 (ja) * 2007-06-29 2013-03-27 Ｎｅｃ東芝スペースシステム株式会社 Ｄｃ‐ｄｃコンバータ
US8363374B2 (en) 2010-12-12 2013-01-29 The Boeing Company Synchronous rectified switch with auto fault clearing
US20120194151A1 (en) * 2011-01-28 2012-08-02 Nxp B.V. Standby current reduction through a switching arrangement with multiple regulators
WO2012157463A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5898589B2 (ja) 2012-08-10 2016-04-06 株式会社東芝 Ｄｃ−ｄｃコンバータの制御回路およびｄｃ−ｄｃコンバータ
US9374048B2 (en) 2013-08-20 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing device, and driving method and program thereof
US10250247B2 (en) * 2016-02-10 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
WO2018104824A1 (en) * 2016-12-07 2018-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display system, and electronic device
TWI657328B (zh) * 2017-11-28 2019-04-21 立積電子股份有限公司 低壓降穩壓器及電源輸出裝置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003029854A (ja) 2001-07-13 2003-01-31 Matsushita Electric Ind Co Ltd 電圧降圧回路
JP2009032278A (ja) * 2008-09-11 2009-02-12 Fujitsu Microelectronics Ltd 電圧供給回路および半導体メモリ
JP2013235564A (ja) 2012-04-11 2013-11-21 Semiconductor Energy Lab Co Ltd 半導体装置

Also Published As

Publication number Publication date
US20220052663A1 (en) 2022-02-17
KR20210107000A (ko) 2021-08-31
JP7303828B2 (ja) 2023-07-05
US11899478B2 (en) 2024-02-13
JP2023140355A (ja) 2023-10-04
WO2020128673A1 (ja) 2020-06-25
JPWO2020128673A1 (ja) 2021-12-16

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