JPWO2020217138A5 - - Google Patents

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Publication number
JPWO2020217138A5
JPWO2020217138A5 JP2021515316A JP2021515316A JPWO2020217138A5 JP WO2020217138 A5 JPWO2020217138 A5 JP WO2020217138A5 JP 2021515316 A JP2021515316 A JP 2021515316A JP 2021515316 A JP2021515316 A JP 2021515316A JP WO2020217138 A5 JPWO2020217138 A5 JP WO2020217138A5
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JP
Japan
Prior art keywords
transistor
wiring
potential
circuit
switch
Prior art date
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Application number
JP2021515316A
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English (en)
Japanese (ja)
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JP7457006B2 (ja
JPWO2020217138A1 (https=
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Priority claimed from PCT/IB2020/053526 external-priority patent/WO2020217138A2/ja
Publication of JPWO2020217138A1 publication Critical patent/JPWO2020217138A1/ja
Publication of JPWO2020217138A5 publication Critical patent/JPWO2020217138A5/ja
Application granted granted Critical
Publication of JP7457006B2 publication Critical patent/JP7457006B2/ja
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JP2021515316A 2019-04-26 2020-04-15 半導体装置、及び半導体装置の動作方法 Active JP7457006B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019085084 2019-04-26
JP2019085084 2019-04-26
PCT/IB2020/053526 WO2020217138A2 (ja) 2019-04-26 2020-04-15 半導体装置、及び半導体装置の動作方法

Publications (3)

Publication Number Publication Date
JPWO2020217138A1 JPWO2020217138A1 (https=) 2020-10-29
JPWO2020217138A5 true JPWO2020217138A5 (https=) 2023-04-06
JP7457006B2 JP7457006B2 (ja) 2024-03-27

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ID=72941602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021515316A Active JP7457006B2 (ja) 2019-04-26 2020-04-15 半導体装置、及び半導体装置の動作方法

Country Status (3)

Country Link
US (1) US11984147B2 (https=)
JP (1) JP7457006B2 (https=)
WO (1) WO2020217138A2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12069846B2 (en) * 2019-01-29 2024-08-20 Semiconductor Energy Laboratory Co., Ltd. Memory device
TWI842855B (zh) * 2019-03-29 2024-05-21 日商半導體能源研究所股份有限公司 半導體裝置
WO2023148571A1 (ja) * 2022-02-04 2023-08-10 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63149900A (ja) 1986-12-15 1988-06-22 Toshiba Corp 半導体メモリ
JPH01192083A (ja) * 1988-01-27 1989-08-02 Matsushita Electric Ind Co Ltd 半導体メモリ
KR101698193B1 (ko) 2009-09-15 2017-01-19 삼성전자주식회사 3차원 반도체 메모리 장치 및 그 제조 방법
US9177872B2 (en) 2011-09-16 2015-11-03 Micron Technology, Inc. Memory cells, semiconductor devices, systems including such cells, and methods of fabrication
TWI695375B (zh) 2014-04-10 2020-06-01 日商半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
US9634097B2 (en) 2014-11-25 2017-04-25 Sandisk Technologies Llc 3D NAND with oxide semiconductor channel
JP6935171B2 (ja) 2015-05-14 2021-09-15 株式会社半導体エネルギー研究所 半導体装置
JP7080231B2 (ja) 2017-06-27 2022-06-03 株式会社半導体エネルギー研究所 半導体装置

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