KR20220012268A - 반도체 장치 및 전자 기기 - Google Patents

반도체 장치 및 전자 기기 Download PDF

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Publication number
KR20220012268A
KR20220012268A KR1020217040718A KR20217040718A KR20220012268A KR 20220012268 A KR20220012268 A KR 20220012268A KR 1020217040718 A KR1020217040718 A KR 1020217040718A KR 20217040718 A KR20217040718 A KR 20217040718A KR 20220012268 A KR20220012268 A KR 20220012268A
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South Korea
Prior art keywords
transistor
oxide
insulator
semiconductor device
conductor
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KR1020217040718A
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Korean (ko)
Inventor
타카유키 이케다
히토시 쿠니타케
하지메 키무라
하루유키 바바
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20220012268A publication Critical patent/KR20220012268A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
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    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H—ELECTRICITY
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    • H01Q—ANTENNAS, i.e. RADIO AERIALS
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    • H—ELECTRICITY
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    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
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    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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    • H03—ELECTRONIC CIRCUITRY
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    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
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    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
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    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
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    • H10W80/00—Direct bonding of chips, wafers or substrates
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    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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    • H10D84/01—Manufacture or treatment
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    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
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    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020217040718A 2019-05-24 2020-05-11 반도체 장치 및 전자 기기 Pending KR20220012268A (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JPJP-P-2019-097502 2019-05-24
JP2019097502 2019-05-24
JPJP-P-2019-100889 2019-05-30
JP2019100889 2019-05-30
JPJP-P-2019-102131 2019-05-31
JP2019102131 2019-05-31
JP2019115159 2019-06-21
JPJP-P-2019-115159 2019-06-21
PCT/IB2020/054412 WO2020240311A1 (ja) 2019-05-24 2020-05-11 半導体装置および電子機器

Publications (1)

Publication Number Publication Date
KR20220012268A true KR20220012268A (ko) 2022-02-03

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KR1020217040718A Pending KR20220012268A (ko) 2019-05-24 2020-05-11 반도체 장치 및 전자 기기

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US (1) US12389650B2 (https=)
JP (1) JP7725364B2 (https=)
KR (1) KR20220012268A (https=)
CN (1) CN113875152A (https=)
WO (1) WO2020240311A1 (https=)

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JPWO2020229917A1 (https=) 2019-05-10 2020-11-19
US12113115B2 (en) 2021-02-09 2024-10-08 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same
US11984508B2 (en) * 2021-02-24 2024-05-14 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a compositionally-modulated active region and methods for forming the same
US12199188B2 (en) * 2021-04-09 2025-01-14 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a compositionally-modulated active region and methods for forming the same

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KR101911367B1 (ko) 2010-09-27 2018-10-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기준 전류 생성 회로, 기준 전압 생성 회로, 및 온도 검출 회로
TWI552150B (zh) 2011-05-18 2016-10-01 半導體能源研究所股份有限公司 半導體儲存裝置
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KR20150104518A (ko) 2014-03-05 2015-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레벨 시프터 회로
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