JPWO2022058838A1 - - Google Patents
Info
- Publication number
- JPWO2022058838A1 JPWO2022058838A1 JP2022550049A JP2022550049A JPWO2022058838A1 JP WO2022058838 A1 JPWO2022058838 A1 JP WO2022058838A1 JP 2022550049 A JP2022550049 A JP 2022550049A JP 2022550049 A JP2022550049 A JP 2022550049A JP WO2022058838 A1 JPWO2022058838 A1 JP WO2022058838A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06G—ANALOGUE COMPUTERS
- G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
- G06G7/48—Analogue computers for specific processes, systems or devices, e.g. simulators
- G06G7/60—Analogue computers for specific processes, systems or devices, e.g. simulators for living beings, e.g. their nervous systems ; for problems in the medical field
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2275—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2297—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/033—Manufacture or treatment of data-storage electrodes comprising ferroelectric layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Biomedical Technology (AREA)
- Theoretical Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Biophysics (AREA)
- General Health & Medical Sciences (AREA)
- Neurology (AREA)
- Molecular Biology (AREA)
- Mathematical Physics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Computational Linguistics (AREA)
- Data Mining & Analysis (AREA)
- Evolutionary Computation (AREA)
- Artificial Intelligence (AREA)
- Computing Systems (AREA)
- Software Systems (AREA)
- Physiology (AREA)
- Neurosurgery (AREA)
- Thin Film Transistor (AREA)
- Dram (AREA)
- Logic Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025122430A JP2025163069A (ja) | 2020-09-18 | 2025-07-22 | 半導体装置 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020157610 | 2020-09-18 | ||
| JP2020157607 | 2020-09-18 | ||
| JP2020157610 | 2020-09-18 | ||
| JP2020157607 | 2020-09-18 | ||
| JP2020157570 | 2020-09-18 | ||
| JP2020157570 | 2020-09-18 | ||
| PCT/IB2021/058112 WO2022058838A1 (ja) | 2020-09-18 | 2021-09-07 | 半導体装置、および電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025122430A Division JP2025163069A (ja) | 2020-09-18 | 2025-07-22 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022058838A1 true JPWO2022058838A1 (https=) | 2022-03-24 |
| JPWO2022058838A5 JPWO2022058838A5 (https=) | 2024-08-20 |
| JP7717080B2 JP7717080B2 (ja) | 2025-08-01 |
Family
ID=80775963
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022550049A Active JP7717080B2 (ja) | 2020-09-18 | 2021-09-07 | 半導体装置、および電子機器 |
| JP2025122430A Pending JP2025163069A (ja) | 2020-09-18 | 2025-07-22 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025122430A Pending JP2025163069A (ja) | 2020-09-18 | 2025-07-22 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US12205625B2 (https=) |
| JP (2) | JP7717080B2 (https=) |
| KR (1) | KR20230069145A (https=) |
| CN (1) | CN116194926A (https=) |
| WO (1) | WO2022058838A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12481867B2 (en) * | 2021-04-28 | 2025-11-25 | Arm Limited | Memory for artificial neural network accelerator |
| JP7660532B2 (ja) * | 2022-02-25 | 2025-04-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000323670A (ja) * | 1999-03-22 | 2000-11-24 | Internatl Business Mach Corp <Ibm> | ２トランジスタ単一キャパシタ強誘電性メモリ |
| JP2003092533A (ja) * | 2001-09-18 | 2003-03-28 | Matsushita Electric Ind Co Ltd | 半導体回路及びその駆動方法 |
| JP2011142136A (ja) * | 2010-01-05 | 2011-07-21 | Fujitsu Ltd | 電界効果型トランジスタ及びこれを用いた論理回路 |
| JP2018195366A (ja) * | 2017-05-19 | 2018-12-06 | ソニーセミコンダクタソリューションズ株式会社 | 半導体回路、駆動方法、および電子機器 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008153479A (ja) * | 2006-12-19 | 2008-07-03 | Rohm Co Ltd | 強誘電体電界効果トランジスタを備える半導体装置及びこれを用いた半導体集積回路装置 |
| CA2928042C (en) * | 2013-10-25 | 2022-05-10 | Blueprint Medicines Corporation | Inhibitors of the fibroblast growth factor receptor |
| JP2017108397A (ja) * | 2015-11-30 | 2017-06-15 | 株式会社半導体エネルギー研究所 | 信号処理回路、及び該信号処理回路を有する半導体装置 |
| CN108701480B (zh) | 2016-03-10 | 2022-10-14 | 株式会社半导体能源研究所 | 半导体装置 |
| US10236875B2 (en) * | 2016-04-15 | 2019-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for operating the semiconductor device |
| KR102367787B1 (ko) * | 2016-06-30 | 2022-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 동작 방법 |
| KR20240152426A (ko) * | 2018-03-29 | 2024-10-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치 및 전자 기기 |
| WO2020104891A1 (ja) * | 2018-11-22 | 2020-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置、蓄電装置、及び電子機器 |
| JP7273064B2 (ja) * | 2018-12-19 | 2023-05-12 | 株式会社半導体エネルギー研究所 | ヒステリシスコンパレータ、半導体装置、及び蓄電装置 |
| US12585431B2 (en) * | 2019-12-27 | 2026-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| KR20230039668A (ko) * | 2020-07-17 | 2023-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| US20230352477A1 (en) * | 2020-08-03 | 2023-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN115769497A (zh) * | 2020-08-03 | 2023-03-07 | 株式会社半导体能源研究所 | 半导体装置 |
| JP7596386B2 (ja) * | 2020-08-03 | 2024-12-09 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| US12170519B2 (en) * | 2021-07-07 | 2024-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2023047224A1 (ja) * | 2021-09-21 | 2023-03-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2021
- 2021-09-07 JP JP2022550049A patent/JP7717080B2/ja active Active
- 2021-09-07 US US18/245,098 patent/US12205625B2/en active Active
- 2021-09-07 KR KR1020237012028A patent/KR20230069145A/ko active Pending
- 2021-09-07 WO PCT/IB2021/058112 patent/WO2022058838A1/ja not_active Ceased
- 2021-09-07 CN CN202180062871.4A patent/CN116194926A/zh active Pending
-
2025
- 2025-01-08 US US19/013,373 patent/US20250174259A1/en active Pending
- 2025-07-22 JP JP2025122430A patent/JP2025163069A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000323670A (ja) * | 1999-03-22 | 2000-11-24 | Internatl Business Mach Corp <Ibm> | ２トランジスタ単一キャパシタ強誘電性メモリ |
| JP2003092533A (ja) * | 2001-09-18 | 2003-03-28 | Matsushita Electric Ind Co Ltd | 半導体回路及びその駆動方法 |
| JP2011142136A (ja) * | 2010-01-05 | 2011-07-21 | Fujitsu Ltd | 電界効果型トランジスタ及びこれを用いた論理回路 |
| JP2018195366A (ja) * | 2017-05-19 | 2018-12-06 | ソニーセミコンダクタソリューションズ株式会社 | 半導体回路、駆動方法、および電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20230069145A (ko) | 2023-05-18 |
| JP2025163069A (ja) | 2025-10-28 |
| US20250174259A1 (en) | 2025-05-29 |
| WO2022058838A1 (ja) | 2022-03-24 |
| US20230386544A1 (en) | 2023-11-30 |
| US12205625B2 (en) | 2025-01-21 |
| CN116194926A (zh) | 2023-05-30 |
| JP7717080B2 (ja) | 2025-08-01 |
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