CN116194926A - 半导体装置及电子设备 - Google Patents

半导体装置及电子设备 Download PDF

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Publication number
CN116194926A
CN116194926A CN202180062871.4A CN202180062871A CN116194926A CN 116194926 A CN116194926 A CN 116194926A CN 202180062871 A CN202180062871 A CN 202180062871A CN 116194926 A CN116194926 A CN 116194926A
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CN
China
Prior art keywords
transistor
potential
insulator
gate
capacitor
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Pending
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CN202180062871.4A
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English (en)
Chinese (zh)
Inventor
乡户宏充
黑川义元
津田一树
大下智
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN116194926A publication Critical patent/CN116194926A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/48—Analogue computers for specific processes, systems or devices, e.g. simulators
    • G06G7/60—Analogue computers for specific processes, systems or devices, e.g. simulators for living beings, e.g. their nervous systems ; for problems in the medical field
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2297—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/033—Manufacture or treatment of data-storage electrodes comprising ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Biophysics (AREA)
  • General Health & Medical Sciences (AREA)
  • Neurology (AREA)
  • Molecular Biology (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Computational Linguistics (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Artificial Intelligence (AREA)
  • Computing Systems (AREA)
  • Software Systems (AREA)
  • Physiology (AREA)
  • Neurosurgery (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
CN202180062871.4A 2020-09-18 2021-09-07 半导体装置及电子设备 Pending CN116194926A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2020157610 2020-09-18
JP2020157607 2020-09-18
JP2020-157570 2020-09-18
JP2020-157610 2020-09-18
JP2020157570 2020-09-18
JP2020-157607 2020-09-18
PCT/IB2021/058112 WO2022058838A1 (ja) 2020-09-18 2021-09-07 半導体装置、および電子機器

Publications (1)

Publication Number Publication Date
CN116194926A true CN116194926A (zh) 2023-05-30

Family

ID=80775963

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180062871.4A Pending CN116194926A (zh) 2020-09-18 2021-09-07 半导体装置及电子设备

Country Status (5)

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US (2) US12205625B2 (https=)
JP (2) JP7717080B2 (https=)
KR (1) KR20230069145A (https=)
CN (1) CN116194926A (https=)
WO (1) WO2022058838A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12481867B2 (en) * 2021-04-28 2025-11-25 Arm Limited Memory for artificial neural network accelerator
JP7660532B2 (ja) * 2022-02-25 2025-04-11 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6101117A (en) 1999-03-22 2000-08-08 International Business Machines Corporation Two transistor single capacitor ferroelectric memory
JP2003092533A (ja) * 2001-09-18 2003-03-28 Matsushita Electric Ind Co Ltd 半導体回路及びその駆動方法
JP2008153479A (ja) * 2006-12-19 2008-07-03 Rohm Co Ltd 強誘電体電界効果トランジスタを備える半導体装置及びこれを用いた半導体集積回路装置
JP2011142136A (ja) 2010-01-05 2011-07-21 Fujitsu Ltd 電界効果型トランジスタ及びこれを用いた論理回路
CA2928042C (en) * 2013-10-25 2022-05-10 Blueprint Medicines Corporation Inhibitors of the fibroblast growth factor receptor
JP2017108397A (ja) * 2015-11-30 2017-06-15 株式会社半導体エネルギー研究所 信号処理回路、及び該信号処理回路を有する半導体装置
CN108701480B (zh) 2016-03-10 2022-10-14 株式会社半导体能源研究所 半导体装置
US10236875B2 (en) * 2016-04-15 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for operating the semiconductor device
KR102367787B1 (ko) * 2016-06-30 2022-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 동작 방법
JP2018195366A (ja) 2017-05-19 2018-12-06 ソニーセミコンダクタソリューションズ株式会社 半導体回路、駆動方法、および電子機器
KR20240152426A (ko) * 2018-03-29 2024-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치 및 전자 기기
WO2020104891A1 (ja) * 2018-11-22 2020-05-28 株式会社半導体エネルギー研究所 半導体装置、蓄電装置、及び電子機器
JP7273064B2 (ja) * 2018-12-19 2023-05-12 株式会社半導体エネルギー研究所 ヒステリシスコンパレータ、半導体装置、及び蓄電装置
US12585431B2 (en) * 2019-12-27 2026-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR20230039668A (ko) * 2020-07-17 2023-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US20230352477A1 (en) * 2020-08-03 2023-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN115769497A (zh) * 2020-08-03 2023-03-07 株式会社半导体能源研究所 半导体装置
JP7596386B2 (ja) * 2020-08-03 2024-12-09 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US12170519B2 (en) * 2021-07-07 2024-12-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2023047224A1 (ja) * 2021-09-21 2023-03-30 株式会社半導体エネルギー研究所 半導体装置

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Publication number Publication date
KR20230069145A (ko) 2023-05-18
JPWO2022058838A1 (https=) 2022-03-24
JP2025163069A (ja) 2025-10-28
US20250174259A1 (en) 2025-05-29
WO2022058838A1 (ja) 2022-03-24
US20230386544A1 (en) 2023-11-30
US12205625B2 (en) 2025-01-21
JP7717080B2 (ja) 2025-08-01

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