JPWO2022029542A1 - - Google Patents

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Publication number
JPWO2022029542A1
JPWO2022029542A1 JP2022541321A JP2022541321A JPWO2022029542A1 JP WO2022029542 A1 JPWO2022029542 A1 JP WO2022029542A1 JP 2022541321 A JP2022541321 A JP 2022541321A JP 2022541321 A JP2022541321 A JP 2022541321A JP WO2022029542 A1 JPWO2022029542 A1 JP WO2022029542A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022541321A
Other languages
Japanese (ja)
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JP7713944B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022029542A1 publication Critical patent/JPWO2022029542A1/ja
Priority to JP2025118820A priority Critical patent/JP7799127B2/ja
Application granted granted Critical
Publication of JP7713944B2 publication Critical patent/JP7713944B2/ja
Priority to JP2025282141A priority patent/JP2026062833A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/34—Analogue value compared with reference values
    • H03M1/38—Analogue value compared with reference values sequentially only, e.g. successive approximation type
    • H03M1/46—Analogue value compared with reference values sequentially only, e.g. successive approximation type with digital/analogue converter for supplying reference values to converter
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • G06G7/14—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for addition or subtraction 
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/48—Analogue computers for specific processes, systems or devices, e.g. simulators
    • G06G7/60—Analogue computers for specific processes, systems or devices, e.g. simulators for living beings, e.g. their nervous systems ; for problems in the medical field
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66—Digital/analogue converters
    • H03M1/74—Simultaneous conversion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/027—Details of drivers for data electrodes, the drivers handling digital grey scale data, e.g. use of D/A converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Software Systems (AREA)
  • Biophysics (AREA)
  • Neurology (AREA)
  • General Engineering & Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Molecular Biology (AREA)
  • Computing Systems (AREA)
  • Data Mining & Analysis (AREA)
  • Computational Linguistics (AREA)
  • Artificial Intelligence (AREA)
  • Neurosurgery (AREA)
  • Physiology (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Analogue/Digital Conversion (AREA)
  • Manipulation Of Pulses (AREA)
JP2022541321A 2020-08-03 2021-07-26 半導体装置 Active JP7713944B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2025118820A JP7799127B2 (ja) 2020-08-03 2025-07-15 有機ｅｌ表示装置
JP2025282141A JP2026062833A (ja) 2020-08-03 2025-12-25 半導体装置

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2020131717 2020-08-03
JP2020131717 2020-08-03
JP2020219739 2020-12-29
JP2020219739 2020-12-29
JP2021017033 2021-02-05
JP2021017033 2021-02-05
JP2021095086 2021-06-07
JP2021095086 2021-06-07
PCT/IB2021/056695 WO2022029542A1 (ja) 2020-08-03 2021-07-26 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025118820A Division JP7799127B2 (ja) 2020-08-03 2025-07-15 有機ｅｌ表示装置

Publications (2)

Publication Number Publication Date
JPWO2022029542A1 true JPWO2022029542A1 (https=) 2022-02-10
JP7713944B2 JP7713944B2 (ja) 2025-07-28

Family

ID=80117222

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2022541321A Active JP7713944B2 (ja) 2020-08-03 2021-07-26 半導体装置
JP2025118820A Active JP7799127B2 (ja) 2020-08-03 2025-07-15 有機ｅｌ表示装置
JP2025282141A Pending JP2026062833A (ja) 2020-08-03 2025-12-25 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2025118820A Active JP7799127B2 (ja) 2020-08-03 2025-07-15 有機ｅｌ表示装置
JP2025282141A Pending JP2026062833A (ja) 2020-08-03 2025-12-25 半導体装置

Country Status (5)

Country Link
US (1) US12592714B2 (https=)
JP (3) JP7713944B2 (https=)
KR (1) KR20230048063A (https=)
CN (1) CN115769497A (https=)
WO (1) WO2022029542A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115769497A (zh) 2020-08-03 2023-03-07 株式会社半导体能源研究所 半导体装置
JP7717080B2 (ja) * 2020-09-18 2025-08-01 株式会社半導体エネルギー研究所 半導体装置、および電子機器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5920202B2 (ja) * 1978-09-13 1984-05-11 シ・エツセ・エ・エレ・チ−セントロ・ステユデイ・エ・ラボラトリ・テレコミニカチオ−ニ・エツセ・ピ−・ア− アナログ−デジタルコンバ−タ
US20190190531A1 (en) * 2017-12-19 2019-06-20 Imec Vzw Analog-to-digital converters
JP2019186842A (ja) * 2018-04-16 2019-10-24 ザインエレクトロニクス株式会社 Ａｄ変換器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69331170T2 (de) * 1992-03-31 2002-06-20 Texas Instruments Inc., Dallas Mehrmoden-Analog/Digitalwandler und Verfahren
US20020027688A1 (en) * 2000-09-05 2002-03-07 Jim Stephenson Fiber optic transceiver employing digital dual loop compensation
TWI655442B (zh) 2014-05-02 2019-04-01 日商半導體能源研究所股份有限公司 輸入／輸出裝置
JP6633330B2 (ja) 2014-09-26 2020-01-22 株式会社半導体エネルギー研究所 半導体装置
KR102609508B1 (ko) * 2016-11-11 2023-12-04 엘지디스플레이 주식회사 외부 보상용 드라이버 집적회로와 그를 포함한 표시장치
US10148280B2 (en) * 2016-12-23 2018-12-04 Avnera Corporation Hybrid flash architecture of successive approximation register analog to digital converter
US10483994B2 (en) * 2017-12-29 2019-11-19 Texas Instruments Incorporated Kickback compensation for a capacitively driven comparator
US11128307B2 (en) * 2018-10-30 2021-09-21 Omnivision Technologies, Inc. Circuit and method for control of counter start time
US10630304B1 (en) * 2019-04-01 2020-04-21 Nxp B.V. Sub-ranging analog-to-digital converter
US10886937B1 (en) * 2019-10-16 2021-01-05 Analog Devices International Unlimited Company Method to embed ELD DAC in SAR quantizer
US11018682B1 (en) * 2020-05-28 2021-05-25 Nxp B.V. Time-interleaved sub-ranging analog-to-digital converter
CN115769497A (zh) 2020-08-03 2023-03-07 株式会社半导体能源研究所 半导体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5920202B2 (ja) * 1978-09-13 1984-05-11 シ・エツセ・エ・エレ・チ−セントロ・ステユデイ・エ・ラボラトリ・テレコミニカチオ−ニ・エツセ・ピ−・ア− アナログ−デジタルコンバ−タ
US20190190531A1 (en) * 2017-12-19 2019-06-20 Imec Vzw Analog-to-digital converters
JP2019186842A (ja) * 2018-04-16 2019-10-24 ザインエレクトロニクス株式会社 Ａｄ変換器

Also Published As

Publication number Publication date
JP7799127B2 (ja) 2026-01-14
WO2022029542A1 (ja) 2022-02-10
JP7713944B2 (ja) 2025-07-28
JP2026062833A (ja) 2026-04-10
JP2025142026A (ja) 2025-09-29
US20230353163A1 (en) 2023-11-02
KR20230048063A (ko) 2023-04-10
US12592714B2 (en) 2026-03-31
CN115769497A (zh) 2023-03-07

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