JPWO2022016127A5 - - Google Patents
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- JPWO2022016127A5 JPWO2022016127A5 JP2023502907A JP2023502907A JPWO2022016127A5 JP WO2022016127 A5 JPWO2022016127 A5 JP WO2022016127A5 JP 2023502907 A JP2023502907 A JP 2023502907A JP 2023502907 A JP2023502907 A JP 2023502907A JP WO2022016127 A5 JPWO2022016127 A5 JP WO2022016127A5
- Authority
- JP
- Japan
- Prior art keywords
- optionally substituted
- alkyl
- film
- radiation
- independently
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000000034 method Methods 0.000 claims description 67
- 230000005855 radiation Effects 0.000 claims description 32
- 239000003446 ligand Substances 0.000 claims description 19
- 238000000059 patterning Methods 0.000 claims description 18
- 125000000217 alkyl group Chemical group 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 13
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 13
- 125000000547 substituted alkyl group Chemical group 0.000 claims description 13
- 239000012713 reactive precursor Substances 0.000 claims description 10
- 150000004770 chalcogenides Chemical class 0.000 claims description 9
- 239000003153 chemical reaction reagent Substances 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 239000002243 precursor Substances 0.000 claims description 9
- 125000003107 substituted aryl group Chemical group 0.000 claims description 8
- 125000005415 substituted alkoxy group Chemical group 0.000 claims description 7
- 150000001350 alkyl halides Chemical class 0.000 claims description 5
- 125000001475 halogen functional group Chemical group 0.000 claims description 5
- 125000000623 heterocyclic group Chemical group 0.000 claims description 5
- 125000005017 substituted alkenyl group Chemical group 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 125000004665 trialkylsilyl group Chemical group 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 125000000129 anionic group Chemical group 0.000 claims description 4
- 230000007935 neutral effect Effects 0.000 claims description 4
- 125000004450 alkenylene group Chemical group 0.000 claims description 3
- 125000002947 alkylene group Chemical group 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- IUTCEZPPWBHGIX-UHFFFAOYSA-N tin(2+) Chemical compound [Sn+2] IUTCEZPPWBHGIX-UHFFFAOYSA-N 0.000 claims description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 125000001188 haloalkyl group Chemical group 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 239000011669 selenium Chemical group 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000011593 sulfur Substances 0.000 claims description 2
- 229910052714 tellurium Chemical group 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 150000002902 organometallic compounds Chemical class 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 125000004423 acyloxy group Chemical group 0.000 description 1
- 125000000392 cycloalkenyl group Chemical group 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000004426 substituted alkynyl group Chemical group 0.000 description 1
- 125000005346 substituted cycloalkyl group Chemical group 0.000 description 1
- SYRHIZPPCHMRIT-UHFFFAOYSA-N tin(4+) Chemical compound [Sn+4] SYRHIZPPCHMRIT-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202062705856P | 2020-07-17 | 2020-07-17 | |
| US62/705,856 | 2020-07-17 | ||
| PCT/US2021/042107 WO2022016127A1 (en) | 2020-07-17 | 2021-07-16 | Photoresists from sn(ii) precursors |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023535894A JP2023535894A (ja) | 2023-08-22 |
| JP2023535894A5 JP2023535894A5 (https=) | 2024-07-23 |
| JPWO2022016127A5 true JPWO2022016127A5 (https=) | 2024-07-23 |
Family
ID=79555034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023502907A Pending JP2023535894A (ja) | 2020-07-17 | 2021-07-16 | Ｓｎ（ｉｉ）前駆体からのフォトレジスト |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230266664A1 (https=) |
| JP (1) | JP2023535894A (https=) |
| KR (1) | KR102846047B1 (https=) |
| CN (1) | CN116171403A (https=) |
| TW (1) | TW202219632A (https=) |
| WO (1) | WO2022016127A1 (https=) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| KR102678588B1 (ko) | 2018-11-14 | 2024-06-27 | 램 리써치 코포레이션 | 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들 |
| US12211691B2 (en) | 2018-12-20 | 2025-01-28 | Lam Research Corporation | Dry development of resists |
| TW202514246A (zh) | 2019-03-18 | 2025-04-01 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI910974B (zh) | 2019-06-26 | 2026-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| JP7618601B2 (ja) | 2019-06-28 | 2025-01-21 | ラム リサーチ コーポレーション | 複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト |
| CN114200776A (zh) | 2020-01-15 | 2022-03-18 | 朗姆研究公司 | 用于光刻胶粘附和剂量减少的底层 |
| CN115244664A (zh) | 2020-02-28 | 2022-10-25 | 朗姆研究公司 | 用于减少euv图案化缺陷的多层硬掩模 |
| US12416863B2 (en) * | 2020-07-01 | 2025-09-16 | Applied Materials, Inc. | Dry develop process of photoresist |
| US12222643B2 (en) * | 2020-07-02 | 2025-02-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device and pattern formation method |
| WO2022010809A1 (en) | 2020-07-07 | 2022-01-13 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| WO2022103764A1 (en) | 2020-11-13 | 2022-05-19 | Lam Research Corporation | Process tool for dry removal of photoresist |
| US12577466B2 (en) * | 2020-12-08 | 2026-03-17 | Lam Research Corporation | Photoresist development with organic vapor |
| US11685752B2 (en) * | 2021-01-28 | 2023-06-27 | Entegris, Inc. | Process for preparing organotin compounds |
| TWI847128B (zh) | 2021-04-23 | 2024-07-01 | 美商恩特葛瑞斯股份有限公司 | 用於低曝光劑量euv輻射之高量子效率乾式抗蝕劑 |
| CN118525110A (zh) * | 2021-12-29 | 2024-08-20 | 乔治洛德方法研究和开发液化空气有限公司 | 用于沉积含锡薄膜的含锡前体及其相应的沉积方法 |
| KR102725782B1 (ko) | 2022-07-01 | 2024-11-05 | 램 리써치 코포레이션 | 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상 |
| KR102876476B1 (ko) * | 2022-07-12 | 2025-10-23 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| WO2024076218A1 (ko) * | 2022-10-07 | 2024-04-11 | 솔브레인 주식회사 | 칼코게나이드계 박막 개질제, 이를 사용하여 제조된 반도체 기판 및 반도체 소자 |
| US20240160100A1 (en) * | 2022-11-14 | 2024-05-16 | Applied Materials, Inc. | Integrated solution with low temperature dry develop for euv photoresist |
| JP2025537025A (ja) * | 2022-11-15 | 2025-11-12 | インテグリス・インコーポレーテッド | 官能化有機スズ前駆体及び関連する方法 |
| JP7802711B2 (ja) * | 2023-01-06 | 2026-01-20 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法 |
| CN116410222B (zh) * | 2023-06-09 | 2023-08-08 | 研峰科技(北京)有限公司 | 一种叔丁基三(二甲氨基)锡烷的合成方法 |
| KR20250009842A (ko) * | 2023-07-11 | 2025-01-20 | 광주과학기술원 | 건식 현상이 가능한 포토레지스트 조성물 |
| KR20250034920A (ko) | 2023-07-27 | 2025-03-11 | 램 리써치 코포레이션 | 금속-함유 포토레지스트에 대한 올-인-원 건식 현상 |
| US20250085627A1 (en) * | 2023-09-12 | 2025-03-13 | Inpria Corporation | Organotin photoresist compositions having fluoride generator compounds, fluorinated organotin coatings and patterning |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG153748A1 (en) * | 2007-12-17 | 2009-07-29 | Asml Holding Nv | Lithographic method and apparatus |
| US9176377B2 (en) * | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
| JP2016529330A (ja) * | 2013-06-27 | 2016-09-23 | 東洋合成工業株式会社 | 化学種の発生を向上させるための試剤 |
| TWI639179B (zh) * | 2014-01-31 | 2018-10-21 | 美商蘭姆研究公司 | 真空整合硬遮罩製程及設備 |
| CN107407870B (zh) * | 2015-04-01 | 2018-12-14 | 东丽株式会社 | 感光性树脂组合物、导电性图案的制造方法、基板、触摸面板及显示器 |
| US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| US11022879B2 (en) * | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
| KR102226430B1 (ko) * | 2017-12-19 | 2021-03-10 | 삼성에스디아이 주식회사 | 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| TWI814552B (zh) * | 2018-04-05 | 2023-09-01 | 美商英培雅股份有限公司 | 錫十二聚物及具有強ｅｕｖ吸收的輻射可圖案化塗層 |
| EP3791231A4 (en) * | 2018-05-11 | 2022-01-26 | Lam Research Corporation | PROCESS FOR THE MANUFACTURE OF EUV SAMPLE HARD MASKS |
| KR102207893B1 (ko) * | 2018-05-25 | 2021-01-25 | 삼성에스디아이 주식회사 | 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR102296818B1 (ko) * | 2018-12-26 | 2021-08-31 | 삼성에스디아이 주식회사 | 반도체 레지스트용 조성물, 및 이를 이용한 패턴 형성 방법 |
-
2021
- 2021-07-16 JP JP2023502907A patent/JP2023535894A/ja active Pending
- 2021-07-16 US US18/005,594 patent/US20230266664A1/en active Pending
- 2021-07-16 WO PCT/US2021/042107 patent/WO2022016127A1/en not_active Ceased
- 2021-07-16 KR KR1020237005318A patent/KR102846047B1/ko active Active
- 2021-07-16 CN CN202180060488.5A patent/CN116171403A/zh active Pending
- 2021-07-19 TW TW110126458A patent/TW202219632A/zh unknown
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