TW202219632A - 來自Sn(II)前驅物的光阻 - Google Patents

來自Sn(II)前驅物的光阻 Download PDF

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Publication number
TW202219632A
TW202219632A TW110126458A TW110126458A TW202219632A TW 202219632 A TW202219632 A TW 202219632A TW 110126458 A TW110126458 A TW 110126458A TW 110126458 A TW110126458 A TW 110126458A TW 202219632 A TW202219632 A TW 202219632A
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TW
Taiwan
Prior art keywords
optionally substituted
film
euv
alkyl
radiation
Prior art date
Application number
TW110126458A
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English (en)
Chinese (zh)
Inventor
艾瑞克 卡爾文 漢森
吳呈昊
蒂莫西 威廉 魏德曼
Original Assignee
美商蘭姆研究公司
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Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW202219632A publication Critical patent/TW202219632A/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW110126458A 2020-07-17 2021-07-19 來自Sn(II)前驅物的光阻 TW202219632A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202062705856P 2020-07-17 2020-07-17
US62/705,856 2020-07-17

Publications (1)

Publication Number Publication Date
TW202219632A true TW202219632A (zh) 2022-05-16

Family

ID=79555034

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110126458A TW202219632A (zh) 2020-07-17 2021-07-19 來自Sn(II)前驅物的光阻

Country Status (6)

Country Link
US (1) US20230266664A1 (https=)
JP (1) JP2023535894A (https=)
KR (1) KR102846047B1 (https=)
CN (1) CN116171403A (https=)
TW (1) TW202219632A (https=)
WO (1) WO2022016127A1 (https=)

Cited By (4)

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TWI867534B (zh) * 2022-07-12 2024-12-21 南韓商三星Ｓｄｉ股份有限公司 半導體光阻組成物及使用所述組成物形成圖案的方法
TWI890197B (zh) * 2022-11-15 2025-07-11 美商恩特葛瑞斯股份有限公司 官能化有機錫前驅物及相關方法
US12416863B2 (en) 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist
TWI911565B (zh) * 2022-11-14 2026-01-11 美商應用材料股份有限公司 Ｅｕｖ光阻劑的低溫乾式顯影的整合解決方案半導體處理工具

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US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR20250160237A (ko) 2019-06-28 2025-11-11 램 리써치 코포레이션 복수의 패터닝 복사-흡수 엘리먼트들 및/또는 수직 조성 경사를 갖는 포토레지스트
SG11202108851RA (en) 2020-01-15 2021-09-29 Lam Res Corp Underlayer for photoresist adhesion and dose reduction
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
US12222643B2 (en) * 2020-07-02 2025-02-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and pattern formation method
EP4078292A4 (en) 2020-07-07 2023-11-22 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US20230107357A1 (en) 2020-11-13 2023-04-06 Lam Research Corporation Process tool for dry removal of photoresist
JP7681106B2 (ja) * 2020-12-08 2025-05-21 ラム リサーチ コーポレーション 有機蒸気によるフォトレジストの現像
TWI821891B (zh) * 2021-01-28 2023-11-11 美商恩特葛瑞斯股份有限公司 製備有機錫化合物的方法
TWI847128B (zh) * 2021-04-23 2024-07-01 美商恩特葛瑞斯股份有限公司 用於低曝光劑量euv輻射之高量子效率乾式抗蝕劑
KR20240128971A (ko) * 2021-12-29 2024-08-27 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 주석-함유 박막의 증착을 위한 주석-함유 전구체 및 이의 상응하는 증착 공정
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
JP2025532314A (ja) * 2022-10-07 2025-09-29 ソウルブレイン シーオー．， エルティーディー． カルコゲナイド系薄膜改質剤、これを用いて製造された半導体基板および半導体素子
JP7802711B2 (ja) * 2023-01-06 2026-01-20 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
CN116410222B (zh) * 2023-06-09 2023-08-08 研峰科技(北京)有限公司 一种叔丁基三(二甲氨基)锡烷的合成方法
KR20250009842A (ko) * 2023-07-11 2025-01-20 광주과학기술원 건식 현상이 가능한 포토레지스트 조성물
JP7852072B2 (ja) 2023-07-27 2026-04-27 ラム リサーチ コーポレーション 金属含有フォトレジストのためのオールインワン乾式現像
TW202511272A (zh) * 2023-09-12 2025-03-16 美商英培雅股份有限公司 用於輻射圖案化組成物之前驅物溶液

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SG153748A1 (en) * 2007-12-17 2009-07-29 Asml Holding Nv Lithographic method and apparatus
US9176377B2 (en) * 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
JP2016529330A (ja) * 2013-06-27 2016-09-23 東洋合成工業株式会社 化学種の発生を向上させるための試剤
TWI639179B (zh) * 2014-01-31 2018-10-21 美商蘭姆研究公司 真空整合硬遮罩製程及設備
WO2016158864A1 (ja) * 2015-04-01 2016-10-06 東レ株式会社 感光性樹脂組成物、導電性パターンの製造方法、基板、タッチパネル及びディスプレイ
US9996004B2 (en) * 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
US11022879B2 (en) * 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
KR102226430B1 (ko) * 2017-12-19 2021-03-10 삼성에스디아이 주식회사 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
TWI875109B (zh) * 2018-04-05 2025-03-01 美商英培雅股份有限公司 包含錫化合物的組合物及其應用
KR20200144580A (ko) * 2018-05-11 2020-12-29 램 리써치 코포레이션 Euv 패터닝 가능한 하드 마스크들을 제조하기 위한 방법들
KR102207893B1 (ko) * 2018-05-25 2021-01-25 삼성에스디아이 주식회사 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR102296818B1 (ko) * 2018-12-26 2021-08-31 삼성에스디아이 주식회사 반도체 레지스트용 조성물, 및 이를 이용한 패턴 형성 방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12416863B2 (en) 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist
TWI867534B (zh) * 2022-07-12 2024-12-21 南韓商三星Ｓｄｉ股份有限公司 半導體光阻組成物及使用所述組成物形成圖案的方法
TWI911565B (zh) * 2022-11-14 2026-01-11 美商應用材料股份有限公司 Ｅｕｖ光阻劑的低溫乾式顯影的整合解決方案半導體處理工具
TWI890197B (zh) * 2022-11-15 2025-07-11 美商恩特葛瑞斯股份有限公司 官能化有機錫前驅物及相關方法

Also Published As

Publication number Publication date
WO2022016127A1 (en) 2022-01-20
KR20230051770A (ko) 2023-04-18
US20230266664A1 (en) 2023-08-24
CN116171403A (zh) 2023-05-26
JP2023535894A (ja) 2023-08-22
KR102846047B1 (ko) 2025-08-13

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