CN116171403A - 来自Sn(II)前体的光致抗蚀剂 - Google Patents

来自Sn(II)前体的光致抗蚀剂 Download PDF

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Publication number
CN116171403A
CN116171403A CN202180060488.5A CN202180060488A CN116171403A CN 116171403 A CN116171403 A CN 116171403A CN 202180060488 A CN202180060488 A CN 202180060488A CN 116171403 A CN116171403 A CN 116171403A
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CN
China
Prior art keywords
optionally substituted
film
euv
alkyl
radiation
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Pending
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CN202180060488.5A
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English (en)
Chinese (zh)
Inventor
埃里克·卡尔文·汉森
吴呈昊
蒂莫西·威廉·威德曼
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Lam Research Corp
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Lam Research Corp
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Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN116171403A publication Critical patent/CN116171403A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Materials For Photolithography (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
CN202180060488.5A 2020-07-17 2021-07-16 来自Sn(II)前体的光致抗蚀剂 Pending CN116171403A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062705856P 2020-07-17 2020-07-17
US62/705,856 2020-07-17
PCT/US2021/042107 WO2022016127A1 (en) 2020-07-17 2021-07-16 Photoresists from sn(ii) precursors

Publications (1)

Publication Number Publication Date
CN116171403A true CN116171403A (zh) 2023-05-26

Family

ID=79555034

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180060488.5A Pending CN116171403A (zh) 2020-07-17 2021-07-16 来自Sn(II)前体的光致抗蚀剂

Country Status (6)

Country Link
US (1) US20230266664A1 (https=)
JP (1) JP2023535894A (https=)
KR (1) KR102846047B1 (https=)
CN (1) CN116171403A (https=)
TW (1) TW202219632A (https=)
WO (1) WO2022016127A1 (https=)

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CN116410222B (zh) * 2023-06-09 2023-08-08 研峰科技(北京)有限公司 一种叔丁基三(二甲氨基)锡烷的合成方法

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KR102678588B1 (ko) 2018-11-14 2024-06-27 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
JP7618601B2 (ja) 2019-06-28 2025-01-21 ラム リサーチ コーポレーション 複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
US12416863B2 (en) * 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist
US12222643B2 (en) * 2020-07-02 2025-02-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and pattern formation method
WO2022010809A1 (en) 2020-07-07 2022-01-13 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
WO2022103764A1 (en) 2020-11-13 2022-05-19 Lam Research Corporation Process tool for dry removal of photoresist
US12577466B2 (en) * 2020-12-08 2026-03-17 Lam Research Corporation Photoresist development with organic vapor
US11685752B2 (en) * 2021-01-28 2023-06-27 Entegris, Inc. Process for preparing organotin compounds
TWI847128B (zh) 2021-04-23 2024-07-01 美商恩特葛瑞斯股份有限公司 用於低曝光劑量euv輻射之高量子效率乾式抗蝕劑
CN118525110A (zh) * 2021-12-29 2024-08-20 乔治洛德方法研究和开发液化空气有限公司 用于沉积含锡薄膜的含锡前体及其相应的沉积方法
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
KR102876476B1 (ko) * 2022-07-12 2025-10-23 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
WO2024076218A1 (ko) * 2022-10-07 2024-04-11 솔브레인 주식회사 칼코게나이드계 박막 개질제, 이를 사용하여 제조된 반도체 기판 및 반도체 소자
US20240160100A1 (en) * 2022-11-14 2024-05-16 Applied Materials, Inc. Integrated solution with low temperature dry develop for euv photoresist
JP2025537025A (ja) * 2022-11-15 2025-11-12 インテグリス・インコーポレーテッド 官能化有機スズ前駆体及び関連する方法
JP7802711B2 (ja) * 2023-01-06 2026-01-20 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
KR20250009842A (ko) * 2023-07-11 2025-01-20 광주과학기술원 건식 현상이 가능한 포토레지스트 조성물
KR20250034920A (ko) 2023-07-27 2025-03-11 램 리써치 코포레이션 금속-함유 포토레지스트에 대한 올-인-원 건식 현상
US20250085627A1 (en) * 2023-09-12 2025-03-13 Inpria Corporation Organotin photoresist compositions having fluoride generator compounds, fluorinated organotin coatings and patterning

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JP2016529330A (ja) * 2013-06-27 2016-09-23 東洋合成工業株式会社 化学種の発生を向上させるための試剤
TWI639179B (zh) * 2014-01-31 2018-10-21 美商蘭姆研究公司 真空整合硬遮罩製程及設備
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KR102226430B1 (ko) * 2017-12-19 2021-03-10 삼성에스디아이 주식회사 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
TWI814552B (zh) * 2018-04-05 2023-09-01 美商英培雅股份有限公司 錫十二聚物及具有強ｅｕｖ吸收的輻射可圖案化塗層
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KR102296818B1 (ko) * 2018-12-26 2021-08-31 삼성에스디아이 주식회사 반도체 레지스트용 조성물, 및 이를 이용한 패턴 형성 방법

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Publication number Priority date Publication date Assignee Title
CN116410222B (zh) * 2023-06-09 2023-08-08 研峰科技(北京)有限公司 一种叔丁基三(二甲氨基)锡烷的合成方法

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TW202219632A (zh) 2022-05-16
US20230266664A1 (en) 2023-08-24
KR20230051770A (ko) 2023-04-18
JP2023535894A (ja) 2023-08-22
KR102846047B1 (ko) 2025-08-13
WO2022016127A1 (en) 2022-01-20

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