JP2023535894A5 - - Google Patents
Info
- Publication number
- JP2023535894A5 JP2023535894A5 JP2023502907A JP2023502907A JP2023535894A5 JP 2023535894 A5 JP2023535894 A5 JP 2023535894A5 JP 2023502907 A JP2023502907 A JP 2023502907A JP 2023502907 A JP2023502907 A JP 2023502907A JP 2023535894 A5 JP2023535894 A5 JP 2023535894A5
- Authority
- JP
- Japan
- Prior art keywords
- optionally substituted
- film
- alkyl
- radiation
- independently
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202062705856P | 2020-07-17 | 2020-07-17 | |
| US62/705,856 | 2020-07-17 | ||
| PCT/US2021/042107 WO2022016127A1 (en) | 2020-07-17 | 2021-07-16 | Photoresists from sn(ii) precursors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023535894A JP2023535894A (ja) | 2023-08-22 |
| JP2023535894A5 true JP2023535894A5 (https=) | 2024-07-23 |
Family
ID=79555034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023502907A Pending JP2023535894A (ja) | 2020-07-17 | 2021-07-16 | Ｓｎ（ｉｉ）前駆体からのフォトレジスト |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230266664A1 (https=) |
| JP (1) | JP2023535894A (https=) |
| KR (1) | KR102846047B1 (https=) |
| CN (1) | CN116171403A (https=) |
| TW (1) | TW202219632A (https=) |
| WO (1) | WO2022016127A1 (https=) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| CN113039486B (zh) | 2018-11-14 | 2024-11-12 | 朗姆研究公司 | 可用于下一代光刻法中的硬掩模制作方法 |
| US12211691B2 (en) | 2018-12-20 | 2025-01-28 | Lam Research Corporation | Dry development of resists |
| TW202514246A (zh) | 2019-03-18 | 2025-04-01 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI837391B (zh) | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| KR20250160237A (ko) | 2019-06-28 | 2025-11-11 | 램 리써치 코포레이션 | 복수의 패터닝 복사-흡수 엘리먼트들 및/또는 수직 조성 경사를 갖는 포토레지스트 |
| SG11202108851RA (en) | 2020-01-15 | 2021-09-29 | Lam Res Corp | Underlayer for photoresist adhesion and dose reduction |
| CN115244664A (zh) | 2020-02-28 | 2022-10-25 | 朗姆研究公司 | 用于减少euv图案化缺陷的多层硬掩模 |
| US12416863B2 (en) * | 2020-07-01 | 2025-09-16 | Applied Materials, Inc. | Dry develop process of photoresist |
| US12222643B2 (en) * | 2020-07-02 | 2025-02-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device and pattern formation method |
| EP4078292A4 (en) | 2020-07-07 | 2023-11-22 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| US20230107357A1 (en) | 2020-11-13 | 2023-04-06 | Lam Research Corporation | Process tool for dry removal of photoresist |
| JP7681106B2 (ja) * | 2020-12-08 | 2025-05-21 | ラム リサーチ コーポレーション | 有機蒸気によるフォトレジストの現像 |
| TWI821891B (zh) * | 2021-01-28 | 2023-11-11 | 美商恩特葛瑞斯股份有限公司 | 製備有機錫化合物的方法 |
| TWI847128B (zh) * | 2021-04-23 | 2024-07-01 | 美商恩特葛瑞斯股份有限公司 | 用於低曝光劑量euv輻射之高量子效率乾式抗蝕劑 |
| KR20240128971A (ko) * | 2021-12-29 | 2024-08-27 | 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 주석-함유 박막의 증착을 위한 주석-함유 전구체 및 이의 상응하는 증착 공정 |
| KR102725782B1 (ko) | 2022-07-01 | 2024-11-05 | 램 리써치 코포레이션 | 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상 |
| KR102876476B1 (ko) * | 2022-07-12 | 2025-10-23 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| JP2025532314A (ja) * | 2022-10-07 | 2025-09-29 | ソウルブレイン シーオー．， エルティーディー． | カルコゲナイド系薄膜改質剤、これを用いて製造された半導体基板および半導体素子 |
| US20240160100A1 (en) * | 2022-11-14 | 2024-05-16 | Applied Materials, Inc. | Integrated solution with low temperature dry develop for euv photoresist |
| KR20250121550A (ko) * | 2022-11-15 | 2025-08-12 | 엔테그리스, 아이엔씨. | 관능화된 유기주석 전구체 및 관련 방법 |
| JP7802711B2 (ja) * | 2023-01-06 | 2026-01-20 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法 |
| CN116410222B (zh) * | 2023-06-09 | 2023-08-08 | 研峰科技(北京)有限公司 | 一种叔丁基三(二甲氨基)锡烷的合成方法 |
| KR20250009842A (ko) * | 2023-07-11 | 2025-01-20 | 광주과학기술원 | 건식 현상이 가능한 포토레지스트 조성물 |
| JP7852072B2 (ja) | 2023-07-27 | 2026-04-27 | ラム リサーチ コーポレーション | 金属含有フォトレジストのためのオールインワン乾式現像 |
| TW202511272A (zh) * | 2023-09-12 | 2025-03-16 | 美商英培雅股份有限公司 | 用於輻射圖案化組成物之前驅物溶液 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG153748A1 (en) * | 2007-12-17 | 2009-07-29 | Asml Holding Nv | Lithographic method and apparatus |
| US9176377B2 (en) * | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
| JP2016529330A (ja) * | 2013-06-27 | 2016-09-23 | 東洋合成工業株式会社 | 化学種の発生を向上させるための試剤 |
| TWI639179B (zh) * | 2014-01-31 | 2018-10-21 | 美商蘭姆研究公司 | 真空整合硬遮罩製程及設備 |
| WO2016158864A1 (ja) * | 2015-04-01 | 2016-10-06 | 東レ株式会社 | 感光性樹脂組成物、導電性パターンの製造方法、基板、タッチパネル及びディスプレイ |
| US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| US11022879B2 (en) * | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
| KR102226430B1 (ko) * | 2017-12-19 | 2021-03-10 | 삼성에스디아이 주식회사 | 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| TWI875109B (zh) * | 2018-04-05 | 2025-03-01 | 美商英培雅股份有限公司 | 包含錫化合物的組合物及其應用 |
| KR20200144580A (ko) * | 2018-05-11 | 2020-12-29 | 램 리써치 코포레이션 | Euv 패터닝 가능한 하드 마스크들을 제조하기 위한 방법들 |
| KR102207893B1 (ko) * | 2018-05-25 | 2021-01-25 | 삼성에스디아이 주식회사 | 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR102296818B1 (ko) * | 2018-12-26 | 2021-08-31 | 삼성에스디아이 주식회사 | 반도체 레지스트용 조성물, 및 이를 이용한 패턴 형성 방법 |
-
2021
- 2021-07-16 CN CN202180060488.5A patent/CN116171403A/zh active Pending
- 2021-07-16 KR KR1020237005318A patent/KR102846047B1/ko active Active
- 2021-07-16 US US18/005,594 patent/US20230266664A1/en active Pending
- 2021-07-16 WO PCT/US2021/042107 patent/WO2022016127A1/en not_active Ceased
- 2021-07-16 JP JP2023502907A patent/JP2023535894A/ja active Pending
- 2021-07-19 TW TW110126458A patent/TW202219632A/zh unknown
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