JPWO2021085078A5 - - Google Patents
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- Publication number
- JPWO2021085078A5 JPWO2021085078A5 JP2021554269A JP2021554269A JPWO2021085078A5 JP WO2021085078 A5 JPWO2021085078 A5 JP WO2021085078A5 JP 2021554269 A JP2021554269 A JP 2021554269A JP 2021554269 A JP2021554269 A JP 2021554269A JP WO2021085078 A5 JPWO2021085078 A5 JP WO2021085078A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- impurity region
- main surface
- silicon carbide
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 claims 41
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 26
- 229910010271 silicon carbide Inorganic materials 0.000 claims 26
- 239000004065 semiconductor Substances 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 230000007423 decrease Effects 0.000 claims 3
- 230000004913 activation Effects 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 2
- 230000007547 defect Effects 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025009115A JP7836051B2 (ja) | 2019-10-29 | 2025-01-22 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019196257 | 2019-10-29 | ||
| JP2019196257 | 2019-10-29 | ||
| PCT/JP2020/038231 WO2021085078A1 (ja) | 2019-10-29 | 2020-10-09 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025009115A Division JP7836051B2 (ja) | 2019-10-29 | 2025-01-22 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021085078A1 JPWO2021085078A1 (https=) | 2021-05-06 |
| JPWO2021085078A5 true JPWO2021085078A5 (https=) | 2022-07-05 |
| JP7642947B2 JP7642947B2 (ja) | 2025-03-11 |
Family
ID=75715166
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021554269A Active JP7642947B2 (ja) | 2019-10-29 | 2020-10-09 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
| JP2025009115A Active JP7836051B2 (ja) | 2019-10-29 | 2025-01-22 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025009115A Active JP7836051B2 (ja) | 2019-10-29 | 2025-01-22 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12302621B2 (https=) |
| JP (2) | JP7642947B2 (https=) |
| CN (1) | CN114600250B (https=) |
| DE (1) | DE112020005203T5 (https=) |
| WO (1) | WO2021085078A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT202100001922A1 (it) * | 2021-01-29 | 2022-07-29 | St Microelectronics Srl | Struttura di contatto dal retro perfezionata per un dispositivo a semiconduttore e relativo procedimento di fabbricazione |
| JP2024093631A (ja) * | 2022-12-27 | 2024-07-09 | 株式会社デンソー | 半導体装置とその製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001119022A (ja) * | 1999-10-20 | 2001-04-27 | Fuji Electric Co Ltd | 半導体装置及びその製造方法 |
| JP6036200B2 (ja) * | 2012-11-13 | 2016-11-30 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
| US20160254148A1 (en) | 2013-10-28 | 2016-09-01 | Fuji Electric Co., Ltd. | Silicon carbide semiconductor device and manufacturing method for same |
| US9209027B1 (en) * | 2014-08-14 | 2015-12-08 | Infineon Technologies Ag | Adjusting the charge carrier lifetime in a bipolar semiconductor device |
| JP6070790B2 (ja) * | 2015-08-18 | 2017-02-01 | 住友電気工業株式会社 | 半導体装置の製造方法および半導体装置 |
| JP6584879B2 (ja) * | 2015-09-11 | 2019-10-02 | 株式会社東芝 | 半導体装置 |
| JP2017168666A (ja) * | 2016-03-16 | 2017-09-21 | 株式会社東芝 | 半導体装置 |
| WO2017179377A1 (ja) * | 2016-04-14 | 2017-10-19 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
| US11075264B2 (en) * | 2016-05-31 | 2021-07-27 | Cree, Inc. | Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods |
| DE112016007127T5 (de) * | 2016-08-08 | 2019-08-22 | Power Integrations, Inc. | Integrierter schaltkreis für schnelle temperatur-wahrnehmung einer halbleiterschaltvorrichtung |
| JP6950398B2 (ja) * | 2017-09-21 | 2021-10-13 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| JP2019196257A (ja) | 2018-05-10 | 2019-11-14 | キヤノンファインテックニスカ株式会社 | シート処理装置 |
| WO2022009549A1 (ja) * | 2020-07-10 | 2022-01-13 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
-
2020
- 2020-10-09 WO PCT/JP2020/038231 patent/WO2021085078A1/ja not_active Ceased
- 2020-10-09 CN CN202080074984.1A patent/CN114600250B/zh active Active
- 2020-10-09 DE DE112020005203.6T patent/DE112020005203T5/de active Pending
- 2020-10-09 US US17/771,828 patent/US12302621B2/en active Active
- 2020-10-09 JP JP2021554269A patent/JP7642947B2/ja active Active
-
2025
- 2025-01-22 JP JP2025009115A patent/JP7836051B2/ja active Active
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