JPWO2021028750A5 - - Google Patents
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- JPWO2021028750A5 JPWO2021028750A5 JP2021539687A JP2021539687A JPWO2021028750A5 JP WO2021028750 A5 JPWO2021028750 A5 JP WO2021028750A5 JP 2021539687 A JP2021539687 A JP 2021539687A JP 2021539687 A JP2021539687 A JP 2021539687A JP WO2021028750 A5 JPWO2021028750 A5 JP WO2021028750A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- insulating layer
- layer
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 24
- 238000000034 method Methods 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024181801A JP7794926B2 (ja) | 2019-08-09 | 2024-10-17 | 半導体装置 |
| JP2025265579A JP2026053469A (ja) | 2019-08-09 | 2025-12-18 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019147798 | 2019-08-09 | ||
| JP2019147798 | 2019-08-09 | ||
| PCT/IB2020/057052 WO2021028750A1 (ja) | 2019-08-09 | 2020-07-27 | 半導体装置、および半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024181801A Division JP7794926B2 (ja) | 2019-08-09 | 2024-10-17 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021028750A1 JPWO2021028750A1 (https=) | 2021-02-18 |
| JPWO2021028750A5 true JPWO2021028750A5 (https=) | 2023-07-21 |
| JP7575383B2 JP7575383B2 (ja) | 2024-10-29 |
Family
ID=74570234
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021539687A Active JP7575383B2 (ja) | 2019-08-09 | 2020-07-27 | 半導体装置、および半導体装置の作製方法 |
| JP2024181801A Active JP7794926B2 (ja) | 2019-08-09 | 2024-10-17 | 半導体装置 |
| JP2025265579A Pending JP2026053469A (ja) | 2019-08-09 | 2025-12-18 | 半導体装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024181801A Active JP7794926B2 (ja) | 2019-08-09 | 2024-10-17 | 半導体装置 |
| JP2025265579A Pending JP2026053469A (ja) | 2019-08-09 | 2025-12-18 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12568654B2 (https=) |
| JP (3) | JP7575383B2 (https=) |
| KR (1) | KR20220044557A (https=) |
| CN (1) | CN114207832A (https=) |
| TW (1) | TWI864059B (https=) |
| WO (1) | WO2021028750A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11423204B1 (en) | 2021-04-14 | 2022-08-23 | Taiwan Semiconductor Manufacturing Company Limited | System and method for back side signal routing |
| CN113809163B (zh) * | 2021-09-17 | 2023-11-24 | 武汉天马微电子有限公司 | 金属氧化物晶体管、显示面板及显示装置 |
| JP2025012144A (ja) * | 2023-07-12 | 2025-01-24 | 株式会社ジャパンディスプレイ | 半導体装置及び表示装置 |
| CN118263335B (zh) * | 2024-03-25 | 2025-02-11 | 中国科学技术大学 | 一种氧化镓二极管及其制备方法 |
| CN119630061A (zh) * | 2024-08-09 | 2025-03-14 | Tcl华星光电技术有限公司 | 显示面板及显示装置 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10104663A (ja) | 1996-09-27 | 1998-04-24 | Semiconductor Energy Lab Co Ltd | 電気光学装置およびその作製方法 |
| JPH11121757A (ja) | 1997-10-20 | 1999-04-30 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP3883706B2 (ja) | 1998-07-31 | 2007-02-21 | シャープ株式会社 | エッチング方法、及び薄膜トランジスタマトリックス基板の製造方法 |
| US6365917B1 (en) * | 1998-11-25 | 2002-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US6646287B1 (en) * | 1999-11-19 | 2003-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with tapered gate and insulating film |
| US6562671B2 (en) * | 2000-09-22 | 2003-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and manufacturing method thereof |
| JP4021194B2 (ja) | 2001-12-28 | 2007-12-12 | シャープ株式会社 | 薄膜トランジスタ装置の製造方法 |
| KR100883769B1 (ko) | 2002-11-08 | 2009-02-18 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판 제조방법 |
| US8514340B2 (en) | 2002-11-08 | 2013-08-20 | Lg Display Co., Ltd. | Method of fabricating array substrate having double-layered patterns |
| US7572718B2 (en) * | 2004-04-19 | 2009-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR101131793B1 (ko) * | 2005-05-31 | 2012-03-30 | 삼성전자주식회사 | 폴리 실리콘형 박막트랜지스터 및 이를 갖는 박막트랜지스터 기판 및 이의 제조 방법 |
| JP2007142082A (ja) * | 2005-11-17 | 2007-06-07 | Hitachi Displays Ltd | 表示装置およびその製造方法 |
| KR20070117269A (ko) | 2006-06-08 | 2007-12-12 | 삼성전자주식회사 | 표시 장치 및 그 제조 방법 |
| US20070296003A1 (en) | 2006-06-08 | 2007-12-27 | Samsung Electronics Co., Ltd. | Thin Film Transistor Substrate and Method for Manufacturing the Same |
| KR102450889B1 (ko) | 2009-12-04 | 2022-10-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2012090799A1 (en) * | 2010-12-28 | 2012-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP6104522B2 (ja) * | 2011-06-10 | 2017-03-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102071545B1 (ko) | 2012-05-31 | 2020-01-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9929279B2 (en) | 2014-02-05 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9443876B2 (en) | 2014-02-05 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module |
| JP6559444B2 (ja) * | 2014-03-14 | 2019-08-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US11189736B2 (en) * | 2015-07-24 | 2021-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR102448033B1 (ko) | 2015-12-21 | 2022-09-28 | 삼성디스플레이 주식회사 | 박막 트랜지스터의 제조 방법, 박막 트랜지스터 기판, 및 평판 표시 장치 |
| KR20180066848A (ko) | 2016-12-09 | 2018-06-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제작 방법 |
| CN108962757B (zh) * | 2018-07-12 | 2019-12-10 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制造方法、显示基板、显示装置 |
-
2020
- 2020-07-27 CN CN202080055599.2A patent/CN114207832A/zh active Pending
- 2020-07-27 KR KR1020227007411A patent/KR20220044557A/ko active Pending
- 2020-07-27 US US17/629,802 patent/US12568654B2/en active Active
- 2020-07-27 JP JP2021539687A patent/JP7575383B2/ja active Active
- 2020-07-27 WO PCT/IB2020/057052 patent/WO2021028750A1/ja not_active Ceased
- 2020-07-29 TW TW109125507A patent/TWI864059B/zh active
-
2024
- 2024-10-17 JP JP2024181801A patent/JP7794926B2/ja active Active
-
2025
- 2025-12-18 JP JP2025265579A patent/JP2026053469A/ja active Pending
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