TWI864059B - 半導體裝置及半導體裝置的製造方法 - Google Patents

半導體裝置及半導體裝置的製造方法 Download PDF

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TWI864059B
TWI864059B TW109125507A TW109125507A TWI864059B TW I864059 B TWI864059 B TW I864059B TW 109125507 A TW109125507 A TW 109125507A TW 109125507 A TW109125507 A TW 109125507A TW I864059 B TWI864059 B TW I864059B
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region
insulating layer
layer
film
transistor
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TW109125507A
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TW202121692A (zh
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後藤尚人
樹
中田昌孝
佐藤亜美
三澤千恵子
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日商半導體能源研究所股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6721—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions having lightly-doped extensions consisting of multiple lightly doped zones or having non-homogeneous dopant distributions, e.g. graded LDD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
TW109125507A 2019-08-09 2020-07-29 半導體裝置及半導體裝置的製造方法 TWI864059B (zh)

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JP2019-147798 2019-08-09
JP2019147798 2019-08-09

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TW202121692A TW202121692A (zh) 2021-06-01
TWI864059B true TWI864059B (zh) 2024-12-01

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US (1) US12568654B2 (https=)
JP (3) JP7575383B2 (https=)
KR (1) KR20220044557A (https=)
CN (1) CN114207832A (https=)
TW (1) TWI864059B (https=)
WO (1) WO2021028750A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11423204B1 (en) 2021-04-14 2022-08-23 Taiwan Semiconductor Manufacturing Company Limited System and method for back side signal routing
CN113809163B (zh) * 2021-09-17 2023-11-24 武汉天马微电子有限公司 金属氧化物晶体管、显示面板及显示装置
JP2025012144A (ja) * 2023-07-12 2025-01-24 株式会社ジャパンディスプレイ 半導体装置及び表示装置
CN118263335B (zh) * 2024-03-25 2025-02-11 中国科学技术大学 一种氧化镓二极管及其制备方法
CN119630061A (zh) * 2024-08-09 2025-03-14 Tcl华星光电技术有限公司 显示面板及显示装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10104663A (ja) * 1996-09-27 1998-04-24 Semiconductor Energy Lab Co Ltd 電気光学装置およびその作製方法
JPH11121757A (ja) * 1997-10-20 1999-04-30 Toshiba Corp 半導体装置およびその製造方法
US20030155594A1 (en) * 2000-09-22 2003-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method method thereof
US20060270124A1 (en) * 2005-05-31 2006-11-30 Samsung Electronics Co., Ltd. Thin film transistor and method of fabricating thin film transistor substrate
US20070108449A1 (en) * 2005-11-17 2007-05-17 Eiji Oue Display device and fabrication method thereof
US20150263141A1 (en) * 2014-03-14 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2015179822A (ja) * 2014-02-05 2015-10-08 株式会社半導体エネルギー研究所 半導体装置、該半導体装置を用いた表示装置、該表示装置を用いた表示モジュール、並びに該半導体装置、該表示装置、及び該表示モジュールを用いた電子機器
US20170179164A1 (en) * 2015-12-21 2017-06-22 Samsung Display Co., Ltd. Method of manufacturing thin-film transistor, thin-film transistor substrate, and flat panel display apparatus
TW201743453A (zh) * 2009-12-04 2017-12-16 半導體能源研究所股份有限公司 半導體裝置及其製造方法

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KR100883769B1 (ko) 2002-11-08 2009-02-18 엘지디스플레이 주식회사 액정표시장치용 어레이기판 제조방법
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JP6104522B2 (ja) * 2011-06-10 2017-03-29 株式会社半導体エネルギー研究所 半導体装置
KR102071545B1 (ko) 2012-05-31 2020-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10104663A (ja) * 1996-09-27 1998-04-24 Semiconductor Energy Lab Co Ltd 電気光学装置およびその作製方法
JPH11121757A (ja) * 1997-10-20 1999-04-30 Toshiba Corp 半導体装置およびその製造方法
US20030155594A1 (en) * 2000-09-22 2003-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method method thereof
US20060270124A1 (en) * 2005-05-31 2006-11-30 Samsung Electronics Co., Ltd. Thin film transistor and method of fabricating thin film transistor substrate
US20070108449A1 (en) * 2005-11-17 2007-05-17 Eiji Oue Display device and fabrication method thereof
TW201743453A (zh) * 2009-12-04 2017-12-16 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2015179822A (ja) * 2014-02-05 2015-10-08 株式会社半導体エネルギー研究所 半導体装置、該半導体装置を用いた表示装置、該表示装置を用いた表示モジュール、並びに該半導体装置、該表示装置、及び該表示モジュールを用いた電子機器
US20150263141A1 (en) * 2014-03-14 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20170179164A1 (en) * 2015-12-21 2017-06-22 Samsung Display Co., Ltd. Method of manufacturing thin-film transistor, thin-film transistor substrate, and flat panel display apparatus

Also Published As

Publication number Publication date
TW202121692A (zh) 2021-06-01
JP2025003498A (ja) 2025-01-09
KR20220044557A (ko) 2022-04-08
JP7794926B2 (ja) 2026-01-06
WO2021028750A1 (ja) 2021-02-18
JP7575383B2 (ja) 2024-10-29
JP2026053469A (ja) 2026-03-25
US12568654B2 (en) 2026-03-03
JPWO2021028750A1 (https=) 2021-02-18
CN114207832A (zh) 2022-03-18
US20220320340A1 (en) 2022-10-06

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